BDW93B [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BDW93B |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDW93/A/B/C
DESCRIPTION
·With TO-220C package
·High DC Current Gain
·DARLINGTON
·Complement to type BDW94/A/B/C
APPLICATIONS
·Hammer drivers,
·Audio amplifiers applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
45
UNIT
BDW93
BDW93A
BDW93B
BDW93C
BDW93
60
VCBO
Collector-base voltage
Open emitter
Open base
V
80
100
45
BDW93A
BDW93B
BDW93C
60
VCEO
Collector-emitter voltage
V
80
100
5
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current
Open collector
V
A
A
A
W
ꢀ
12
15
0.2
80
PC
Tj
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
150
-65~150
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
1.5
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDW93/A/B/C
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX
UNIT
BDW93
BDW93A
BDW93B
BDW93C
60
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A, IB=0
V
80
100
VCEsat-1
VCEsat-2
VBEsat-1
VBEsat-2
Collector-emitter saturation voltage IC=5A ,IB=20mA
Collector-emitter saturation voltage IC=10A ,IB=0.1A
2.0
3.0
2.5
4.0
V
V
V
V
Base-emitter saturation voltage
Base-emitter saturation voltage
BDW93
IC=5A ,IB=20mA
IC=10A ,IB=0.1A
VCB=45V, IE=0
VCB=60V, IE=0
VCB=80V, IE=0
VCB=100V, IE=0
VCE=45V, IB=0
VCE=60V, IB=0
VCE=80V, IB=0
VCE=100V, IB=0
VEB=5V; IC=0
IC=3A ; VCE=3V
IC=5A ; VCE=3V
IC=10A ; VCE=3V
IF=5A
BDW93A
Collector
ICBO
0.1
mA
cut-off current
BDW93B
BDW93C
BDW93
BDW93A
Collector
ICEO
1.0
mA
mA
cut-off current
BDW93B
BDW93C
Emitter cut-off current
DC current gain
IEBO
hFE-1
hFE-2
hFE-3
VF-1
2
1000
750
DC current gain
20000
DC current gain
100
Forward diode voltage
Forward diode voltage
2.0
4.0
V
V
VF-2
IF=10A
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDW93/A/B/C
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
BDW93B-BP-HF
Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
MCC
BDW93BJ69Z
Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明