BDW93B [MCC]
NPN Silicon Power Transistors; NPN硅功率晶体管
| 型号： | BDW93B |
| 厂家： | 
Micro Commercial Components |
| 描述： | NPN Silicon Power Transistors |
| 文件： | 总2页 (文件大小：414K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TM
BDW93B
Micro Commercial Components
Features
·
Intended for use in power linear and switching applications
NPN Silicon
Power Transistors
·
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
·
·
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
ICP
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Peak Collector Current
Collector Current
Rating
80
80
5.0
15
Unit
V
V
V
A
TO-220
C
B
S
F
Q
IC
12
80
A
T
PC
TJ
TSTG
Collector power dissipation
Junction Temperature
Storage Temperature
W
OC
OC
-55 to +150
-55 to +150
A
U
1
2
3
Electrical Characteristics @ 25OC Unless Otherwise Specified
H
Symbol
Parameter
Min
Max
Units
K
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
80
---
---
---
0.1
2.0
Vdc
mAdc
mAdc
(I =100mAdc, IB=0)
C
ICBO
Collector-Base Cutoff Current
(VCB=80Vdc,IE=0)
Emitter-Base Cutoff Current
V
L
J
D
R
IEBO
G
(VEB=5.0Vdc, I =0)
C
N
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
ON CHARACTERISTICS
hFE-1
Forward Current Transfer ratio
1000
750
100
---
---
20000
---
---
---
(I =3.0Adc, VCE=3.0Vdc)
DIMENSIONS
C
INCHES
MM
hFE-2
Forward Current Transfer ratio
MIN
14.22
9.65
MAX
15.88
10.67
NOTE
DIM
A
MIN
MAX
.625
(I =5.0Adc, VCE=3.0Vdc)
C
.560
.380
.140
B
C
.420
.190
hFE-3
Forward Current Transfer ratio
---
3.56
4.82
(I =10Adc, VCE=3.0Vdc)
C
D
F
.020
.139
.190
---
.045
.161
.110
.250
.025
0.51
3.53
2.29
---
1.14
4.09
2.79
6.35
0.64
VCE(sat)-1
VCE(sat)-2
VBE(sat)-1
VBE(sat)-2
Collector-Emitter Saturation Voltage
(I =5.0Adc, I =20mAdc)
2.0
Vdc
Vdc
Vdc
Vdc
C
B
G
H
J
Collector-Emitter Saturation Voltage
---
3.0
.012
0.30
(I =10Adc, IB=100mAdc)
C
K
L
.500
.045
.580
.060
12.70
1.14
14.73
1.52
Base-Emitter Saturation Voltage
---
2.5
(I =5.0Adc,IB=20Adc)
C
N
.190
.210
4.83
5.33
Q
R
S
T
U
V
.100
.080
.045
.230
-----
.135
.115
.055
.270
.050
-----
2.54
2.04
1.14
5.84
-----
3.43
2.92
1.39
6.86
1.27
-----
Base-Emitter Saturation Voltage
(I =10Adc,IB=100Adc)
C
---
4.0
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
.045
1.15
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Revision: A
2011/01/01
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TM
Micro Commercial Components
Ordering Information :
Device
Packing
Part Number-BP
Bulk;1Kpcs/Box
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Revision: A
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