HAT2193WP-EL-E [RENESAS]
Silicon N Channel Power MOS FET Power Switching; 硅N通道功率MOS FET电源开关
| 型号： | HAT2193WP-EL-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel Power MOS FET Power Switching |
| 文件： | 总4页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HAT2193WP
Silicon N Channel Power MOS FET
Power Switching
REJ03G1252-0100
Rev.1.00
Aug.24,2005
Features
•
•
•
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5
6
7 8
D D D D
8
4
7
6
5
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
G
1
2
3
S
1
S S
3
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
Ratings
250
±30
7
Unit
VDSS
VGSS
ID
V
V
Gate to source voltage
Drain current
A
Note1
Drain peak current
ID (pulse)
IDR
14
A
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
7
A
Note1
IDR (pulse)
14
A
Note3
IAP
3.5
0.7
20
A
Note3
Avalanche energy
EAR
mJ
W
°C/W
°C
°C
Channel dissipation
Pch Note2
θch-c
Tch
Channel to case thermal impedance
Channel temperature
6.25
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.1.00, Aug.24.2005, page 1 of 3
HAT2193WP
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
250
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
ID = 10 mA, VGS = 0
—
1
µA
µA
V
VDS = 250 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 3.5 A, VDS = 10 V Note4
ID = 3.5 A, VGS = 10 V Note4
IGSS
—
—
±0.1
4.5
—
VGS(off)
|yfs|
3.0
3
—
5
S
Static drain to source on state
resistance
RDS(on)
—
0.35
0.40
Ω
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
430
70
5
—
—
—
—
—
—
—
—
—
—
1.4
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
Reverse transfer capacitance
Turn-on delay time
f = 1 MHz
24
17
46
8
ID = 3.5 A
VGS = 10 V
Rise time
RL = 35.7 Ω
Rg = 10 Ω
Turn-off delay time
td(off)
tf
Fall time
Total gate charge
Qg
10
2.5
4
VDD = 200 V
VGS = 10 V
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Qgs
Qgd
VDF
trr
ID = 7 A
IF = 7 A, VGS = 0 Note4
0.9
110
ns
IF = 7 A, VGS = 0
diF/dt = 100 A/µs
Notes: 4. Pulse test
Rev.1.00, Aug.24.2005, page 2 of 3
HAT2193WP
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
WPAK
MASS[Typ.]
0.085g
Unit: mm
PWSN0008DA-A
4.21Typ
1.27Typ
0.8Max
5.1 0.2
3.9 0.2
0.04Min
1.27Typ
0.2Typ
0.635Max
0.4 0.06
4.9 0.1
(Ni/Pd/Au plating)
Ordering Information
Part Name
Quantity
Shipping Container
HAT2193WP-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00, Aug.24.2005, page 3 of 3
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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