2SK3159 [HITACHI]

Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关


型号：	2SK3159
厂家：	HITACHI SEMICONDUCTOR
描述：	Silicon N Channel MOS FET High Speed Power Switching 硅N沟道MOS FET高速电源开关开关电源开关
文件：	总4页 (文件大小：30K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2SK3159

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-774 (Z)

Target Specification

1st. Edition

February 1999

Features

•

Low on-resistance

R_DS= 23 mΩ typ.

•

High speed switching

4 V gate drive device can be driven from 5 V source

Outline

TO–3P

1. Gate

2. Drain

(Flange)

3. Source

2SK3159

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_DSS

Ratings

150

Unit

Drain to source voltage

Gate to source voltage

Drain current

V_GSS

I_D

±20

Note1

Drain peak current

I_D(pulse)

200

Body-drain diode reverse drain current I_DR

Note3

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

I_AP

E_AR

187

°C

Pch ^Note2

125

Tch

150

Tstg

–55 to +150

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

—

Max

—

Unit

Test Conditions

I_D= 10 mA, V_GS= 0

I_G= ±100 µA, V_DS= 0

V_GS= ±16 V, V_DS= 0

V_DS= 150 V, V_GS= 0

I_D= 1 mA, V_DS= 10 V

I_D= 25 A, V_GS= 10 V^Note4

I_D= 25 A, V_GS= 4 V^Note4

I_D= 25 A, V_DS= 10 V ^Note4

V_DS= 10 V

Drain to source breakdown voltage V_(BR)DSS150

Gate to source breakdown voltage V_(BR)GSS±20

—

Gate to source leak current

Zero gate voltege drain current

Gate to source cutoff voltage

Static drain to source on state

resistance

I_GSS

—

1.0

—

±10

2.5

—

µA

I_DSS

—

V_GS(off)

R_DS(on)

|y_fs|

—

mΩ

Forward transfer admittance

Input capacitance

Ciss

Coss

Crss

t_d(on)

t_r

4000

1650

590

—

Output capacitance

Reverse transfer capacitance

Turn-on delay time

—

V_GS= 0

—

f = 1 MHz

—

I_D= 25 A, V_GS= 10 V

R_L= 1.2 Ω

Rise time

280

830

450

0.95

200

—

Turn-off delay time

t_d(off)

t_f

—

Fall time

—

Body–drain diode forward voltage V_DF

—

I_F= 50 A, V_GS= 0

Body–drain diode reverse

recovery time

t_rr

—

I_F= 50 A, V_GS= 0

diF/ dt = 50 A/ µs

Note: 4. Pulse test

2SK3159

Package Dimensions

Unit: mm

3.2 ± 0.2

5.0 max

1.5 typ

16.0 max

1.6 typ

2.8 typ

1.4 max

2.0 typ

0.6 ± 0.2

1.0 ± 0.2

0.9 typ

3.6 typ

1.0 typ

TO–3P

SC–65

—

Hitachi Code

EIAJ

5.45 ± 0.2

JEDEC

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Electronic components Group

Dornacher Stra§e 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

2SK3159 [HITACHI]

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