MW6S010 [FREESCALE]
RF Power Field Effect Transistor; 射频功率场效应晶体管
| 型号： | MW6S010 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistor |
| 文件： | 总16页 (文件大小：541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MW6S010
Rev. 1, 5/2005
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
MW6S010NR1
MW6S010GNR1
MW6S010MR1
MW6S010GMR1
• Typical Two-Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ
125 mA, Pout = 10 Watts PEP
Power Gain — 18 dB
=
Drain Efficiency — 32%
IMD — -37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
450-1500 MHz, 10 W, 28 V
LATERAL N-CHANNEL
BROADBAND RF POWER MOSFETs
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MW6S010NR1(MR1)
CASE 1265A-02, STYLE 1
TO-270-2 GULL
PLASTIC
MW6S010GNR1(GMR1)
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
-0.5, +68
-0.5, +12
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
61.4
0.35
W
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +175
200
°C
°C
stg
T
J
Table 2. Thermal Characteristics
(1.2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
°C/W
Case Temperature 80°C, 10 W PEP
2.85
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
1A
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
µAdc
µAdc
µAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 100 µAdc)
V
V
1.5
—
2.3
3.1
3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 125 mAdc)
—
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 0.3 Adc)
V
—
0.27
0.35
GS
D
Dynamic Characteristics
Input Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
23
10
—
—
—
pF
pF
pF
iss
GS
Output Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Reverse Transfer Capacitance
C
rss
0.32
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 125 mA, P = 10 W PEP, f = 960 MHz,
out
DD
DQ
Two-Tone Test, 100 kHz Tone Spacing
Power Gain
G
17.5
31
18
32
20.5
—
dB
%
ps
Drain Efficiency
η
D
Intermodulation Distortion
IMD
IRL
—
-37
-18
-33
-10
dBc
dB
Input Return Loss
—
Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) V = 28 Vdc, I
= 150 mA, P = 10 W PEP,
out
DD
DQ
420 MHz<Frequency<470 MHz, Two-Tone Test, 100 kHz Tone Spacing
Power Gain
G
—
—
—
—
20
33
—
—
—
—
dB
%
ps
Drain Efficiency
η
D
Intermodulation Distortion
Input Return Loss
IMD
IRL
-40
-10
dBc
dB
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
2
C11
C12
B1
V
V
BIAS
SUPPLY
+
+
+
+
+
C18
C19
C2
C4
C6
C7
C3
C15
C16
C10
C13
Z5
L1
RF
OUTPUT
DUT
R1
Z6
Z7
RF
INPUT
Z1
Z2
Z3
Z4
C20
C14
C17
C1
C5
C8
C9
Z1
Z2
Z3
Z4
0.073″ x 0.223″ Microstrip
0.112″ x 0.070″ Microstrip
0.213″ x 0.500″ Microstrip
0.313″ x 1.503″ Microstrip
Z5
Z6
Z7
0.313″ x 0.902″ Microstrip
0.073″ x 1.080″ Microstrip
0.073″ x 0.314″ Microstrip
PCB
Rogers ULTRALAM 2000, 0.031″, ε = 2.55
r
Figure 1. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Schematic — 900 MHz
Table 6. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Designations and Values — 900 MHz
Part
Description
Part Number
2743019447
Manufacturer
Fair-Rite
B1
Ferrite Bead
C1, C6, C11, C20
C2, C18, C19
C3, C16
47 pF Chip Capacitors
100B470JP500X
T491D226K035AS
13668221
ATC
22 µF, 35 V Tantalum Capacitors
220 µF, 63 V Electrolytic Capacitors, Radial
0.1 µF Chip Capacitors
Kemet
Phillips
Kemet
Johanson
ATC
C4, C15
CDR33BX104AKWS
272915L
C5, C8, C17
C7, C12
0.8-8.0 pF Variable Capacitors, Gigatrim
24 pF Chip Capacitors
100B240JP500X
100B6R8JP500X
100B7R5JP500X
A04T-5
C9, C10, C13
C14
6.8 pF Chip Capacitors
ATC
7.5 pF Chip Capacitor
ATC
L1
12.5 nH Inductor
Coilcraft
Vishay-Dale
R1
1 kΩ Chip Resistor
CRCW12061001F100
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
3
C3
C18
C7
C4
C16
C15
C10
C6
B1
C2
C11
C13
C19
C12
L1
R1
C20
C9
C1
C17
C14
C5
C8
MW6S010N
Figure 2. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Layout — 900 MHz
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS — 900 MHz
−8
48
44
40
η
D
−10
−12
−14
−16
IRL
36
32
28
24
20
16
V
= 28 Vdc, P = 10 W (Avg.)
out
= 125 mA, 100 kHz Tone Spacing
DD
I
DQ
−18
−20
−22
IMD
G
ps
−24
−26
910
920
930
940
950
960
970
f, FREQUENCY (MHz)
Figure 3. Two-Tone Wideband Performance
@ Pout = 10 Watts
20
19
−10
I
= 190 mA
125 mA
DQ
V
= 28 Vdc, I = 125 mA
DD DQ
3rd Order
5th Order
f = 945 MHz, Two−Tone Measurements
100 kHz Tone Spacing
−20
−30
−40
−50
18
17
90 mA
7th Order
V
= 28 Vdc, f = 945 MHz
16
15
DD
−60
−70
Two−Tone Measurements
100 kHz Tone Spacing
0.1
1
10
100
0.1
1
10
100
P
, OUTPUT POWER (WATTS) AVG.
out
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 4. Two-Tone Power Gain versus
Output Power
Figure 5. Intermodulation Distortion Products
versus Output Power
−15
48
46
44
42
V
I
= 28 Vdc, P = 10 W (Avg.)
out
= 125 mA, Two−Tone Measurements
DD
Ideal
−20
−25
−30
−35
−40
−45
−50
−55
DQ
P3dB = 43.14 dBm (20.61 W)
Center Frequency = 945 MHz
P1dB = 42.23 dBm (16.71 W)
3rd Order
5th Order
Actual
V
= 28 Vdc, I = 125 mA
DQ
DD
40
38
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 945 MHz
7th Order
19
21
23
25
27
29
0.1
1
10
100
TWO−TONE SPACING (MHz)
P , INPUT POWER (dBm)
in
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — 900 MHz
50
40
30
20
−10
−20
−30
−40
V
= 28 Vdc
= 125 mA
DD
I
DQ
f = 945 MHz
G
ps
η
D
10
0
−50
−60
ACPR
0.1
1
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 8. Single-Carrier CDMA ACPR, Power
Gain and Power Added Efficiency
versus Output Power
20
19
50
40
30
20
−30_C
25_C
T = −30_C
C
85_C
G
ps
η
D
25_C
85_C
18
17
16
15
V
= 28 Vdc
= 125 mA
10
0
DD
I
DQ
f = 945 MHz
0.1
1
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 9. Power Gain and Power Added
Efficiency versus Output Power
24
5
19
I
= 125 mA
f = 945 MHz
DQ
20
16
12
8
0
S21
18
17
−5
−10
−15
16
15
S11
V
P
= 28 Vdc
= 10 W CW
DD
out
28 V
32 V
4
0
−20
−25
20 V
24 V
16 V
I
= 125 mA
DQ
V
= 12 V
2
DD
0
4
6
8
10
12
14
16
500
600
700
800
900
1000
1100
1200
f, FREQUENCY (MHz)
P
, OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain versus Output Power
Figure 11. Broadband Frequency Response
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
8
7
6
5
10
10
10
10
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 12. MTTF Factor versus Junction Temperature
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
7
Z = 25 Ω
o
f = 980 MHz
f = 980 MHz
Z
source
Z
load
f = 800 MHz
f = 800 MHz
V
= 28 Vdc, I = 125 mA, P = 10 W PEP
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
800
820
840
860
880
900
920
940
960
980
3.1 + j1.9
2.8 + j1.7
10.1 + j2.3
8.3 + j2.5
8.2 + j3.3
9.8 + j4.8
10.6 + j5.6
9.5 + j5.5
10.1 + j5.9
11.0 + j6.4
11.8 + j6.6
12.1 + j7.1
2.7 + j2.2
3.1 + j3.4
3.3 + j3.8
2.9 + j3.7
2.8 + j4.4
3.0 + j4.7
3.2 + j4.9
3.6 + j5.2
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance — 900 MHz
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
8
T1
R1
V
BIAS
+
C1
R2
B1
B2
R5
V
SUPPLY
+
+
C13
C14
C15
C2
C3
C4
R3
T2
R4
R6
L1
RF
OUTPUT
DUT
Z6
Z7
Z8
RF
INPUT
Z1
Z2
Z3
Z4
Z5
C10
C12
C11
C9
C6
C5
C7
C8
Z1
Z2
Z3
0.540″ x 0.080″ Microstrip
0.365″ x 0.080″ Microstrip
0.225″ x 0.080″ Microstrip
0.440″ x 0.080″ Microstrip
Z5
Z6
Z8
0.475″ x 0.330″ Microstrip
0.475″ x 0.325″ Microstrip
1.250″ x 0.080″ Microstrip
Z4, Z7
PCB
Rogers ULTRALAM 2000, 0.030″, ε = 2.55
r
Figure 14. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Schematic — 450 MHz
Table 7. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Designations and Values — 450 MHz
Part
Description
Part Number
2743019447
Manufacturer
Fair-Rite
B1, B2
C1
Ferrite Bead
1 µF, 35 V Tantalum Capacitor
22 µF, 35 V Tantalum Capacitors
0.1 µF Chip Capacitors
330 pF Chip Capacitors
4.3 pF Chip Capacitor
T491C105K050AS
T491X226K035AS
C1210C104K5RACTR
700A331JP150X
100B4R3JP500X
27291SL
Kemet
C2, C15
C3, C14
Kemet
Kemet
C4, C9, C10, C13
ATC
C5
ATC
C6, C11
0.6-8.0 pF Variable Capacitors
4.7 pF Chip Capacitors
39 µH Chip Inductor
Johanson
ATC
C7, C8, C12
100B4R7JP500X
ISC-1210
L1
Vishay-Dale
Vishay-Dale
Vishay-Dale
Vishay-Dale
Vishay-Dale
Bourns
R1
R2
R3
R4
R5
R6
T1
T2
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistor (0805)
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
5 kΩ Potentiometer
CRCW080510R0F100
CRCW08051001F100
CRCW08051201F100
CRCW08052201F100
1224W
1 kΩ Chip Resistor (1206)
5 Volt Regulator, Micro 8
NPN Transistor
CRCW12061001F100
LP2951
Vishay-Dale
On Semiconductor
On Semiconductor
BC847ALT1
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
9
R2 R1
C1
R5
C4
T1
R3
C15
B1
B2
T2
R4
C3
C14
C2
C13
C5
C6
C12
C11
L1
C10
C9
R6
C7
C8
MW6S010N 450 MHz
Figure 15. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Layout — 450 MHz
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
10
TYPICAL CHARACTERISTICS — 450 MHz
20.4
20.2
20
37
34
G
ps
31
28
19.8
η
D
V
= 28 Vdc, P = 3 W (Avg.), I = 150 mA
out DQ
DD
25
19.6
19.4
19.2
19
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
−6
−40
−9
−45
−50
−55
ACPR
IRL
−12
−15
−18
−21
18.8
18.6
18.4
ALT1
−60
−65
400 410 420 430 440 450 460 470 480 490 500
f, FREQUENCY (MHz)
Figure 16. 2-Carrier W-CDMA Broadband Performance @ Pout = 3 Watts Avg.
19
18.8
18.5
18.3
55
50
G
ps
45
40
η
D
V
= 28 Vdc, P = 7.5 W (Avg.), I = 150 mA
out DQ
DD
35
18
17.8
17.5
17.3
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
−4
−30
−6
−35
−40
−45
ACPR
−8
IRL
−10
−12
−14
17
16.8
16.5
ALT1
−50
−55
400 410 420 430 440 450 460 470 480 490 500
f, FREQUENCY (MHz)
Figure 17. 2-Carrier W-CDMA Broadband Performance @ Pout = 7.5 Watts Avg.
30
0
−10
V
= 28 Vdc, I = 150 mA,
DQ
DD
−20
−30
−40
−50
−60
f = 450 MHz, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
25
20
15
−5
S11
S21
ACPR
−10
ALT1
ALT2
−15
−20
−25
V
P
= 28 Vdc
= 10 W
= 150 mA
DD
out
10
5
−70
−80
I
DQ
0.1
1
10
50 100 150 200 250 300 350 400 450 500 550 600 650
P
, OUTPUT POWER (WATTS) AVG.
out
f, FREQUENCY (MHz)
Figure 18. Broadband Frequency Response
Figure 19. Single-Carrier N-CDMA ACPR, ALT1
and ALT2 versus Output Power
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
11
Z = 25 Ω
o
f = 500 MHz
Z
source
f = 500 MHz
Z
load
f = 400 MHz
f = 400 MHz
V
= 28 Vdc, I = 150 mA, P = 10 W PEP
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
400
420
440
460
480
500
9.0 + j3.8
8.8 + j5.4
15.0 + j1.4
14.3 + j3.3
15.0 + j4.7
16.3 + j7.3
16.4 + j11.1
16.9 + j12.7
9.6 + j6.6
10.6 + j9.5
10.7 + j12.6
11.5 + j13.9
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
load
=
Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 20. Series Equivalent Source and Load Impedance — 450 MHz
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
12
NOTES
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
13
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
E1
B
2X
D3
2X
E4
PIN ONE ID
M
aaa
D A
NOTES:
D
M
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2X
b1
D1
aaa
D A
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
E
A
E5
E3
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
EXPOSED
HEATSINK AREA
PIN 1
PIN 2
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.98
0.99
1.02
10.57
9.60
7.37
0.41
11.07
6.04
1.68
3.81
1.47
5.87
MAX
2.08
1.09
1.07
10.77
9.70
8.13
0.61
11.28
6.15
1.88
4.57
1.68
5.97
A
A1
A2
D
.078
.039
.040
.416
.378
.290
.016
.436
.238
.066
.150
.058
.231
.082
.043
.042
.424
.382
.320
.024
.444
.242
.074
.180
.066
.235
D2
D1
D2
D3
E
E1
E2
E3
E4
E5
F
PIN 3
BOTTOM VIEW
.025 BSC
0.64 BSC
b1
c1
aaa
.193
.007
.199
.011
4.90
0.18
5.06
0.28
F
.004
0.10
ZONE J
DATUM
PLANE
c1
H
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
A1
2X
E2
E5
A2
D
NOTE 7
CASE 1265-08
ISSUE G
TO-270-2
PLASTIC
MW6S010NR1(MR1)
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
14
E1
B
2X
D3
2X
E4
PIN ONE ID
GAGE
L1
PLANE
M
aaa
C A
L
e
A1
D
M
2X
b1
D1
DETAIL Y
aaa
C A
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
E
A
M
bbb
C B
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
DETAIL Y
H
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
A
A2
7. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
2X
E2
c1
SEATING
PLANE
D
E5
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.98
0.02
1.96
10.57
9.60
7.37
0.41
8.03
6.04
1.68
3.81
1.47
5.87
4.90
MAX
2.08
0.10
2.24
10.77
9.70
8.13
0.61
8.23
6.15
1.88
4.57
1.68
5.97
5.06
A
A1
A2
D
.078
.001
.077
.416
.378
.290
.016
.316
.238
.066
.150
.058
.231
.018
.082
.004
.088
.424
.382
.320
.024
.324
.242
.074
.180
.066
.235
.024
E5
E3
EXPOSED
D1
D2
D3
E
HEATSINK AREA
PIN 1
PIN 2
E1
E2
E3
E4
E5
L
D2
L1
b1
c1
e
.01 BSC
0.25 BSC
.193
.007
.199
.011
4.90
0.18
5.06
0.28
°
°
°
°
8
2
8
2
aaa
.004
0.10
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
BOTTOM VIEW
CASE 1265A-02
ISSUE A
TO-270-2 GULL
PLASTIC
MW6S010GNR1(GMR1)
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
15
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Document Number: MW6S010
Rev. 1, 5/2005
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