BDW93B [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BDW93B |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总2页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDW93/A/B/C
DESCRIPTION
·Collector Current -IC= 12A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDW93; 60V(Min)- BDW93A
80V(Min)- BDW93B; 100V(Min)- BDW93C
·Complement to Type BDW94/A/B/C
APPLICATIONS
·Designed for hammer drivers, audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
45
UNIT
BDW93
BDW93A
BDW93B
BDW93C
BDW93
60
Collector-Base
Voltage
VCBO
V
80
100
45
BDW93A
BDW93B
BDW93C
60
Collector-Emitter
Voltage
VCEO
V
80
100
5
VEBO
IC
ICM
IB
Emitter-Base Voltage
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
12
15
A
0.2
80
A
Collector Power Dissipation
PC
TJ
W
℃
℃
@ TC=25℃
Junction Temperature
150
-65~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
1.5
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDW93/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDW93
45
BDW93A
BDW93B
BDW93C
60
80
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC= 100mA; IB= 0
V
100
VCE(sat)-1
VCE(sat)-2
VBE(sat)-1
VBE(sat)-1
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
BDW93
IC= 5A; IB= 20mA
IC= 10A; IB= 0.1A
IC= 5A; IB= 20mA
IC= 10A; IB= 0.1A
VCB= 45V; IE= 0
VCB= 60V; IE= 0
CB= 80V; IE= 0
VCB= 100V; IE= 0
VCE= 45V; IB= 0
VCE= 60V; IB= 0
VCE= 80V; IB= 0
2.0
3.0
2.5
4.0
V
V
V
V
BDW93A
Collector
ICBO
0.1
mA
Cutoff Current
BDW93B
BDW93C
BDW93
BDW93A
Collector
ICEO
1.0
mA
mA
Cutoff Current
BDW93B
BDW93C
Emitter Cutoff Current
DC Current Gain
VCE= 100V; IB= 0
IEBO
hFE-1
hFE-2
VEB= 5V; IC= 0
IC= 3A; VCE= 3V
IC= 5A; VCE= 3V
2.0
1000
750
DC Current Gain
20000
hFE-3
VECF-1
VECF-2
DC Current Gain
IC= 10A; VCE= 3V
IF= 5A
100
C-E Diode Forward Voltage
C-E Diode Forward Voltage
2.0
4.0
V
V
IF= 10A
2
isc Website：www.iscsemi.cn
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