HAT2196C [RENESAS]
Silicon N Channel MOS FET Power Switching; 硅N沟道MOS FET电源开关
| 型号： | HAT2196C |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET Power Switching |
| 文件： | 总7页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HAT2196C
Silicon N Channel MOS FET
Power Switching
REJ03G1235-0500
Rev.5.00
Jun. 13, 2005
Features
•
Low on-resistance
RDS(on) = 45 mΩ typ. (at VGS = 4.5 V)
Low drive current.
High density mounting
2.5 V gate drive devices.
•
•
•
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
2 3 4 5
D D D D
Indexband
4
1. Source
5
6
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
6
G
3
2
1
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
Ratings
20
Unit
V
VGSS
±12
2.5
V
ID
A
Drain peak current
ID (pulse)Note1
10
A
Body - Drain diode reverse drain current
Channel dissipation
IDR
2.5
A
PchNote 2
Tch
850
150
mW
°C
°C
Channel temperature
Storage temperature
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)
Rev.5.00, Jun. 13, 2005, page 1 of 6
HAT2196C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
V(BR)GSS
IGSS
Min
20
±12
—
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state resistance
—
—
V
IG = ±10 µA, VDS = 0
—
±10
1
µA
µA
V
VGS = ±10 V, VDS = 0
IDSS
—
—
VDS = 20 V, VGS = 0
VGS(off)
RDS(on)
0.4
—
—
1.4
58
93
—
ID = 1 mA, VDS = 10 V
ID = 1.3 A, VGS = 4.5 V Note3
ID = 1.3 A, VGS = 2.5 V Note3
ID = 1.3 A, VGS = 10 V Note3
45
66
7
mΩ
mΩ
S
—
Forward transfer admittance
Input capacitance
| yfs |
Ciss
Coss
Crss
Qg
4.5
—
270
85
35
2.8
0.6
0.5
8
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
VGS = 0, f = 1 MHz,
VDS = 10 V
Output capacitance
Reverse transfer capacitance
Total gate charge
—
—
—
—
—
—
VGS = 4.5 V, VDS = 10 V,
ID = 2.5 A
Gate to Source charge
Gate to Drain charge
Turn - on delay time
Rise time
Qgs
Qgd
td(on)
tr
—
—
—
—
—
—
VGS = 4.5 V, ID = 1.3 A,
VDD = 10 V,
—
19
20
5
—
RL = 7.7 Ω , Rg = 4.7 Ω
Turn - off delay time
Fall time
td(off)
tf
—
—
—
—
Body - Drain diode forward voltage
Notes: 3. Pulse test
VDF
—
0.8
1.1
IF = 2.5 A, VGS = 0 Note3
Rev.5.00, Jun. 13, 2005, page 2 of 6
HAT2196C
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1.6
1.2
0.8
0.4
100
10
1
When using the FR4 board.
1 shot pulse, Ta = 25°C
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
10 µs
100 µs
1 ms
PW =
10 ms
DC operation
0.1
0.01
Operation in this
area is limited by
R
DS(on)
0.001
0
50
100
150
200
0.001 0.01
0.1
10
100
1
Drain Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Typical Output Characteristics
10 V
2.0 V
Typical Transfer Characteristics
10
8
10
8
25°C
Pulse Test
–25°C
4.5 V
2.5 V
Tc = 75°C
1.8 V
1.6 V
1.4 V
6
6
4
4
2
2
V
= 10 V
DS
Pulse Test
VGS = 1.2 V
0
0
2
4
6
8
10
1
2
3
4 5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1000
160
Pulse Test
Pulse Test
120
ID = 2.5 A
80
40
100
2.5 V
1.3 A
0.5 A
VGS = 4.5 V
10
0.1
6
0
2
4
8
10
1
10
100
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Rev.5.00, Jun. 13, 2005, page 3 of 6
HAT2196C
Static Drain to Source on State Resistance
Forward Transfer Admittance vs.
Drain Current
vs. Temperature
100
ID = 2.5 A
100
10
1
80
60
40
0.5 A
Tc = –25°C
VGS = 2.5 V
1.3 A
75°C
25°C
ID = 0.5, 1.3, 2.5 A
VGS = 4.5 V
20
0
VDS = 10 V
Pulse Test
Pulse Test
25 50 75 100 125 150
0.1
0.01 0.03 0.1 0.3
1
3
10
−25
0
Drain Current ID (A)
Case Temperature Tc (°C)
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
1000
40
30
20
10
8
6
4
2
Ciss
300
100
VDD = 20 V
10 V
5 V
Coss
30
10
Crss
3
1
VDD = 20 V
10 V
5 V
VGS = 0
f = 1 MHz
0
0
10
Drain to Source Voltage VDS (V)
20
0.8
1.6
2.4
Gate Charge Qg (nC)
3.2
4.0
0
Reverse Drain Current vs.
Source to Drain Voltage
Switching Characteristics
100
10
1
10
8
t
VGS = –10 V, VDS = 10 V
RG = 4.7 Ω, Ta = 25°C
r
5 V
t
d(off)
6
VGS = 0, –5 V
t
d(on)
4
t
f
2
Pulse Test
0
0.1
0.3
1
3
10
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Drain Current ID (A)
Rev.5.00, Jun. 13, 2005, page 4 of 6
HAT2196C
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
R
L
10%
10%
Vin
4.7
Vin
V
DD
= 10 V
Vout
10%
4.5 V
90%
90%
td(off)
td(on)
t
f
tr
Rev.5.00, Jun. 13, 2005, page 5 of 6
HAT2196C
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
0.0065g
PWSF0006JA-A
CMFPAK-6 / CMFPAK-6V
D
A
e
c
LP
E
HE
A
A
L
b
x
S
A
M
Reference
Symbol
Dimension in Millimeters
Min
0.6
0
Nom
Max
0.8
e
A
A
A
0.01
0.79
0.3
1
2
A
2
1
A
0.7
0.15
b
0.22
0.2
b
1
A
c
0.1
0.13
0.11
2.0
0.15
y
S
c
S
1
e1
D
E
e
1.9
1.6
2.1
1.8
1.7
b
0.65
2.1
H
2.05
0.1
2.15
0.3
l1
E
b
1
L
0.2
c1
L
0.15
0.45
0.05
0.05
0.35
P
x
y
b2
c
b
2
1
e
1.65
Pattern of terminal position areas
A-A Section
l
0.5
1
Ordering Information
Part Name
Quantity
Shipping Container
HAT2196C-EL-E
3000 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00, Jun. 13, 2005, page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0
相关型号：
©2020 ICPDF网 联系我们和版权申明