首页 |元器件品牌

BDW93C [ISC]

Silicon NPN Power Transistor; 硅NPN功率晶体管
BDW93C
型号： BDW93C
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon NPN Power Transistor
硅NPN功率晶体管

晶体 晶体管 开关 PC 局域网
文件： 总2页 (文件大小：237K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BDW93/A/B/C  
DESCRIPTION  
·Collector Current -IC= 12A  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 45V(Min)- BDW93; 60V(Min)- BDW93A  
80V(Min)- BDW93B; 100V(Min)- BDW93C  
·Complement to Type BDW94/A/B/C  
APPLICATIONS  
·Designed for hammer drivers, audio amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  
SYMBOL  
PARAMETER  
VALUE  
45  
UNIT  
BDW93  
BDW93A  
BDW93B  
BDW93C  
BDW93  
60  
Collector-Base  
Voltage  
VCBO  
V
80  
100  
45  
BDW93A  
BDW93B  
BDW93C  
60  
Collector-Emitter  
Voltage  
VCEO  
V
80  
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
A
Collector Current-Continuous  
Collector Current-Peak  
Base Current  
12  
15  
A
0.2  
80  
A
Collector Power Dissipation  
PC  
TJ  
W
℃
℃
@ TC=25℃  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
1.5  
℃/W  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BDW93/A/B/C  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
BDW93  
45  
BDW93A  
BDW93B  
BDW93C  
60  
80  
Collector-Emitter  
Sustaining Voltage  
VCEO(SUS)  
IC= 100mA; IB= 0  
V
100  
VCE(sat)-1  
VCE(sat)-2  
VBE(sat)-1  
VBE(sat)-1  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
BDW93  
IC= 5A; IB= 20mA  
IC= 10A; IB= 0.1A  
IC= 5A; IB= 20mA  
IC= 10A; IB= 0.1A  
VCB= 45V; IE= 0  
VCB= 60V; IE= 0  
CB= 80V; IE= 0  
VCB= 100V; IE= 0  
VCE= 45V; IB= 0  
VCE= 60V; IB= 0  
VCE= 80V; IB= 0  
2.0  
3.0  
2.5  
4.0  
V
V
V
V
BDW93A  
Collector  
ICBO  
0.1  
mA  
Cutoff Current  
BDW93B  
BDW93C  
BDW93  
BDW93A  
Collector  
ICEO  
1.0  
mA  
mA  
Cutoff Current  
BDW93B  
BDW93C  
Emitter Cutoff Current  
DC Current Gain  
VCE= 100V; IB= 0  
IEBO  
hFE-1  
hFE-2  
VEB= 5V; IC= 0  
IC= 3A; VCE= 3V  
IC= 5A; VCE= 3V  
2.0  
1000  
750  
DC Current Gain  
20000  
hFE-3  
VECF-1  
VECF-2  
DC Current Gain  
IC= 10A; VCE= 3V  
IF= 5A  
100  
C-E Diode Forward Voltage  
C-E Diode Forward Voltage  
2.0  
4.0  
V
V
IF= 10A  
2
isc Website：www.iscsemi.cn  

相关型号：

BDW93CF

 Hammer Drivers, Audio Amplifiers Applications
FAIRCHILD

BDW93CFI

 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 12A I(C) | TO-220AB
ETC

BDW93CFP

 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMICROELECTR

BDW93CFP_01

 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMICROELECTR

BDW93CFTU

 Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD

BDW93CJ69Z

 Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD

BDW93CTU

 NPN Epitaxial Silicon Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL
FAIRCHILD

BDW93CTU

 NPN外延硅晶体管
ONSEMI

BDW93J69Z

 Power Bipolar Transistor, 12A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD

BDW94

 Power Linear and Switching Applications
FAIRCHILD

BDW94

 POWER TRANSISTORS(12A,45-100V,80W)
MOSPEC

BDW94

 PNP SILICON POWER DARLINGTONS
TRSYS
©2020 ICPDF网 联系我们和版权申明