MW6IC2015NBR1 [NXP]
1805MHz - 1990MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1329-09, WB-16, TO-272, 16 PIN;
| 型号： | MW6IC2015NBR1 |
| 厂家： | 
NXP |
| 描述： | 1805MHz - 1990MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1329-09, WB-16, TO-272, 16 PIN 高功率电源 放大器 射频 微波 功率放大器 |
| 文件： | 总28页 (文件大小：1230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MW6IC2015N
Rev. 3, 12/2008
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
MW6IC2015NBR1
MW6IC2015GNBR1
The MW6IC2015N wideband integrated circuit is designed for base station
applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS
IC technology and integrates a multi-stage structure. Its wideband on-chip
design makes it usable from 1805 to 1990 MHz. The linearity performances
cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS,
TDMA, CDMA, W-CDMA and TD-SCDMA.
1805-1990 MHz, 15 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
Final Application
INTEGRATED POWER AMPLIFIERS
• Typical Two-Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2
170 mA, Pout = 15 Watts PEP, f = 1930 MHz
Power Gain — 26 dB
=
Power Added Efficiency — 28%
IMD — -30 dBc
CASE 1329-09
TO-272 WB-16
PLASTIC
Driver Application
• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 130 mA, IDQ2
170 mA, Pout = 3 Watts Avg., Full Frequency Band (1805-1880 MHz or
1930-1990 MHz)
=
MW6IC2015NBR1
Power Gain — 27 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = -69 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 0.8% rms
CASE 1329A-04
TO-272 WB-16 GULL
PLASTIC
• Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 8 W CW
MW6IC2015GNBR1
Pout
.
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
GND
V
NC
NC
NC
1
2
3
4
5
16
15
GND
NC
DS1
V
DS1
RF
V
/
out
RF
6
14
RF
RF /V
out DS2
in
in
DS2
7
8
9
10
NC
V
V
GS1
GS2
NC
V
V
GS1
GS2
Quiescent Current
Temperature Compensation
13
12
NC
GND
(1)
GND
11
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2006-2008. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +6
-65 to +150
150
Unit
Vdc
Vdc
°C
Drain-Source Voltage
V
DSS
Gate-Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
T
stg
T
°C
C
(1,2)
T
225
°C
J
P
20
dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
°C/W
Final Application
(P = 15 W CW)
out
Stage 1, 26 Vdc, I
Stage 2, 26 Vdc, I
= 100 mA
= 170 mA
4.3
1.2
DQ1
DQ2
Driver Application
(P = 3 W CW)
out
Stage 1, 26 Vdc, I
Stage 2, 26 Vdc, I
= 130 mA
= 170 mA
4.3
1.3
DQ1
DQ2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale 1930-1990 MHz Test Fixture, 50 ohm system) V = 26 Vdc, I
= 100 mA, I = 170 mA, P = 15 W
DQ2 out
DD
DQ1
PEP, f1 = 1930 MHz, f2 = 1930.1 MHz, Two-Tone CW
Power Gain
G
24
26
—
—
dB
%
ps
Power Added Efficiency
Intermodulation Distortion
Input Return Loss
PAE
IMD
IRL
26
—
—
28
-30
-27
dBc
dB
—
-10
Typical Two-Tone Performances (In Freescale Test Fixture, 50 ohm system) V = 26 Vdc, I
= 100 mA, I
= 170 mA, P
=
DD
DQ1
DQ2
out
15 W PEP, 1805-1880 MHz, Two-Tone CW, 100 kHz Tone Spacing
Power Gain
G
—
—
—
—
26
28
—
—
—
—
dB
%
ps
Power Added Efficiency
PAE
IMD
IRL
Intermodulation Distortion
Input Return Loss
-30
-10
dBc
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
= 100 mA, I = 170 mA, 1805-1880 MHz and
DQ2
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 26 Vdc, I
DD
DQ1
1930-1990 MHz
Saturated Pulsed Output Power, CW
(8 μsec(on), 1 msec(off))
P
—
—
35
3
—
—
W
%
sat
Quiescent Current Accuracy over Temperature
with 1.8 kΩ Gate Feed Resistors (-10 to 85°C)
ΔI
QT
(1)
Gain Flatness in 30 MHz Bandwidth @ P = 3 W CW
G
—
—
0.3
1
—
—
dB
out
F
Average Deviation from Linear Phase in 30 MHz Bandwidth
Φ
°
@ P = 3 W CW
out
Average Group Delay @ P = 3 W CW Including Output Matching
Delay
—
—
2.7
15
—
—
ns
out
Part-to-Part Insertion Phase Variation @ P = 3 W CW,
ΔΦ
°
out
Six Sigma Window
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V = 26 Vdc, I
= 130 mA, I = 170 mA,
DQ2
DD
DQ1
P
= 3 W Avg., 1805-1990 MHz and 1930-1990 MHz EDGE Modulation
out
Power Gain
G
—
—
—
—
—
27
—
—
—
—
—
dB
%
ps
Power Added Efficiency
PAE
EVM
SR1
SR2
19
Error Vector Magnitude
0.8
-69
-78
%
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
dBc
dBc
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
3
V
DD2
1
2
3
4
5
DUT
16
V
DD1
C2
C3
NC 15
Z8
NC
NC
NC
C1
RF
INPUT
RF
OUTPUT
C7
C9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
14
6
C11
C6
7
8
9
NC
C8
C10
C12 C13
V
Quiescent Current
Temperature Compensation
GG1
R1
Z9
NC 13
12
10 NC
11
C14
C15
V
GG2
R2
C4
C5
Z1*
Z2
Z3
Z4
Z5
1.68″ x 0.08″ Microstrip
0.50″ x 0.08″ Microstrip
0.15″ x 0.04″ Microstrip
0.13″ x 0.35″ Microstrip
0.10″ x 0.35″ Microstrip
Z6*
Z7
Z8, Z9
PCB
0.61″ x 0.04″ Microstrip
1.30″ x 0.04″ Microstrip
1.18″ x 0.08″ Microstrip
Taconic TLX8-0300, 0.030″, ε = 2.55
r
* Variable for tuning.
Figure 3. MW6IC2015NBR1(GNBR1) Test Circuit Schematic — 1930-1990 MHz
Table 6. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values — 1930-1990 MHz
Part
C1, C14, C15
Description
2.2 μF Chip Capacitors
Part Number
Manufacturer
TDK
C3225X5R1H225MT
ATC100B5R6CT500XT
C5750X5R1H106MT
ATC100B1R0BT500XT
ATC100B2R2BT500XT
ATC100B0R5BT500XT
ATC100B0R2BT500XT
ATC100B0R1BT500XT
CRCW12061002FKEA
CRCW120618R0FKEA
C2, C4, C11
C3, C5
C6
5.6 pF Chip Capacitors
10 μF Chip Capacitors
1 pF Chip Capacitor
ATC
TDK
ATC
C7, C8
C9, C10
C12
2.2 pF Chip Capacitors
0.5 pF Chip Capacitors
0.2 pF Chip Capacitor
0.1 pF Chip Capacitor
10 kΩ, 1/4 W Chip Resistor
18 Ω, 1/4 W Chip Resistor
ATC
ATC
ATC
C13
ATC
R1
Vishay
Vishay
R2
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
4
V
DD1
C3
C2
V
DD2
MW6IC2015, Rev. 0
C1
C9
C7
C8
C11
C10
C6
C12 C13
C14
R1
V
GG1
R2
C15
C4
C5
V
GG2
Figure 4. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout — 1930-1990 MHz
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — 1930-1990 MHz
40
0
35
−10
−20
−30
−40
−50
−60
PAE
30
25
20
15
10
G
ps
IRL
IMD
V
= 26 Vdc, P = 7.5 W (Avg.)
out
DD
I
DQ1
100 kHz Tone Spacing
= 100 mA, I
= 170 mA
DQ2
1900
1920 1940
1960
1980
2000
f, FREQUENCY (MHz)
Figure 5. Two-Tone Wideband Performance
@ Pout = 7.5 Watts Avg.
30
25
20
0
G
ps
−10
−20
−30
IRL
15
10
IMD
PAE
−40
−50
−60
V
= 26 Vdc, P = 1.5 W (Avg.)
out
5
0
DD
I
DQ1
100 kHz Tone Spacing
= 100 mA, I
= 170 mA
DQ2
1900
1920
1940
1960
1980
2000
f, FREQUENCY (MHz)
Figure 6. Two-Tone Wideband Performance
@ Pout = 1.5 Watts Avg.
−10
31
30
29
28
27
26
25
I
I
= 130 mA
= 170 mA
I
I
= 100 mA
= 210 mA
DQ1
DQ1
V
= 26 Vdc
= 100 mA, I
3rd Order
DD
DQ2
DQ2
−20
−30
−40
−50
−60
−70
−80
I
= 170 mA
f = 1960 MHz, 100 kHz Tone Spacing
DQ1
DQ2
I
= 100 mA
= 170 mA
DQ1
I
DQ2
5th Order
I
I
= 100 mA
= 130 mA
DQ1
I
I
= 70 mA
= 170 mA
DQ1
DQ2
DQ2
7th Order
V
= 26 Vdc
DD
Center Frequency = 1960 MHz
100 kHz Tone Spacing
24
23
0.1
1
10
30
0.1
1
10
30
P
, OUTPUT POWER (WATTS) AVG.
out
P
, OUTPUT POWER (WATTS) PEP
out
Figure 7. Two-Tone Power Gain versus
Output Power
Figure 8. Intermodulation Distortion Products
versus Output Power
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS — 1930-1990 MHz
48
−30
−40
−50
Ideal
P3dB = 44.8 dBm (30 W)
46
3rd Order
5th Order
P1dB = 44 dBm (25 W)
44
Actual
42
−60
−70
−80
7th Order
V
= 26 Vdc
DD
V
= 26 Vdc, P = 75 W (PEP)
out
DD
I
= 100 mA, I = 170 mA
DQ2
40
38
DQ1
I
DQ1
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
= 100 mA, I
= 170 mA
DQ2
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
0.1
1
10
100
10
15
20
25
30
P , INPUT POWER (dBm)
in
TWO−TONE SPACING (MHz)
Figure 10. Pulsed CW Output Power versus
Input Power
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
35
−25
−30
V
= 26 Vdc
= 100 mA, I
DD
I
= 170 mA
f1 = 1955 MHz, f2 = 1965 MHz
DQ1
DQ2
30
G
−35
−40
−45
−50
25
20
ps
2−Carrier W−CDMA
10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
15 Probability (CCDF)
10
IM3
5
−55
−60
ACPR
1
PAE
0
10
30
0.1
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 11. 2-Carrier W-CDMA ACPR, IM3, Power
Gain and Power Added Efficiency
versus Output Power
50
40
30
20
30
28
26
24
22
20
18
32
30
28
26
24
22
T
= −30_C
26 V
C
25_C
−30_C
25_C
30 V
28 V
85_C
V
= 26 Vdc
= 100 mA
= 170 mA
DD
DQ1
DQ2
I
I
G
ps
V
= 20 V
DD
PAE
f = 1960 MHz
85_C
I
I
= 100 mA
= 170 mA
DQ1
10
0
DQ2
f = 1840 MHz
0
5
10
15
20
25
30
0.1
1
10
30
P
, OUTPUT POWER (WATTS) CW
out
P
, OUTPUT POWER (WATTS) CW
out
Figure 13. Power Gain versus Output Power
Figure 12. Power Gain and Power Added
Efficiency versus CW Output Power
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS — 1930-1990 MHz
28
27
26
25
24
−10
−15
−20
−25
−30
32
30
28
26
24
22
S21
T
= −30_C
C
25_C
85_C
V
P
= 26 Vdc
DD
out
= 35 dBm CW
= 100 mA
= 170 mA
V
= 26 Vdc, P = 7.5 W (Avg.)
out
DD
I
I
DQ1
DQ2
I
= 100 mA, I
= 170 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
DQ1
DQ2
S11
1850
1900
1950
2000
2050
2100
1880
1900
1920
1940
1960
1980
2000
2020
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 15. Power Gain versus Frequency
Figure 14. Broadband Frequency Response
50
40
30
−50
−55
−60
−65
−70
−75
−80
−85
10
25_C
25_C
V
= 26 Vdc
= 100 mA
= 170 mA
V
I
= 26 Vdc, I = 100 mA
= 170 mA, f = 1960 MHz
DD
DQ1
DQ2
T
= −30_C
85_C
DD
DQ1
C
I
I
DQ2
T
= −30_C
C
8
6
EDGE Modulation
f = 1960 MHz
EDGE Modulation
SR @ 400 kHz
85_C
EVM
PAE
20
10
0
4
2
0
−30_C
SR @ 600 kHz
85_C
25_C
0.1
1
10
30
1
10
30
P
, OUTPUT POWER (WATTS) AVG.
out
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 17. Spectral Regrowth at 400 and 600 kHz
versus Output Power
Figure 16. EVM and Power Added Efficiency
versus Output Power
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
8
TYPICAL CHARACTERISTICS
9
8
7
10
10
10
1st Stage
2nd Stage
6
5
10
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 26 Vdc, P = 15 W PEP, and PAE = 28%.
DD
out
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 18. MTTF versus Junction Temperature
GSM TEST SIGNAL
−10
−20
−30
Reference Power
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
−40
−50
−60
−70
−80
−90
−100
400 kHz
400 kHz
600 kHz
600 kHz
−110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 19. EDGE Spectrum
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
9
f = 1930 MHz
f = 1990 MHz
Z
load
Z = 25 Ω
o
f = 1930 MHz
f = 1990 MHz
Z
source
V
= 26 Vdc, I
= 100 mA, I = 170 mA, P = 15 W CW
DQ2 out
DD
DQ1
f
Z
Z
load
W
source
W
MHz
1930
1950
1970
1990
23.37 - j21.93
22.77 - j22.53
22.19 - j22.20
22.64 - j21.84
1.62 + j0.26
1.59 + j0.04
1.57 - j0.16
1.54 - j0.36
Z
=
Test circuit impedance as measured from
gate to ground.
source
Z
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 20. Series Equivalent Source and Load Impedance — 1930-1990 MHz
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
10
V
DD2
1
2
3
4
5
DUT
16
V
DD1
C2
C3
NC 15
Z9
NC
NC
NC
C1
RF
INPUT
RF
OUTPUT
C7
C9
Z1
V
Z2
Z3
Z4
Z5
Z6
Z7
Z8
14
6
C11
C6
7
8
9
NC
C8
C10
C16
C12 C13
Quiescent Current
Temperature Compensation
R1
GG1
Z10
NC 13
12
10 NC
11
C14
C15
V
GG2
R2
C4
C5
Z1*
1.64″ x 0.08″ Microstrip
0.54″ x 0.08″ Microstrip
0.15″ x 0.04″ Microstrip
0.13″ x 0.35″ Microstrip
0.10″ x 0.35″ Microstrip
0.26″ x 0.04″ Microstrip
Z7*
Z8
Z9, Z10
PCB
0.41″ x 0.04″ Microstrip
1.18″ x 0.04″ Microstrip
1.18″ x 0.08″ Microstrip
Z2
Z3
Z4
Z5
Z6*
Taconic TLX8-0300, 0.030″, ε = 2.55
r
* Variable for tuning.
Figure 21. MW6IC2015NBR1(GNBR1) Test Circuit Schematic — 1805-1880 MHz
Table 7. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values — 1805-1880 MHz
Part
C1, C14, C15
Description
2.2 μF Chip Capacitors
Part Number
Manufacturer
TDK
C3225X5R1H225MT
ATC100B5R6CT500XT
C5750X5R1H106MT
ATC100A1R5BT500XT
ATC100B2R7BT500XT
ATC100B0R8BT500XT
ATC100B0R1BT500XT
ATC100B1R0BT500XT
CRCW12061002FKEA
CRCW120618R0FKEA
C2, C4, C11
C3, C5
C6
5.6 pF Chip Capacitors
10 μF Chip Capacitors
1.5 pF Chip Capacitor
2.7 pF Chip Capacitors
0.8 pF Chip Capacitors
0.1 pF Chip Capacitor
1 pF Chip Capacitor
ATC
TDK
ATC
C7, C8
C9, C10, C12
C13
ATC
ATC
ATC
C16
ATC
R1
10 kΩ, 1/4 W Chip Resistor
18 Ω, 1/4 W Chip Resistor
Vishay
Vishay
R2
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
11
V
DD1
C3
C2
V
DD2
MW6IC2015, Rev. 0
C1
C9
C7
C8
C11
C10
C6
C16
C12 C13
C14
R1
V
GG1
R2
C15
C4
C5
V
GG2
Figure 22. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout — 1805-1880 MHz
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
12
TYPICAL CHARACTERISTICS — 1805-1880 MHz
32
31
0
IRL
−10
−20
−30
−40
−50
−60
30
29
28
27
26
PAE
IMD
G
ps
V
= 26 Vdc, P = 7.5 W (Avg.)
out
DD
I
DQ1
100 kHz Tone Spacing
= 100 mA, I
= 170 mA
DQ2
1800
1820 1840
1860
1880
1900
f, FREQUENCY (MHz)
Figure 23. Two-Tone Wideband Performance
@ Pout = 7.5 Watts Avg.
30
26
22
18
14
10
0
G
ps
−12
−24
−36
IRL
V
= 26 Vdc, P = 1.5 W (Avg.)
out
DD
I
DQ1
100 kHz Tone Spacing
= 100 mA, I
= 170 mA
DQ2
IMD
−48
−60
PAE
1800
1820
1840
1860
1880
f, FREQUENCY (MHz)
Figure 24. Two-Tone Wideband Performance
@ Pout = 1.5 Watts Avg.
−10
32
31
30
29
28
27
I
I
= 130 mA
= 170 mA
I
I
= 100 mA
= 210 mA
DQ1
DQ1
V
= 26 Vdc
= 100 mA, I
DD
3rd Order
DQ2
DQ2
−20
−30
−40
−50
−60
−70
−80
I
= 170 mA
f = 1840 MHz, 100 kHz Tone Spacing
DQ1
DQ2
I
I
= 100 mA
= 170 mA
DQ1
5th Order
DQ2
I
I
= 100 mA
= 130 mA
DQ1
I
I
= 70 mA
= 170 mA
DQ2
DQ1
DQ2
7th Order
26
V
= 26 Vdc
DD
Center Frequency = 1840 MHz
100 kHz Tone Spacing
25
24
0.1
1
, OUTPUT POWER (WATTS) PEP
10
30
0.1
1
10
30
P
, OUTPUT POWER (WATTS) PEP
P
out
out
Figure 25. Two-Tone Power Gain versus
Output Power
Figure 26. Intermodulation Distortion
Products versus Output Power
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
13
TYPICAL CHARACTERISTICS — 1805-1880 MHz
−30
48
Ideal
P3dB = 44.7 dBm (30 W)
46
3rd Order
5th Order
−40
−50
P1dB = 44 dBm (25 W)
44
Actual
V
= 26 Vdc, P = 7.5 W (Avg.), I
= 100 mA
DD
out
DQ1
= 170 mA, Two−Tone Measurements
42
40
38
I
DQ2
(f1 + f2)/2 = Center Frequency of 1840 MHz
7th Order
V
= 26 Vdc
= 100 mA, I
DD
−60
−70
I
= 170 mA
DQ1
DQ2
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1840 MHz
0.1
1
10
100
10
15
20
25
30
P , INPUT POWER (dBm)
in
TWO−TONE SPACING (MHz)
Figure 28. Pulsed CW Output Power versus
Input Power
Figure 27. Intermodulation Distortion Products
versus Tone Spacing
40
−20
−25
−30
V
= 26 Vdc
= 100 mA, I
DD
35
30
I
= 170 mA
f1 = 1835 MHz, f2 = 1845 MHz
DQ1
DQ2
G
2−Carrier W−CDMA
ps
−35
−40
−45
25
20
15
10
10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
−50
−55
−60
IM3
5
0
ACPR
PAE
0.1
1
10
30
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 29. 2-Carrier W-CDMA ACPR, IM3, Power
Gain and Power Added Efficiency
versus Output Power
50
30
32
30
28
26
24
22
−30_C
30 V
28 V
T
= −30_C
25_C
C
28
40
25_C
26
85_C
30
26 V
24 V
24
PAE
V
= 20 V
DD
20
22
20
18
G
ps
85_C
I
I
= 100 mA
= 170 mA
DQ1
10
0
DQ2
V
= 26 Vdc, I = 100 mA
DQ1
= 170 mA, f = 1840 MHz
DD
f = 1840 MHz
I
DQ2
0
5
10
15
20
25
0.1
1
10
30
P
, OUTPUT POWER (WATTS) CW
out
P
, OUTPUT POWER (WATTS) CW
out
Figure 30. Power Gain and Power Added
Efficiency versus CW Output Power
Figure 31. Power Gain versus Output Power
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
14
TYPICAL CHARACTERISTICS — 1805-1880 MHz
27
26
25
24
−5
34
32
30
28
S11
S21
T
= −30_C
25_C
C
−10
−15
−20
−25
−30
−35
−40
23
22
21
20
26
24
22
85_C
V
I
= 26 Vdc, P = 7.5 W (Avg.)
out
= 100 mA, I
DD
V
= 26 Vdc, P = 35 dBm CW
out
DD
= 170 mA
Two−Tone Measurements, Center Frequency = 1840 MHz
DQ1
DQ2
I
= 100 mA, I
= 170 mA
DQ1
DQ2
1600
1700
1800
1900
2000
2100
2200
1780
1800
1820
1840
1860
1880
1900
1920
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 33. Power Gain versus Frequency
Figure 32. Broadband Frequency Response
50
10
−50
−55
−60
−30_C
V
I
= 26 Vdc
= 100 mA
= 170 mA
V
I
= 26 Vdc
T
= 85_C
DD
DD
T
= 25_C
C
C
= 100 mA, I = 170 mA
DQ2
DQ1
DQ2
DQ1
40
30
8
6
I
f = 1840 MHz, EDGE Modulation
f = 1840 MHz
EDGE Modulation
25_C
−30_C
−30_C
25_C
−65
−70
SR @ 400 kHz
85_C
PAE
20
10
0
4
2
0
−75
EVM
SR @ 600 kHz
−80
−85
85_C
1
10
, OUTPUT POWER (WATTS) AVG.
30
0.1
1
10
30
P
P
, OUTPUT POWER (WATTS) AVG.
out
out
Figure 34. EVM and Power Added Efficiency
versus Output Power
Figure 35. Spectral Regrowth at 400 and 600 kHz
versus Output Power
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
15
Z = 50 Ω
o
f = 1800 MHz
f = 1880 MHz
Z
load
f = 1880 MHz
Z
source
f = 1800 MHz
V
= 26 Vdc, I
= 130 mA, I = 170 mA, P = 3 W Avg.
DQ2 out
DD
DQ1
f
Z
Z
load
W
source
W
MHz
1800
1820
1840
1860
1880
24.32 - j26.99
23.96 - j25.93
23.86 - j25.63
23.01 - j24.23
23.55 - j23.33
1.94 - j1.29
1.88 - j1.42
1.83 - j1.54
1.79 - j1.64
1.74 - j1.75
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 36. Series Equivalent Source and Load Impedance — 1805-1880 MHz
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
16
TD-SCDMA CHARACTERIZATION
V
DD2
1
2
3
4
5
NC
DUT
16
NC
V
DD1
C2
C3
NC 15
Z9
NC
NC
NC
C1
RF
INPUT
RF
OUTPUT
C7
C8
C9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
14
6
C10
C6
7
8
NC
NC
C11
Quiescent Current
Temperature
Compensation
9
Z10
R1
NC 13
NC 12
10
11
V
GG
C12
C13
C14
R2
C4
C5
Z1
Z2
Z3
Z4
Z5
0.772″ x 0.056″ Microstrip
0.409″ x 0.056″ Microstrip
0.138″ x 0.237″ Microstrip
0.148″ x 0.237″ Microstrip
0.064″ x 0.237″ Microstrip
Z6
Z7
Z8
Z9, Z10
PCB
0.060″ x 0.237″ Microstrip
0.539″ x 0.056″ Microstrip
0.190″ x 0.056″ Microstrip
1.066″ x 0.078″ Microstrip
Taconic TLX8, 0.020″, ε = 2.55
r
Figure 37. MW6IC2015NBR1(GNBR1) Test Circuit Schematic — TD-SCDMA
Table 8. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values — TD-SCDMA
Part
C1, C3, C5, C14
C2, C4, C10
C6
Description
2.2 μF Chip Capacitors
Part Number
C3225X5R1H225MT
08051J5R6CBS
08051J1R0BBS
08051J2R7CBS
08051J0R5BBS
C1206CK104K5RC
3224W
Manufacturer
TDK
5.6 pF Chip Capacitors
AVX
1 pF Chip Capacitor
AVX
C7, C8
2.7 pF Chip Capacitors
AVX
C9, C11
0.5 pF Chip Capacitors
AVX
C12, C13
R1, R2
100 nF Chip Capacitors
Kemet
Bourns
5 kΩ Potentiometer CMS Cermet Multi-turn
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
17
V
V
DD2
DD1
C3
C2
C1
MW6IC2015NB, Rev. 1
C7 C9
C8
C11
C6
C10
C12
C13
C4
C14
C5
R1
R2
V
GG
Figure 38. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout — TD-SCDMA
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
18
TYPICAL CHARACTERISTICS
−20
−25
−30
−35
4
3−Carrier TD−SCDMA
= 28 V
3.5
3
V
= V
DD1
DD2
= 150 mA, I
I
DQ1
f = 2017.5 MHz
= 160 mA
DQ2
PAE
2.5
−40
−45
−50
2
Adj−U
1.5
Adj−L
1
Alt−L
Alt−U
−55
−60
0.5
0
15
17
19
21
23
25
27
P
, OUTPUT POWER (dBm) AVG.
out
Figure 39. 3-Carrier TD-SCDMA ACPR, ALT and
Power Added Efficiency versus Output Power
−20
−25
−30
−35
4
6−Carrier TD−SCDMA
= 28 V
3.5
3
V
= V
DD1
DD2
= 150 mA, I
I
DQ1
f = 2017.5 MHz
= 160 mA
DQ2
PAE
2.5
−40
−45
−50
2
Alt−L
Adj−L
Alt−U
1.5
1
Adj−U
−55
−60
0.5
0
15
17
19
21
23
25
27
P
, OUTPUT POWER (dBm) AVG.
out
Figure 40. 6-Carrier TD-SCDMA ACPR, ALT and
Power Added Efficiency versus Output Power
TD-SCDMA TEST SIGNAL
−30
−40
−50
−30
1.28 MHz
Channel BW
1.28 MHz
Channel BW
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−40
−50
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−60
−70
−60
−70
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−80
−80
−90
−90
−100
−110
−120
−130
−100
−110
−120
−130
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
Center 2.0175 GHz
1.5 MHz
f, FREQUENCY (MHz)
Span 15 MHz
Center 2.0175 GHz
2.5 MHz
f, FREQUENCY (MHz)
Span 25 MHz
Figure 41. 3-Carrier TD-SCDMA Spectrum
Figure 42. 6-Carrier TD-SCDMA Spectrum
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
19
Z = 50 Ω
o
Z
Z
load
source
f = 2070 MHz
f = 2070 MHz
f = 1950 MHz
f = 1950 MHz
V
= 28 Vdc, I
= 150 mA, I
= 160 mA
DD
DQ1
DQ2
f
Z
Z
load
W
source
W
MHz
1950
1960
1970
1980
1990
2000
2010
2020
2030
2040
2050
2060
2070
25.25 + j0.19
25.16 + j0.34
25.07 + j0.49
24.98 + j0.64
24.89 + j0.79
24.80 + j0.94
24.71 + j1.09
24.63 + j1.25
24.54 + j1.40
24.45 + j1.56
24.37 + j1.71
24.28 + j1.87
24.20 + j2.03
1.78 + j0.33
1.75 + j0.43
1.72 + j0.54
1.68 + j0.67
1.65 + j0.78
1.63 + j0.89
1.62 + j1.00
1.61 + j1.09
1.58 + j1.19
1.55 + j1.31
1.50 + j1.43
1.48 + j1.62
1.46 + j1.65
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 43. Series Equivalent Input and Load Impedance — TD-SCDMA
MW6IC2015NBR1 MW6IC2015GNBR1
20
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
21
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
22
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
23
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
24
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
25
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
26
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Feb. 2007
•
•
•
Added “and TD-SCDMA” to data sheet description paragraph, p. 1.
Updated verbiage on Typical Performances table, p. 2
Corrected V
and V
callouts, Figs. 3 and 21, Test Circuit Schematic, p. 4, 11, Figs. 4 and 22, Test
SUPPLY
BIAS
Circuit Component Layout, p. 5, 12
•
•
Updated Part Numbers in Tables 6 and 7, Component Designations and Values, to RoHS compliant part
numbers, p. 4, 11
Adjusted scale for Figs. 7 and 25, Two-Tone Power Gain versus Output Power, Figs. 8 and 26,
Intermodulation Distortion Products versus Output Power, Figs. 11 and 29, 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Power Added Efficiency versus Output Power, Figs. 12 and 30, Power Gain and Power
Added Efficiency versus CW Output Power, Figs. 16 and 34, EVM and Power Added Efficiency versus
Output Power, Figs. 17 and 35, Spectral Regrowth at 400 and 600 kHz versus Output Power, to better
match the device’s capabilities, p. 6-8, 13-15
2
•
Replaced Figure 18, MTTF versus Junction Temperature with updated graph. Removed Amps and listed
operating characteristics and location of MTTF calculator for device, p. 9
•
•
Corrected Series Impedance data table test conditions, Figs. 20 and 36, p. 10, 16
Added TD-SCDMA test circuit schematic, component designations and values, component layout, typical
characteristic curves, test signal and series impedance, p. 17-20.
•
•
Added Product Documentation and Revision History, p. 27
3
Dec. 2008
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
•
•
Changed 220°C to 225°C in Capable Plastic Package bullet, p. 1
Added Footnote 1 to Quiescent Current Temperature bullet under Features section and to callout in Fig. 1,
Functional Block Diagram, p. 1
•
Changed Storage Temperature Range in Max Ratings table from -65 to +200 to -65 to +150 for
standardization across products, p. 2
•
•
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 2
•
•
•
•
Updated Part Numbers in Tables 6, 7, and 8 Component Designations and Values, to latest RoHS compliant
part numbers, p. 4, 11, 17
Removed lower voltage tests from Figs. 13 and 31, Power Gain versus Output Power, due to fixed tuned
fixture limitations, p. 7, 14
Adjust scale for Fig. 27, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
range, p. 14
Replaced Case Outline 1329A-03 with 1329A-04, Issue F, p. 1, 24-26. Added pin numbers 1 through 17.
Corrected mm dimension L for gull-wing foot from 4.90-5.06 Min-Max to 0.46-0.61 Min-Max. Corrected L1
mm dimension from .025 BSC to 0.25 BSC. Added JEDEC Standard Package Number.
•
Replaced Case Outline 1329-09, Issue L, with 1329-09, Issue M, p. 21-23. Added pin numbers 1 through
17.
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
27
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Document Number: MW6IC2015N
Rev. 3, 12/2008
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