HAT2192WP [RENESAS]
Silicon N Channel Power MOS FET Power Switching; 硅N通道功率MOS FET电源开关型号: | HAT2192WP |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Silicon N Channel Power MOS FET Power Switching |
文件: | 总4页 (文件大小:44K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HAT2192WP
Silicon N Channel Power MOS FET
Power Switching
REJ03G0533-0100
Rev.1.00
Feb.23.2005
Features
•
•
•
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5
6
7 8
D D D D
8
4
7
6
5
1, 2, 3
4
5, 6, 7, 8 Drain
Source
Gate
4
G
1
2
3
S
1
S S
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Symbol
Ratings
250
±30
10
Unit
VDSS
VGSS
ID
V
V
Drain current
A
Note1
Drain peak current
ID (pulse)
IDR
20
A
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
10
A
Note1
IDR (pulse)
20
A
Note3
IAP
5
A
Note3
Avalanche energy
EAR
1.5
25
mJ
W
°C/W
°C
°C
Channel dissipation
Pch Note2
θch-c
Tch
Channel to case thermal impedance
Channel temperature
5
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.1.00, Feb.23.2005, page 1 of 3
HAT2192WP
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
250
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
ID = 10 mA, VGS = 0
—
1
µA
µA
V
VDS = 250 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 5 A, VDS = 10 V Note4
ID = 5 A, VGS = 10 VNote4
IGSS
—
—
±0.1
4.5
—
VGS(off)
|yfs|
3.0
5
—
8
S
Static Drain to Source on state
resistance
RDS(on)
—
0.2
0.23
Ω
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
710
110
8
—
—
—
—
—
—
—
—
—
—
1.4
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
f = 1 MHz
Reverse transfer capacitance
Turn-on delay time
26
18
54
8
ID = 5 A
VGS = 10 V
Rise time
RL = 25 Ω
Rg = 10 Ω
Turn-off delay time
td(off)
tf
Fall time
Total Gate charge
Qg
15
4
VDD = 200 V
VGS = 10 V
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Qgs
Qgd
VDF
trr
ID = 10 A
IF = 10 A, VGS = 0 Note4
6
0.85
110
ns
IF = 10 A, VGS = 0
diF/dt = 100 A/µs
Notes: 4. Pulse test
Rev.1.00, Feb.23.2005, page 2 of 3
HAT2192WP
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
WPAK
MASS[Typ.]
0.085g
Unit: mm
PWSN0008DA-A
4.21Typ
1.27Typ
0.8Max
5.1 ± 0.2
3.9 ± 0.2
0.04Min
1.27Typ
4.9 ± 0.1
0.2Typ
0.635Max
0.4 ± 0.06
(Ni/Pd/Au plating)
Ordering Information
Part Name
Quantity
Shipping Container
HAT2192WP-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00, Feb.23.2005, page 3 of 3
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0
相关型号:
©2020 ICPDF网 联系我们和版权申明