MW6IC2240NBR1 [FREESCALE]
RF LDMOS Wideband Integrated Power Amplifiers; RF LDMOS宽带集成功率放大器
| 型号： | MW6IC2240NBR1 |
| 厂家： | 
Freescale |
| 描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 文件： | 总16页 (文件大小：485K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MW6IC2240N
Rev. 1, 1/2006
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2240N wideband integrated circuit is designed with on-chip
matching that makes it usable from 2110 to 2170 MHz. This multi-stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
MW6IC2240NBR1
MW6IC2240GNBR1
Final Application
2110-2170 MHz, 4.5 W AVG., 28 V
2 x W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1
=
210 mA, IDQ2 = 370 mA, Pout = 4.5 Watts Avg., Full Frequency Band
(2110-2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB
@ 0.01% Probability on CCDF.
Power Gain — 28 dB
Power Added Efficiency — 15%
IM3 @ 10 MHz Offset — -43 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -46 dBc in 3.84 MHz Bandwidth
Driver Application
CASE 1329-09
TO-272 WB-16
PLASTIC
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1
=
300 mA, IDQ2 = 320 mA, Pout = 25 dBm, Full Frequency Band (2110-
2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
Probability on CCDF.
MW6IC2240NBR1
Power Gain — 29 dB
IM3 @ 10 MHz Offset — -59 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -62 dBc in 3.84 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
Pout
.
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
MW6IC2240GNBR1
• On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
GND
V
NC
NC
NC
1
2
3
4
5
16
15
GND
NC
DS1
V
DS1
RF
V
/
RF
RF /V
out DS2
out
in
RF
6
14
in
DS2
7
8
9
10
NC
V
V
GS1
GS2
V
DS1
GND
V
V
GS1
Quiescent Current
Temperature Compensation
13
12
NC
GND
GS2
11
V
DS1
(Top View)
Note: Exposed backside flag is source
Figure 1. Functional Block Diagram
terminal for transistors.
Figure 2. Pin Connections
Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +6
-65 to +200
200
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
V
DSS
V
GS
T
stg
T
J
°C
P
in
23
dBm
Table 2. Thermal Characteristics
(1,2)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
θ
JC
°C/W
W-CDMA Application
(P = 4.5 W Avg.)
out
Stage 1, 28 Vdc, I = 210 mA
1.8
1.0
DQ
Stage 2, 28 Vdc, I = 370 mA
DQ
W-CDMA Application
Stage 1, 28 Vdc, I = 110 mA
2.0
DQ
(P = 40 W CW)
out
Stage 2, 28 Vdc, I = 370 mA
0.87
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak
Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Wideband 2110-2170 MHz Test Fixture, 50 ohm system) V = 28 Vdc, I
= 210 mA, I = 370 mA, P
DQ2 out
DD
DQ1
= 4.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel
Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @
10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
25.5
13.7
—
28
15
30
—
dB
%
ps
Power Added Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
PAE
IM3
-43
-46
-15
-40
-43
-10
dBc
dBc
dB
ACPR
IRL
—
—
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 οhm system) V = 28 Vdc, I
= 210 mA, I = 370 mA,
DQ2
DD
DQ1
2110 MHz<Frequency<2170 MHz
Video Bandwidth
VBW
MHz
(Tone Spacing from 100 kHz to VBW)
∆IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
—
30
5
—
—
Quiescent Current Accuracy over Temperature
∆I
QT
—
%
(1)
with 18 kΩ Gate Feed Resistors (-10 to 85°C)
Gain Flatness in 30 MHz Bandwidth @ P = 1 W CW
G
—
—
—
—
0.2
1
—
—
—
—
dB
°
out
F
Deviation from Linear Phase in 30 MHz Bandwidth @ P = 1 W CW
Φ
out
Delay @ P = 1 W CW Including Output Matching
Delay
2.8
9
ns
°
out
Part-to-Part Phase Variation @ P = 1 W CW
∆Φ
out
Table 6. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 οhm system) V = 28 Vdc, I
= 110 mA, I = 370 mA,
DQ2
DD
DQ1
2110 MHz<Frequency<2170 MHz
Saturated Pulsed Output Power
P
sat
—
60
—
W
(8 µsec(on), 1 msec(off))
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select
Documentation/ApplicationNotes - AN1977.
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
3
V
D2
1
2
3
4
5
DUT
16
V
D1
C4
C6
Z7
NC 15
NC
NC
NC
C13
Z9
RF
INPUT
RF
OUTPUT
C1
C2
Z4
Z5
Z6
Z8
Z1
V
Z2
Z3
14
6
C8
C9
C3
7
8
9
NC
Z10
Quiescent Current
Temperature
R1
R2
G1
Compensation
NC 13
12
10
11
C11
C10
V
G2
C5
C7
C12
Z1*
Z2*
Z3
Z4*
Z5*
Z6*
1.73″ x 0.090″ Microstrip
0.47″ x 0.090″ Microstrip
0.13″ x 0.040″ Microstrip
0.22″ x 0.315″ Microstrip
0.34″ x 0.315″ Microstrip
0.34″ x 0.090″ Microstrip
Z7*
Z8
Z9, Z10
PCB
0.94″ x 0.090″ Microstrip
0.34″ x 0.090″ Microstrip
1.00″ x 0.080″ Microstrip
Taconic TLX8-0300, 0.030″, ε = 2.55
r
* Variable for tuning
Figure 3. MW6IC2240NBR1(GNBR1) Test Circuit Schematic
Table 7. MW6IC2240NBR1(GNBR1) Test Circuit Component Designations and Values
Part
Description
1.5 pF 100B Chip Capacitors
1.8 pF 100B Chip Capacitor
6.8 pF 100B Chip Capacitors
4.7 µF Chip Capacitors (1812)
8.2 pF 100B Chip Capacitor
0.5 pF 100B Chip Capacitor
18 kW, 1/4 W Chip Resistor (1206)
8.2 kW, 1/4 W Chip Resistor (1206)
Part Number
100B1R5BW
Manufacturer
C1, C2
C3
ATC
100B1R8BW
ATC
ATC
TDK
ATC
ATC
C4, C5
100B6R8CW
C6, C7, C10, C11, C12, C13
C4532X5R1H475MT
100B8R2CW
C8
C9
R1
R2
100B0R5BW
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
4
V
D1
V
D2
C13
C4
C6
MW6IC2240, Rev. 1
C3
C9
C1
C2
C8
C10
C7
C5
C12
C11
R2
R1
V
G1
V
G2
Figure 4. MW6IC2240NBR1(GNBR1) Test Circuit Component Layout
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
35
0
V
DD
= 28 Vdc, P = 4.5 W (Avg.)
out
I
= 210 mA, I
= 370 mA
DQ1
DQ2
Two−Tone Measurements, 10 MHz Tone Spacing
30
25
20
−11
−22
−33
G
ps
IRL
PAE
15
10
−44
−55
IM3
ACPR
2050
2000
2100
2150
2200
2250
f, FREQUENCY (MHz)
Figure 5. 2-Carrier W-CDMA Wideband Performance
@ Pout = 4.5 Watts Avg.
35
−10
IRL
−20
−30
30
25
20
15
10
G
ps
V
= 28 Vdc, P = 0.6 W (Avg.)
out
DD
I
= 300 mA, I
= 320 mA
DQ1
DQ2
−40
−50
Two−Tone Measurements, 10 MHz Tone Spacing
IM3
ACPR
−60
−70
−80
5
0
PAE
2050
2100
2150
2200
2250
f, FREQUENCY (MHz)
Figure 6. 2-Carrier W-CDMA Wideband Performance
@ Pout = 0.6 Watts Avg.
31
31
I
= 530 mA
DQ2
I
= 280 mA
210 mA
DQ1
30
29
28
27
26
25
450 mA
370 mA
30
29
28
290 mA
210 mA
V
P
= 28 Vdc
= 1 W CW
= 370 mA
DD
out
140 mA
I
DQ2
V
= 28 Vdc, I = 210 mA
DQ
f1 = 2135 MHz, f2 = 2145 MHz
27
26
DD
24
23
Two−Tone Measurements, 10 MHz Tone Spacing
2000
2050
2100
2150
2200
2250
0.1
1
10
100
P , OUTPUT POWER (WATTS) PEP
out
f, FREQUENCY (MHz)
Figure 7. Two-Tone Power Gain versus
Output Power
Figure 8. Frequency Response versus Current
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
−10
−10
−20
V
I
= 28 Vdc, P = 20 W (PEP), I
= 210 mA,
DQ1
V
= 28 Vdc, I
= 210 mA, I
= 370 mA
3rd Order
DD
out
= 370 mA, Two−Tone Measurements
DD
DQ1
DQ2
−15
−20
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
DQ2
(f1 + f2)/2 = Center Frequency of 2140 MHz
3rd Order
−30
−40
−50
−60
−70
−80
5th Order
7th Order
−25
−30
−35
−40
−45
−50
5th Order
7th Order
−90
0.1
1
10
100
0.1
1
10
100
TWO−TONE SPACING (MHz)
P , OUTPUT POWER (WATTS) PEP
out
Figure 10. Intermodulation Distortion Products
versus Tone Spacing
Figure 9. Intermodulation Distortion Products
versus Output Power
55
P6dB = 48 dBm (63 W)
Ideal
53
51
49
47
45
43
41
39
P3dB = 47.5 dBm (56 W)
P1dB = 47 dBm (50 W)
Actual
V
= 28 Vdc, I
= 110 mA
DQ1
= 370 mA, Pulsed CW
DD
I
DQ2
8 µsec(on), 1 msec(off)
f = 2140 MHz
10
12 14
16 18
20
22
24 26
28
30
P , INPUT POWER (dBm)
in
Figure 11. Pulse CW Output Power versus
Input Power
40
35
−25
−30
−35
−40
−45
−50
−55
T
= −30_C
C
25_C
85_C
30
25
20
15
10
V
= 28 Vdc
= 210 mA, I = 370 mA
f1 = 2135 MHz, f2 = 2145 MHz
DD
G
ps
I
DQ1
DQ2
IM3
2−CarrierW−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR =
8.5 dB @ 0.01% Probability
(CCDF)
ACPR
5
0
−60
−65
PAE
0.1
1
10
100
P , OUTPUT POWER (WATTS) AVG.
out
Figure 12. 2-Carrier W-CDMA ACPR, IM3, Power
Gain and Power Added Efficiency
versus Output Power
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
36
32
28
60
30
29
28
27
26
25
24
I
I
= 210 mA
= 370 mA
DQ1
DQ2
−30_C
25_C
T
= −30_C
25_C
C
50
40
f = 2140 MHz
85_C
85_C
30
20
24
20
V
I
= 28 Vdc
= 210 mA, I
DD
= 370 mA
G
ps
DQ1
DQ2
f = 2140 MHz
32 V
PAE
16 V
= 12 V
24 V
10
0
16
12
20 V
28 V
50
V
DD
0
10
20
30
40
60
0.1
1
10
100
P , OUTPUT POWER (WATTS) CW
out
P , OUTPUT POWER (WATTS) CW
out
Figure 14. Power Gain versus Output Power
Figure 13. Power Gain and Power Added
Efficiency versus Output Power
1.E+09
2nd Stage
1.E+08
1.E+07
1.E+06
1st Stage
90
100 110 120 130 140 150 160 170 180 190
T , JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
J
2
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 15. MTTF Factor versus Junction Temperature
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
8
Z = 50 Ω
o
f = 2050 MHz
f = 2230 MHz
Z
in
f = 2050 MHz
f = 2230 MHz
Z
load
V
DD
= 28 Vdc, I
= 210 mA, I = 370 mA, P = 4.5 W Avg.
DQ2 out
DQ1
f
Z
in
Z
load
MHz
Ω
Ω
2050
2080
2110
33.723 + j3.048
38.052 + j8.201
45.972 + j12.306
7.971 - j5.705
7.559 - j5.532
7.117 - j5.345
59.075 + 9.272
68.368 - j3.227
67.177 - j19.071
58.213 - j28.879
2140
2170
2200
2230
6.642 - j5.119
6.132 - j4.891
5.626 - j4.619
5.118 - j4.305
Z
=
=
Device input impedance as measured from
gate to ground.
in
Z
load
Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
Z
in
load
Figure 16. Series Equivalent Input and Load Impedance
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
9
Table 8. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system)
IDQ1 = 210 mA, IDQ2 = 370 mA
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
∠ φ
|S
21
|
∠ φ
|S
12
|
∠ φ
|S |
22
∠ φ
1000
1200
1400
0.788
0.713
0.584
131.360
113.326
86.885
0.0013
0.0012
0.0007
63.602
42.219
55.210
0.0020
0.0094
0.1180
25.353
10.742
-39.325
0.9940
0.9910
0.9850
172.664
169.954
166.452
1600
1800
2000
2200
2400
2600
2800
3000
0.389
0.239
0.221
0.216
0.467
0.539
0.635
0.716
41.593
-54.753
-162.180
-38.746
-113.440
-153.020
-171.630
169.263
0.0006
0.0022
0.0036
0.0057
0.0043
0.0044
0.0044
0.0049
117.726
122.409
118.178
68.626
64.758
48.498
52.829
56.398
0.6690
4.9300
21.396
19.739
7.8281
3.8868
2.4331
1.6119
-92.822
-164.584
49.432
0.9780
0.9310
0.6120
0.7530
0.9010
0.9350
0.9480
0.9570
161.752
152.388
151.441
-177.800
171.868
167.252
164.137
161.593
-105.946
166.887
113.310
69.460
29.135
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
10
NOTES
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
11
NOTES
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
12
NOTES
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
2X r1
A
NOTE 6
M
aaa
C A B
E1
B
PIN ONE
INDEX
4X b1
M
aaa
C A
6X
e1
4X
e2
2X
e3
e
D
D1
M
b3
M
aaa
C A
b2
M
aaa
C A
10X b
M
aaa
C A
N
E
VIEW Y-Y
DATUM
PLANE
H
A
c1
F
SEATING
PLANE
C
ZONE "J"
A1
Y
Y
E2
A2
7
INCHES
DIM MIN MAX
MILLIMETERS
MIN
2.54
0.96
1.02
23.57
MAX
2.64
1.12
1.07
23.67
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1"
DO INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE .005 (0.13)
TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3"
DIMENSIONS AT MAXIMUM MATERIAL CONDITION.
6. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SLUG.
A
A1
A2
D
.100
.038
.040
.928
.104
.044
.042
.932
.810 BSC
20.57 BSC
D1
E
.551
.353
.346
.559
.357
.350
14.00
8.97
8.79
14.20
9.07
8.89
E1
E2
F
.025 BSC
0.64 BSC
M
.600
.270
.011
.037
.037
.225
.007
−−−
−−−
15.24
6.86
0.28
0.94
0.94
5.72
.18
−−−
−−−
0.43
1.09
1.09
5.87
.28
N
b
.017
.043
.043
.231
.011
b1
b2
b3
c1
e
.054 BSC
1.37 BSC
.040 BSC
.224 BSC
.150 BSC
1.02 BSC
5.69 BSC
3.81 BSC
e1
e2
e3
r1
aaa
7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
.063
.068
1.6
1.73
.004
.10
CASE 1329-09
ISSUE K
TO-272 WB-16
PLASTIC
MW6IC2240NBR1
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
14
A
E1
B
2X r1
M
aaa
C A B
4X b1
PIN ONE
INDEX
M
aaa
C A
NOTE 6
6X
e1
4X
e2
2X
e3
b3
aaa
e
D
M
D1
M
C A
b2
C A
M
aaa
10X b
M
aaa
C A
N
E2
E
VIEW Y-Y
DETAIL Y
DATUM
PLANE
H
A2
A
INCHES
MILLIMETERS
E2
c1
DIM MIN
MAX
.104
.004
.110
.932
MIN
2.54
0.02
2.51
23.57
MAX
2.64
0.10
2.79
23.67
Y
Y
SEATING
PLANE
A
A1
A2
D
.100
.001
.099
.928
C
D1
E
.810 BSC
20.57 BSC
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1"
DO INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE .005 (0.13)
TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3"
DIMENSIONS AT MAXIMUM MATERIAL CONDITION.
6. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SINK.
.429
.353
.346
.018
.437
.357
.350
.024
10.90
8.97
8.79
4.90
11.10
9.07
8.89
5.06
E1
E2
L
L1
M
.01 BSC
0.25 BSC
.600
.270
.011
.037
.037
.225
.007
−−−
−−−
15.24
6.86
0.28
0.94
0.94
5.72
.18
−−−
−−−
0.43
1.09
1.09
5.87
.28
GAGE
N
L1
PLANE
b
.017
.043
.043
.231
.011
b1
b2
b3
c1
e
L
.054 BSC
1.37 BSC
t
A1
e1
e2
e3
r1
t
.040 BSC
.224 BSC
.150 BSC
1.02 BSC
5.69 BSC
3.81 BSC
DETAIL Y
.063
°
.068
8
1.6
°
1.73
°
8
°
2
2
aaa
.004
.10
CASE 1329A-03
ISSUE D
TO-272 WB-16 GULL
PLASTIC
MW6IC2240GNBR1
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
15
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Document Number: MW6IC2240N
Rev. 1, 1/2006
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