2SK3156-E [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK3156-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总8页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3156
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1081-0301
(Previous: ADE-208-683A)
Rev.3.01
Apr 27, 2006
Features
•
Low on-resistance
RDS =50 mΩ typ.
•
•
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
G
2. Drain
(Flange)
3. Source
1
2
3
S
Rev.3.01 Apr 27, 2006 page 1 of 7
2SK3156
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
150
V
V
±20
20
A
Note1
Drain peak current
ID(pulse)
80
A
Body-drain diode reverse drain current
Avalanche current
IDR
20
A
Note3
IAP
20
30
A
Note3
Avalanche energy
EAR
Pch Note2
mJ
W
°C
°C
Channel dissipation
75
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
150
±20
—
—
—
V
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 VNote4
ID = 10 A, VGS = 4 V Note4
ID = 10 A, VDS = 10 V Note4
—
±10
10
2.5
70
80
—
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
1.0
—
—
Static drain to source on state
resistance
50
mΩ
mΩ
S
—
60
Forward transfer admittance
Input capacitance
13
—
22
Ciss
Coss
Crss
td(on)
tr
1750
600
300
18
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
—
—
—
ID = 10 A, VGS = 10 V,
RL = 3 Ω
—
125
400
190
0.9
170
—
Turn-off delay time
Fall time
td(off)
tf
—
—
—
—
Body–drain diode forward voltage
VDF
—
—
IF = 20 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
—
ns
IF = 20 A, VGS = 0
diF/ dt = 50 A/µs
Note: 4. Pulse test
Rev.3.01 Apr 27, 2006 page 2 of 7
2SK3156
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
80
60
40
20
200
100
50
20
10
5
2
1
Operation in
this area is
0.5
limited by R
DS(on)
0.2
0.1
Ta = 25°C
0.05
1000
100 300
0
10 30
0.1
1
3
50
100
150
200
0.3
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
10 V
20
20
16
12
8
Pulse Test
3 V
5 V
4 V
VDS = 10 V
Pulse Test
16
12
8
75°C
25°C
VGS = 2.5 V
Tc = –25°C
4
4
2 V
8
0
0
1
2
3
4
5
2
4
6
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
1000
500
2.0
1.6
1.2
0.8
0.4
Pulse Test
Pulse Test
200
100
50
ID = 20 A
VGS = 4 V
10 V
10 A
5 A
20
10
100
10
20
50
12
5
0
2
4
8
16
20
1
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.01 Apr 27, 2006 page 3 of 7
2SK3156
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
100
250
200
150
100
50
Pulse Test
Tc = –25°C
30
10
75°C
25°C
5, 10 A
ID = 20 A
3
1
VGS = 4 V
5, 10 A
20 A
0.3
0.1
VDS = 10 V
Pulse Test
10 V
0
10
50 100
5
20
2
0.1
0.5
1
0.2
–40
0
40
80
120
160
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
1000
500
10000
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
3000
1000
Ciss
200
100
50
300
100
Coss
Crss
30
10
20
10
VGS = 0
f = 1 MHz
0.1 0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
ID = 20 A
Switching Characteristics
5000
200
160
120
80
20
VGS = 10 V, VDD = 30 V
2000
1000
500
PW = 5 µs, duty < 1 %
VGS
16
12
8
VDD = 100 V
50 V
25 V
t
d(off)
t
f
200
100
VDS
t
r
50
VDD = 100 V
50 V
25 V
40
4
0
t
d(on)
20
10
0
5
10 20
1
50
2
0.5
40
80
120
160
200
0.2
0.1
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.3.01 Apr 27, 2006 page 4 of 7
2SK3156
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
16
12
8
50
40
30
20
Pulse Test
IAP = 20 A
VDD = 50 V
duty < 0.1 %
Rg > 50 Ω
VGS = 10 V
5 V
0, –5 V
4
10
0
0
0.2
0.4
0.6
0.8
1.0
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 1.67°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
• L • IAP •
VDSS – VDD
L
1
2
2
EAR
=
VDS
Monitor
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
50 Ω
15 V
VDD
0
Rev.3.01 Apr 27, 2006 page 5 of 7
2SK3156
Switching Time Test Circuit
Vin Monitor
Switching Time Waveforms
Vout
Monitor
90%
D.U.T.
RL
10%
10%
Vin
VDD
= 30 V
Vin
10 V
Vout
10%
50 Ω
90%
90%
d(off)
t
t
t
r
d(on)
t
f
Rev.3.01 Apr 27, 2006 page 6 of 7
2SK3156
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name
MASS[Typ.]
1.8g
Unit: mm
TO-220AB / TO-220ABV
11.5 Max
10.16 0.2
4.44 0.2
9.5
8.0
+0.1
–0.08
1.26 0.15
φ 3.6
2.7 Max
1.5 Max
0.76 0.1
2.54 0.5
0.5 0.1
2.54 0.5
Ordering Information
Part Name
Quantity
Shipping Container
2SK3156-E
500 pcs
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.01 Apr 27, 2006 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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