2SK3159 [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK3159 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总8页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3159
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1084-0400
Rev.4.00
May 15, 2006
Features
•
Low on-resistance
RDS = 23 mΩ typ.
•
•
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
2. Drain
(Flange)
3. Source
G
1
2
3
S
Rev.4.00 May 15, 2006 page 1 of 7
2SK3159
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
150
Unit
V
V
±20
50
A
Note1
Drain peak current
ID(pulse)
200
A
Body-drain diode reverse drain current
Avalanche current
IDR
50
A
Note3
IAP
50
A
Note3
Avalanche energy
EAR
Pch Note2
187
mJ
W
°C
°C
Channel dissipation
125
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
150
±20
—
—
—
V
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A, VGS = 10 VNote4
ID = 25 A, VGS = 4 V Note4
ID = 25 A, VDS = 10 V Note4
—
±10
10
2.5
30
42
—
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
1.0
—
—
Static drain to source on state
resistance
23
mΩ
mΩ
S
—
28
Forward transfer admittance
Input capacitance
27
—
45
Ciss
Coss
Crss
td(on)
tr
4000
1650
590
30
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
—
—
—
ID = 25 A, VGS = 10 V,
RL = 1.2 Ω
—
280
830
450
0.95
200
—
Turn-off delay time
Fall time
td(off)
tf
—
—
—
—
Body–drain diode forward voltage
VDF
—
—
IF = 50 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
—
ns
IF = 50 A, VGS = 0
diF/ dt = 50 A/µs
Note: 4. Pulse test
Rev.4.00 May 15, 2006 page 2 of 7
2SK3159
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
160
120
80
200
100
50
DC Operation
(Tc = 25°C)
20
10
5
2
1
Operation in
this area is
limited by RDS (on)
40
0.5
0.2
0.1
Ta = 25°C
0
0
0.05
50
100
150
200
0.1 0.3
1
3
10 30 100 300 1000
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
40
30
20
10
0
100
80
60
40
20
0
10 V
4 V
Pulse Test
VDS = 10 V
Pulse Test
3 V
3.5 V
2.5 V
Tc = 75°C
25°C
VGS = 2 V
8
–25°C
0
2
4
6
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
100
2.0
Pulse Test
50
1.6
1.2
0.8
0.4
0
VGS = 4 V
ID = 50 A
20
10 V
10
5
20 A
10 A
2
Pulse Test
50 100 200
Drain Current ID (A)
1
0
4
8
12
16
20
1
2
5
10 20
Gate to Source Voltage VGS (V)
Rev.4.00 May 15, 2006 page 3 of 7
2SK3159
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
500
100
Pulse Test
200
100
50
80
10, 20 A
Tc = –25°C
25°C
ID = 50 A
60
20
10
5
VGS = 4 V
40
10, 20 A
50 A
75°C
20
2
1
10 V
VDS = 10 V
Pulse Test
0
–50
0.5
0.1
0
50
100
150
200
0.3
1
3
10
30
100
Case Temperature Tc (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
30000
10000
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
500
200
Ciss
3000
1000
100
50
Coss
300
100
20
10
Crss
VGS = 0
f = 1 MHz
0
10
20
30
40
50
0.1 0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
ID = 50 A
Switching Characteristics
20
5000
200
160
120
80
2000
1000
16
12
8
t
d(off)
VDD = 100 V
50 V
t
f
500
25 V
VGS
200
100
50
VDS
t
r
t
d(on)
4
40
VDD = 100 V
50 V
25 V
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty ≤ 1 %
20
10
0
400
0
0
80
160
240
320
0.1 0.2 0.5
1
2
5
10 20
50
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.4.00 May 15, 2006 page 4 of 7
2SK3159
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
40
30
20
10
0
250
200
150
100
50
IAP = 50 A
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
10 V
VGS = 0, –5 V
5 V
Pulse Test
1.6 2.0
0
25
0
0.4
0.8
1.2
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 1.0°C/W, Tc = 25°C
PW
T
D =
PDM
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
L
1
2
2
VDS
Monitor
EAR
=
• L • IAP •
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDD
D.U.T
VDS
ID
Vin
50 Ω
15 V
VDD
0
Rev.4.00 May 15, 2006 page 5 of 7
2SK3159
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
10%
10%
D.U.T.
Vin
RL
Vout
10%
VDD
= 30 V
Vin
10 V
50 Ω
90%
90%
t
t
r
t
d(off)
t
f
d(on)
Rev.4.00 May 15, 2006 page 6 of 7
2SK3159
Package Dimensions
Package Name
TO-3P
JEITA Package Code
SC-65
RENESAS Code
PRSSꢀꢀꢀ4ZE-A
Previous Code
MASS[Typ.]
5.ꢀg
TO-3P / TO-3PV
Unit: mm
4.8 ꢀ.2
15.6 ꢀ.3
φ
3.2 ꢀ.2
1.5
1.6
2.ꢀ
1.4 Max
2.8
1.ꢀ ꢀ.2
ꢀ.6 ꢀ.2
ꢀ.9
1.ꢀ
3.6
5.45 ꢀ.5
5.45 ꢀ.5
Ordering Information
Part Name
Quantity
Shipping Container
2SK3159-E
360 pcs
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 May 15, 2006 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .6.0
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