BDW93A [POINN]
NPN SILICON POWER DARLINGTONS; NPN硅功率DARLINGTONS
| 型号： | BDW93A |
| 厂家： | 
POWER INNOVATIONS LTD |
| 描述： | NPN SILICON POWER DARLINGTONS |
| 文件： | 总6页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
SEPTEMBER 1993 - REVISED MARCH 1997
●
Designed for Complementary Use with
BDW94, BDW94A, BDW94B and BDW94C
TO-220 PACKAGE
(TOP VIEW)
●
●
●
80 W at 25°C Case Temperature
12 A Continuous Collector Current
1
2
3
B
C
E
Minimum h of 750 at 3 V, 5 A
FE
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BDW93
45
BDW93A
BDW93B
BDW93C
BDW93
60
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
VCBO
V
80
100
45
BDW93A
BDW93B
BDW93C
60
VCEO
V
80
100
Emitter-base voltage
VEBO
IC
5
V
A
Continuous collector current
Continuous base current
12
0.3
IB
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Ptot
Ptot
Tj
80
W
W
°C
°C
°C
2
-65 to +150
-65 to +150
-65 to +150
Storage temperature range
Tstg
TA
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BDW93
45
60
Collector-emitter
BDW93A
BDW93B
BDW93C
BDW93
V(BR)CEO
IC = 100 mA
IB = 0
(see Note 3)
V
breakdown voltage
80
100
VCB
VCB
VCB
VCB
VCB
VCB
VCB
=
=
=
=
=
=
=
40 V
60 V
80 V
80 V
45 V
60 V
80 V
I
B = 0
1
1
Collector-emitter
cut-off current
IB = 0
IB = 0
IB = 0
BDW93A
BDW93B
BDW93C
BDW93
ICEO
mA
1
1
IE = 0
0.1
0.1
0.1
0.1
5
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
BDW93A
BDW93B
BDW93C
BDW93
Collector cut-off
current
VCB = 100 V
ICBO
mA
mA
VCB
VCB
VCB
=
=
=
45 V
60 V
80 V
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW93A
BDW93B
BDW93C
5
5
VCB = 100 V
5
Emitter cut-off
current
IEBO
VEB
=
5 V
IC = 0
2
VCE
VCE
VCE
=
=
=
3 V
3 V
IC
=
3 A
1000
100
Forward current
transfer ratio
hFE
IC = 10 A
(see Notes 3 and 4)
3 V
IC
IC
=
=
5 A
5 A
750
20000
Collector-emitter
saturation voltage
Base-emitter
IB
=
20 mA
2
3
VCE(sat)
VBE(sat)
VEC
(see Notes 3 and 4)
(see Notes 3 and 4)
V
V
V
IB = 100 mA
IB 20 mA
IB = 100 mA
IC = 10 A
IC 5 A
IC = 10 A
B = 0
IB = 0
=
=
2.5
4
saturation voltage
Parallel diode
IE
IE
=
=
5 A
I
2
forward voltage
10 A
4
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
RqJC
RqJA
1.56
62.5
°C/W
°C/W
P R O D U C T
I N F O R M A T I O N
2
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
TCS130AG
TCS130AE
50000
10000
3·0
tp = 300 µs, duty cycle < 2%
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
2·5
2·0
1·5
1·0
1000
TC = -40°C
TC = 25°C
TC = 100°C
0·5
VCE
=
3 V
tp = 300 µs, duty cycle < 2%
100
0·5
0
0·5
1·0
10
20
1·0
10
20
IC - Collector Current - A
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AI
3·0
2·5
2·0
1·5
1·0
0·5
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
1·0
10
20
IC - Collector Current - A
Figure 3.
P R O D U C T
I N F O R M A T I O N
3
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AA
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 4.
P R O D U C T
I N F O R M A T I O N
4
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
1,32
1,23
3,96
3,71
ø
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1
2
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
P R O D U C T
I N F O R M A T I O N
5
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
6
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