MW6S004NT1 [FREESCALE]
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET; 射频功率场效应晶体管N沟道增强模式横向MOSFET
| 型号： | MW6S004NT1 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 文件： | 总12页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MW6S004N
Rev. 1, 4/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for Class A or Class AB base station applications with frequencies
up to 2000 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
MW6S004NT1
• Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA,
Pout = 4 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 33%
IMD — -34 dBc
1-2000 MHz, 4 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFET
• Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA,
Pout = 4 Watts PEP
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — -39 dBc
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output
Power
Features
CASE 466-03, STYLE 1
PLD 1.5
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip RF Feedback for Broadband Stability
• Integrated ESD Protection
PLASTIC
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +12
- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GS
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 4 W PEP, Two-Tone
Case Temperature 79°C, 4 W CW
R
°C/W
θ
JC
8.8
8.5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
III (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
10
µAdc
µAdc
nAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
I
500
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 50 mAdc)
V
V
1
2
2.3
2.8
5
4
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
(1)
Gate Quiescent Voltage
(V = 28 Vdc, I = 50 mAdc, Measured in Functional Test)
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 50 mAdc)
V
—
0.27
0.37
GS
D
Dynamic Characteristics
Input Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
30
21
25
—
—
—
pF
pF
pF
iss
rss
oss
GS
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
GS
Output Capacitance
C
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 50 mA, P = 4 W PEP, f1 = 1960 MHz,
DD
DQ
out
f2 = 1960.1 MHz, Two-Tone Test
Power Gain
G
16.5
18
33
20
—
dB
%
ps
Drain Efficiency
η
28
—
—
D
Intermodulation Distortion
Input Return Loss
IMD
IRL
-34
-12
-28
-10
dBc
dB
Typical Performances (In Freescale 900 MHz Demo Board, 50 ohm system) V = 28 Vdc, I = 50 mA, P = 4 W PEP,
DD
DQ
out
f = 900 MHz, Two-Tone Test, 100 kHz Tone Spacing
Power Gain
G
—
19
33
—
—
—
—
dB
%
ps
Drain Efficiency
η
—
—
—
D
Intermodulation Distortion
IMD
IRL
-39
-12
dBc
dB
Input Return Loss
11
1. V
=
/
10
x V . Parameter measured on Freescale Test Fixture, due to resistive divider network on the board.
GS(Q)
GG
Refer to Test Circuit Schematic.
MW6S004NT1
RF Device Data
Freescale Semiconductor
2
R1
V
SUPPLY
V
BIAS
+
R2
Z5
R3
C8
C1
C7
C3
C4
C5
Z10
RF
OUTPUT
Z6
Z7
Z8
Z9
RF
INPUT
Z1
Z2
Z3
Z4
C6
C2
DUT
Z1
Z2
Z3
Z4
Z5
Z6
0.054″ x 0.430″ Microstrip
0.054″ x 0.137″ Microstrip
0.580″ x 0.420″ Microstrip
0.580″ x 0.100″ Microstrip
0.025″ x 0.680″ Microstrip
0.210″ x 0.100″ Microstrip
Z7
Z8
Z9
Z10
PCB
0.210″ x 1.220″ Microstrip
0.054″ x 0.680″ Microstrip
0.054″ x 0.260″ Microstrip
0.025″ x 0.930″ Microstrip
Arlon CuClad 250, 0.020″, ε = 2.5
r
Figure 1. MW6S004NT1 Test Circuit Schematic
Table 6. MW6S004NT1 Test Circuit Component Designations and Values
Part
Description
100 nF Chip Capacitor (1206)
9.1 pF 600B Chip Capacitors
10 µF, 50 V Chip Capacitors
10 µF, 35 V Tantalum Chip Capacitor
1 kΩ Chip Resistor (1206)
Part Number
CDR33BX104AKWS
600B9R1CW
Manufacturer
C1
Kemet
ATC
C2, C3, C6, C7
C4, C5
C8
GRM55DR61H106KA88B
T490D106K035AS
Murata
Kemet
R1
R2
10 kΩ Chip Resistor (1206)
10 Ω Chip Resistor (1206)
R3
MW6S004NT1
RF Device Data
Freescale Semiconductor
3
25
C7
C3
C1
R1
C4
C5
R2
C8
R3
C2
C6
MW6S004N
Rev 3
Figure 2. MW6S004NT1 Test Circuit Component Layout
MW6S004NT1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
18.4
18.2
18
34
33
32
31
30
−30
η
D
17.8
17.6
17.4
17.2
17
G
ps
V
I
= 28 Vdc, P = 2 W (Avg.)
out
= 50 mA, 100 kHz Tone Spacing
DD
−8
DQ
−31
−32
−33
−34
−35
−12
−16
−20
−24
−28
IRL
16.8
16.6
16.4
IM3
1930
1940
1950
1960
1970
1980
1990
f, FREQUENCY (MHz)
Figure 3. Two-Tone Wideband Performance
@ Pout = 2 Watts Avg.
20
19
18
17
16
−10
I
= 75 mA
DQ
V
= 28 Vdc, I = 50 mA
DQ
DD
f1 = 1960 MHz, f2 = 1960.1 MHz
Two−Tone Measurements
−20
−30
−40
−50
−60
62.5 mA
50 mA
37.5 mA
3rd Order
25 mA
5th Order
V
= 28 Vdc
DD
15
14
−70
−80
f1 = 1960 MHz, f2 = 1960.1 MHz
Two−Tone Measurements
7th Order
0.01
0.1
1
10 20
0.01
0.1
1
10
P , OUTPUT POWER (WATTS) PEP
out
P , OUTPUT POWER (WATTS) PEP
out
Figure 4. Two-Tone Power Gain versus
Output Power
Figure 5. Intermodulation Distortion Products
versus Output Power
−25
−30
47
45
43
41
39
37
Ideal
P6dB = 38.73 dBm (7.465 W)
V
= 28 Vdc, P = 2 W (Avg.), I = 50 mA
out DQ
(f1 + f2)/2 = Center Frequency of 1960 MHz
DD
P3dB = 38.22 dBm (6.637 W)
−35
−40
−45
3rd Order
P1dB = 37.61 dBm (5.768 W)
Actual
5th Order
7th Order
−50
−55
−60
V
DD
= 28 Vdc, I = 50 mA
DQ
35
33
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 1960 MHz
14
16
18
20
22
24
26
0.1
1
10
100
TWO−TONE SPACING (MHz)
P , INPUT POWER (dBm)
in
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MW6S004NT1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
50
40
30
20
−20
−30
−40
−50
V
= 28 Vdc, I = 50 mA
DQ
DD
f = 1960 MHz, N−CDMA IS−95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
G
ps
ACPR
10
0
−60
−70
η
D
0.01
0.1
1
10
P , OUTPUT POWER (WATTS) AVG.
out
Figure 8. Single-Carrier CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
20
60
−30_C
T = −30_C
C
G
ps
50
40
30
20
10
0
19
18
17
16
15
14
25_C
85_C
85_C
V
DD
= 28 Vdc
= 50 mA
I
DQ
f = 1960 MHz
η
D
0.01
0.1
1
10
P , OUTPUT POWER (WATTS) CW
out
Figure 9. Power Gain and Drain Efficiency
versus CW Output Power
22
0
19
I
= 50 mA
f = 1960 MHz
DQ
18.5
−5
20
18
16
18
17.5
17
S21
−10
−15
−20
−25
16.5
16
15.5
15
V
P
= 28 Vdc
= 2 W CW
16 V
= 12 V
20 V
DD
24 V
14
12
S11
out
I
= 50 mA
1850
DQ
32 V
V
DD
28 V
0
1
2
3
4
5
6
7
8
1800
1900
1950
2000
2050
2100
f, FREQUENCY (MHz)
P , OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain versus Output Power
Figure 11. Broadband Frequency Response
MW6S004NT1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
7
6
5
4
10
10
10
10
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 12. MTTF Factor versus Junction Temperature
MW6S004NT1
RF Device Data
Freescale Semiconductor
7
f = 1990 MHz
Z
load
Z = 10 Ω
o
f = 1930 MHz
f = 1990 MHz
Z
source
f = 1930 MHz
V
DD
= 28 Vdc, I = 50 mA, P = 4 W PEP
DQ out
f
Z
Z
load
W
source
W
MHz
1930
1960
1990
1.96 - j5.34
1.89 - j5.10
1.82 - j4.85
8.78 + j6.96
8.93 + j7.46
9.11 + j7.97
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance
MW6S004NT1
RF Device Data
Freescale Semiconductor
8
Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system)
IDQ = 50 mA
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
∠ φ
|S
21
|
∠ φ
|S
12
|
∠ φ
|S |
22
∠ φ
500
550
0.649
0.695
0.733
0.770
0.800
0.827
0.848
0.866
0.882
0.895
0.907
0.916
0.923
0.929
0.935
0.938
0.942
0.945
0.948
0.951
0.953
0.954
0.955
0.956
0.957
0.957
0.958
0.959
0.959
0.960
0.959
0.959
0.958
0.958
0.957
0.957
0.955
0.954
0.953
0.953
-116.340
-121.680
-126.560
-131.340
-135.740
-140.030
-143.950
-147.690
-151.140
-154.560
-157.590
-160.540
-163.310
-165.930
-168.430
-170.770
-173.030
-175.140
-177.170
-179.090
179.030
177.270
175.570
173.980
172.350
170.800
169.340
167.920
166.510
165.200
163.800
162.420
161.170
159.840
158.560
157.160
155.870
154.510
153.120
151.730
7.902
7.502
7.111
6.699
6.302
5.922
5.552
5.220
4.891
4.597
4.315
4.060
3.819
3.601
3.398
3.210
3.036
2.875
2.728
2.590
2.464
2.347
2.240
2.139
2.047
1.958
1.879
1.806
1.736
1.668
1.611
1.555
1.504
1.456
1.412
1.372
1.334
1.300
1.268
1.238
105.420
98.790
92.380
86.290
80.450
74.850
69.630
64.580
59.970
55.490
51.240
47.170
43.340
39.650
36.110
32.740
29.490
26.360
23.330
20.440
17.640
14.920
12.320
9.740
0.056
0.053
0.049
0.045
0.041
0.038
0.035
0.032
0.029
0.026
0.024
0.022
0.020
0.018
0.017
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.008
0.007
0.007
0.006
0.006
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.005
-73.750
-80.570
-87.010
-93.280
-99.120
-104.850
-110.110
-115.220
-119.960
-124.790
-129.090
-133.370
-137.460
-141.440
-145.330
-149.540
-153.430
-157.460
-161.910
-166.180
-170.630
-174.890
179.950
173.920
167.710
161.810
155.370
148.940
142.630
136.740
129.910
123.810
118.200
112.740
108.460
103.840
99.310
0.548
0.593
0.632
0.669
0.701
0.727
0.750
0.770
0.786
0.800
0.813
0.824
0.833
0.840
0.847
0.851
0.856
0.859
0.863
0.866
0.869
0.872
0.875
0.877
0.880
0.882
0.884
0.886
0.887
0.888
0.890
0.891
0.892
0.893
0.894
0.896
0.896
0.897
0.898
0.899
-33.570
-41.480
600
-48.890
650
-56.000
700
-62.810
750
-69.290
800
-75.350
850
-81.130
900
-86.570
950
-91.730
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
-96.660
-101.340
-105.790
-110.050
-114.170
-118.060
-121.880
-125.520
-129.020
-132.390
-135.650
-138.760
-141.750
-144.650
-147.480
-150.180
-152.760
-155.230
-157.580
-160.050
-162.070
-164.190
-166.140
-168.060
-169.840
-171.610
-173.260
-174.830
-176.390
-177.840
7.250
4.810
2.440
0.260
-1.980
-4.310
-6.240
-8.290
-10.270
-12.210
-14.130
-16.010
-17.870
-19.700
-21.510
-23.250
95.360
91.030
87.460
MW6S004NT1
RF Device Data
Freescale Semiconductor
9
Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system) (continued)
IDQ = 50 mA
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
∠ φ
|S
21
|
∠ φ
|S
12
|
∠ φ
|S |
22
∠ φ
2500
2550
2600
2650
2700
2750
2800
2850
2900
2950
3000
0.952
0.950
0.949
0.948
0.944
0.944
0.943
0.941
0.940
0.938
0.937
150.340
149.010
147.380
145.920
144.200
142.790
141.020
139.410
137.640
135.900
133.860
1.211
1.187
1.166
1.144
1.121
1.105
1.088
1.073
1.058
1.045
1.032
-25.120
-26.920
-28.650
-30.420
-32.310
-34.230
-36.000
-37.870
-39.760
-41.680
-43.610
0.006
0.006
0.006
0.007
0.007
0.007
0.007
0.007
0.008
0.008
0.008
84.160
80.780
77.880
74.670
71.360
67.980
63.950
61.230
59.810
58.280
56.740
0.899
0.897
0.897
0.898
0.896
0.897
0.897
0.896
0.896
0.896
0.895
-179.270
179.420
178.120
176.840
175.480
174.060
172.930
171.630
170.330
169.040
167.510
MW6S004NT1
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
A
F
3
1
2
R
D
L
B
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
4
N
K
INCHES
MIN
MILLIMETERS
_
"
0.35 (0.89) X 45
_
DIM
A
B
C
D
E
MAX
0.265
0.235
0.072
0.150
0.026
0.044
0.070
0.063
0.180
0.285
0.255
0.240
0.008
0.063
0.210
0.012
0.012
0.021
0.010
0.010
MIN
6.48
5.72
1.65
3.30
0.53
0.66
1.27
1.14
4.06
6.93
6.22
5.84
0.00
1.40
5.08
0.15
0.15
0.00
0.00
0.00
MAX
6.73
5.97
1.83
3.81
0.66
1.12
1.78
1.60
4.57
7.24
6.48
6.10
0.20
1.60
5.33
0.31
0.31
0.53
0.25
0.25
5
0.255
0.225
0.065
0.130
0.021
0.026
0.050
0.045
0.160
0.273
0.245
0.230
0.000
0.055
0.200
0.006
0.006
10 DRAFT
_
Q
U
H
ZONE V
ZONE W
P
F
4
G
H
J
C
E
Y
Y
K
L
2
1
N
P
Q
R
S
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
U
3
ZONE V 0.000
ZONE W 0.000
ZONE X 0.000
S
G
ZONE X
CASE 466-03
ISSUE D
VIEW Y-Y
PLD 1.5
PLASTIC
MW6S004NT1
RF Device Data
Freescale Semiconductor
11
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Document Number: MW6S004N
Rev. 1, 4/2006
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