BDW93B-T [MCC]
Transistor;![BDW93B-T](http://pdffile.icpdf.com/pdf2/p00280/img/icpdf/BDW93B-TP_1673550_icpdf.jpg)
型号: | BDW93B-T |
厂家: | ![]() |
描述: | Transistor |
文件: | 总2页 (文件大小:764K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BDW93B
Micro Commercial Components
Features
·
With TO-220 package
NPN Silicon
Power Transistors
·
Intended for use in power linear and switching applications
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
•
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
ICP
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Peak Collector Current
Collector Current
Rating
80
80
5.0
15
Unit
V
V
V
A
TO-220
B
L
M
C
D
IC
12
A
PC
TJ
TSTG
Collector power dissipation
Junction Temperature
Storage Temperature
80
W
OC
OC
A
K
-55 to +150
-55 to +150
E
F
PIN
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
G
OFF CHARACTERISTICS
I
J
V(BR)CEO
Collector-Emitter Breakdown Voltage
80
---
---
---
0.1
2.0
Vdc
mAdc
mAdc
1
2
3
(I =100mAdc, IB=0)
C
N
H
H
ICBO
Collector-Base Cutoff Current
(VCB=80Vdc,IE=0)
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
IEBO
Emitter-Base Cutoff Current
(VEB=5.0Vdc, I =0)
C
ON CHARACTERISTICS
hFE-1
Forward Current Transfer ratio
1000
750
100
---
---
20000
---
---
---
(I =3.0Adc, VCE=3.0Vdc)
C
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hFE-2
Forward Current Transfer ratio
ꢀ ꢀ ꢀ ꢀ
INCHES
MM
(I =5.0Adc, VCE=3.0Vdc)
C
ꢁꢂꢃ
A
B
ꢃꢂꢄ
.560
.380
.100
ꢃꢅꢆ
ꢃꢂꢄ
14.22
9.65
ꢃꢅꢆ
15.88
10.67
3.43
ꢄꢇꢈꢉ
hFE-3
Forward Current Transfer ratio
---
.625
.420
.135
(I =10Adc, VCE=3.0Vdc)
C
C
2.54
VCE(sat)-1
VCE(sat)-2
VBE(sat)-1
VBE(sat)-2
Collector-Emitter Saturation Voltage
(I =5.0Adc, I =20mAdc)
2.0
Vdc
Vdc
Vdc
Vdc
D
E
.230
.380
.270
.420
5.84
9.65
6.86
10.67
C
B
Collector-Emitter Saturation Voltage
---
3.0
F
G
------
.500
.250
.580
------
12.70
6.35
14.73
(I =10Adc, IB=100mAdc)
C
H
.090
.110
2.29
2.79
Base-Emitter Saturation Voltage
---
2.5
I
J
.020
.012
.045
.025
0.51
0.30
1.14
0.64
(I =5.0Adc,IB=20Adc)
C
K
.139
.161
3.53
4.09
Base-Emitter Saturation Voltage
---
4.0
L
M
N
.140
.045
.080
.190
.055
.115
3.56
1.14
2.03
4.83
1.40
2.92
(I =10Adc,IB=100Adc)
C
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Revision: 2
2006/05/25
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Micro Commercial Components
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product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
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Revision: 2
2006/05/25
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BDW93BJ69Z
Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
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