2SK3158-E [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK3158-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3158
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1083-0400
(Previous: ADE-208-757B)
Target Specification
Rev.4.00
Sep 07, 2005
Features
•
Low on-resistance
RDS = 40 mΩ typ.
•
•
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
G
2. Drain
(Flange)
3. Source
1
2
3
S
Rev.4.00 Sep 07, 2005 page 1 of 3
2SK3158
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
150
V
V
±20
30
A
Note1
Drain peak current
ID(pulse)
120
A
Body-drain diode reverse drain current
Avalanche current
IDR
30
30
A
Note 3
IAP
A
Note 3
Avalanche energy
EAR
Pch Note 2
67
mJ
W
°C
°C
Channel dissipation
100
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
—
Max
—
Unit
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
150
±20
—
V
V
ID = 10 mA, VGS = 0
—
—
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1 mA, VDS = 10V
ID = 15 A, VGS = 10V Note 4
ID = 15 A, VGS = 4V Note 4
ID = 15 A, VDS = 10V Note 4
—
±10
10
2.5
45
63
—
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
1.0
—
—
Static drain to source on state
resistance
40
mΩ
mΩ
S
—
45
Forward transfer admittance
Input capacitance
18
—
30
Ciss
Coss
Crss
td(on)
tr
2600
820
350
25
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
—
—
—
ID = 15 A, VGS = 10 V,
RL = 2 Ω
—
180
600
280
0.91
110
—
Turn-off delay time
Fall time
td(off)
tf
—
—
—
—
Body–drain diode forward voltage
VDF
—
—
IF = 30 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
—
ns
IF = 30 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
Rev.4.00 Sep 07, 2005 page 2 of 3
2SK3158
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name
MASS[Typ.]
1.8g
Unit: mm
TO-220AB / TO-220ABV
11.5 Max
10.16 0.2
4.44 0.2
9.5
8.0
+0.1
–0.08
1.26 0.15
φ 3.6
2.7 Max
1.5 Max
0.76 0.1
2.54 0.5
0.5 0.1
2.54 0.5
Ordering Information
Part Name
Quantity
Shipping Container
2SK3158-E
500 pcs
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 3 of 3
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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