BDW93C [STMICROELECTRONICS]
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS; 互补硅功率达林顿晶体管
| 型号： | BDW93C |
| 厂家： | 
ST |
| 描述： | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 文件： | 总6页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDW93C
BDW94B/BDW94C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
■
■
COMPLEMENTARY PNP - NPN DEVICES
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■
LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
3
2
1
DESCRIPTION
The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
TO-220
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ
R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
PNP
BDW93C
BDW94C
100
BDW94B
VCBO
VCEO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Collector Current
80
80
V
V
100
12
15
A
ICM
IB
Collector Peak Current
A
Base Current
0.2
A
o
Ptot
Tstg
Tj
80
W
oC
oC
Total Dissipation at Tc 25 C
≤
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
1/6
October 1999
BDW93C/BDW94B/BDW94C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
1.56
oC/W
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BDW94B
ICBO
Collector Cut-off
Current (IE = 0)
for
VCB = 80 V
VCB = 100 V
100
100
µA
µA
for BDW93C/94C
Tcase = 150 oC
for BDW94B
VCB = 80 V
VCB = 100 V
5
5
mA
mA
for BDW93C/94C
BDW94B
ICEO
IEBO
Collector Cut-off
Current (IB = 0)
for
for BDW93C/94C
VCE = 80 V
VCE = 100 V
1
1
mA
mA
Emitter Cut-off Current VEB = 5 V
(IC = 0)
2
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
for BDW94B
for BDW93C/94C
80
100
V
V
VCE(sat)
VBE(sat)
hFE
Collector-Emitter
Saturation Voltage
IC = 5 A
IC = 10 A
IB = 20 mA
IB = 100 mA
2
3
V
V
Base-Emitter
Saturation Voltage
IC = 5 A
IC = 10 A
IB = 20 mA
IB = 100 mA
2.5
4
V
V
DC Current Gain
IC = 3 A
IC = 5 A
IC = 10 A
VCE = 3 V
VCE = 3 V
VCE = 3 V
1000
750
100
20K
VF*
hfe
Parallel-diode Forward IF = 5 A
1.3
1.8
2
4
V
V
Voltage
IF = 10 A
Small Signal Current
Gain
IC = 1 A
f = 1 MHz
VCE = 10 V
20
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
2/6
BDW93C/BDW94B/BDW94C
Safe Operating Area
DC Current Gain (NPN types)
Collector Emitter Saturation Voltage (NPN types)
DC Transconductance(NPN types)
Collector Emitter Saturation Voltage (NPN types)
Collector Emitter Saturation Voltage (PNP types)
3/6
BDW93C/BDW94B/BDW94C
SaturatedSwitching Characteristics (NPN types)
SaturatedSwitching Characteristics (PNP types)
Collector Emitter Saturation Voltage (PNP types)
DC Current Gain (PNP types)
DC Transconductance(PNP types)
4/6
BDW93C/BDW94B/BDW94C
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
TYP.
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
P011C
5/6
BDW93C/BDW94B/BDW94C
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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6/6
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