BDW93B [FAIRCHILD]
Hammer Drivers, Audio Amplifiers Applications; 锤驱动器，音频放大器应用
| 型号： | BDW93B |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Hammer Drivers, Audio Amplifiers Applications |
| 文件： | 总5页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDW93/A/B/C
Hammer Drivers,
Audio Amplifiers Applications
•
•
Power Darlington TR
Complement to BDW94, BDW94A, BDW94B and BDW94C respectively
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC)
CBO
: BDW93
45
60
80
V
V
V
V
: BDW93A
: BDW93B
: BDW93C
100
V
CEO
: BDW93
45
60
80
V
V
V
V
: BDW93A
: BDW93B
: BDW93C
100
I
I
I
12
15
A
A
C
*Collector Current (Pulse)
Base Current
CP
B
0.2
A
P
Collector Dissipation (T =25°C)
80
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 65 ~ 150
STG
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
R
Thermal Resistance
Junction to Case
1.5
°C/W
θjc
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
(sus) * Collector-Emitter Sustaining Voltage
CEO
: BDW93
I
= 100mA, I = 0
45
60
80
V
V
V
V
C
B
: BDW93A
: BDW93B
: BDW93C
100
I
I
I
Collector Cut-off Current
: BDW93
CBO
CEO
EBO
V
V
V
V
= 45V, I = 0
100
100
100
100
µA
µA
µA
µA
CB
CB
CB
CB
E
: BDW93A
: BDW93B
: BDW93C
= 60V, I = 0
E
= 80V, I = 0
E
= 100V, I = 0
E
Collector Cut-off Current
: BDW93
V
V
V
V
= 45V, I = 0
1
1
1
1
mA
mA
mA
mA
CE
CE
CE
CE
B
: BDW93A
: BDW93B
: BDW93C
= 60V, I = 0
B
= 80V, I = 0
B
= 100V, I = 0
B
Emitter Cut-off Current
* DC Current Gain
V
= 5V, I = 0
2
mA
EB
C
h
V
V
V
= 3V, I = 3A
1000
750
100
FE
CE
CE
CE
C
= 3V, I = 5A
20000
C
= 3V, I = 10A
C
V
V
V
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Parallel Diode Forward Voltage
I
I
= 5A, I = 20mA
2
3
V
V
CE
BE
F
C
C
B
= 10A, I = 100mA
B
(sat)
I
I
= 5A, I = 20mA
2.5
4
V
V
C
C
B
= 10A, I = 100mA
B
I = 5A
1.3
1.8
2
4
V
V
F
I = 10A
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical characteristics
100k
10k
1k
10
VCE = 3V
IC= 250 IB
1
100
0.1
0.1
0.1
1
10
100
1
10
100
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
20
16
12
8
1000
f=1MHz
IE=0
VCE = 3 V
100
4
10
0
0.0
1
10
100
0.8
1.6
2.4
3.2
4.0
VBE [V], BASE-EMITTER VOLTAGE
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector Output Capacitance
100
80
60
40
20
0
100
10
1
IC MAX.
5 ms 1 ms
100 us
DC
BDW93
BDW93A
BDW93B
BDW93C
0.1
0
25
50
75
100
125
150
175
200
1
10
100
1000
TC [oC], CASE TEMPERATURE
VCE [V], COLLECTOR EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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