2SK3158 [HITACHI]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK3158 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总4页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3158
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-757A(Z)
Target Specification
2nd. Edition
December 1998
Features
•
Low on-resistance
RDS =35mΩ typ.
•
•
High speed switching
4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1. Gate
2. Drain(Flange)
3. Source
1
2
3
S
2SK3158
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
150
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
±20
V
30
A
Note1
Drain peak current
ID(pulse)
120
A
Body-drain diode reverse drain current IDR
30
A
Note3
Note3
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
IAP
30
A
EAR
67
mJ
W
°C
°C
Pch Note2
100
Tch
150
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VGS = ±16V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10VNote4
ID = 15A, VGS = 4VNote4
ID = 15A, VDS = 10VNote4
VDS = 10V
Drain to source breakdown voltage V(BR)DSS 150
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
IGSS
—
—
1.0
—
—
18
—
—
—
—
—
—
—
—
—
—
±10
10
2.5
45
75
—
µA
µA
V
IDSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
35
mΩ
mΩ
S
42
Forward transfer admittance
Input capacitance
30
Ciss
Coss
Crss
td(on)
tr
2600
820
350
25
—
pF
pF
pF
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
—
VGS = 0
—
f = 1MHz
—
ID = 15A, VGS = 10V
RL = 2Ω
Rise time
180
600
280
0.95
110
—
Turn-off delay time
td(off)
tf
—
Fall time
—
Body–drain diode forward voltage VDF
—
IF = 30A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
ns
IF = 30A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
2
2SK3158
Package Dimensions
Unit: mm
10.16±0.2
9.5
+ 0.1
– 0.08
4.44±0.2
f 3.6
8.0
1.26±0.15
1.2±0.1
1.27±0.1
1.5 max
0.5±0.1
2.7 max
0.76 ±0.1
2.54 ±0.5
2.54 ±0.5
TO–220AB
SC–46
—
Hitachi Code
EIAJ
JEDEC
3
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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