MW6IC2420NBR1 [FREESCALE]
RF LDMOS Integrated Power Amplifier; RF LDMOS集成功率放大器
| 型号： | MW6IC2420NBR1 |
| 厂家： | 
Freescale |
| 描述： | RF LDMOS Integrated Power Amplifier |
| 文件： | 总12页 (文件大小：484K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MW6IC2420N
Rev. 0, 3/2007
Freescale Semiconductor
Technical Data
RF LDMOS Integrated
Power Amplifier
The MW6IC2420NB integrated circuit is designed with on-chip matching
that makes it usable at 2450 MHz. This multi-stage structure is rated for 26 to
32 Volt operation and covers all typical industrial, scientific and medical
modulation formats.
MW6IC2420NBR1
2450 MHz, 20 W, 28 V
CW
RF LDMOS INTEGRATED POWER
AMPLIFIER
Driver Applications
• Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ1 = 210 mA,
IDQ2 = 370 mA, Pout = 20 Watts
Power Gain — 19.5 dB
Power Added Efficiency — 27%
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW
Pout
.
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
CASE 1329-09
TO-272 WB-16
PLASTIC
with Enable/Disable Function
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
GND
V
NC
NC
NC
1
2
3
4
5
16
15
GND
NC
DS1
V
DS1
RF
V
/
RF
RF /V
out DS2
out
in
RF
6
14
in
DS2
7
8
9
10
NC
V
V
GS1
GS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
13
12
NC
GND
V
GND
DS1
11
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
© Freescale Semiconductor, Inc., 2007. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +6
-65 to +200
200
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
V
DSS
V
GS
T
stg
T
°C
J
P
23
dBm
in
Table 2. Thermal Characteristics
(1)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
°C/W
W-CDMA Application
(P = 4.5 W Avg.)
out
Stage 1, 28 Vdc, I = 210 mA
1.8
1
DQ
Stage 2, 28 Vdc, I = 370 mA
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak
Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
= 210 mA, I = 370 mA,
DQ2
Max
Unit
Functional Tests (In Freescale Wideband 2110-2170 MHz Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
DQ1
P
= 4.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel
out
Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @
10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
25.5
13.7
—
28
30
—
dB
%
ps
Power Added Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
PAE
IM3
15
-43
-46
-15
-40
-43
-10
dBc
dBc
dB
ACPR
IRL
—
—
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
= 210 mA, I = 370 mA, 2110-2170 MHz
DQ2
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
DQ1
Video Bandwidth @ 20 W PEP P where IM3 = -30 dBc
VBW
MHz
out
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
—
—
30
5
—
—
Quiescent Current Accuracy over Temperature
ΔI
%
QT
(1)
with 18 kΩ Gate Feed Resistors (-10 to 85°C)
Gain Flatness in 30 MHz Bandwidth @ P = 1 W CW
G
—
—
0.2
2
—
—
dB
out
F
Average Deviation from Linear Phase in 30 MHz Bandwidth
Φ
°
@ P = 1 W CW
out
Average Group Delay @ P = 1 W CW Including Output Matching
Delay
—
—
2.8
18
—
—
ns
out
Part-to-Part Insertion Phase Variation @ P = 1 W CW,
ΔΦ
°
out
Six Sigma Window
Table 6. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 110 mA, I = 370 mA, 2110-2170 MHz
DQ2
DD
DQ1
Saturated Pulsed Output Power
P
—
60
—
W
sat
(8 μsec(on), 1 msec(off))
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1977.
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
3
V
DS2
1
2
3
4
5
DUT
16
C2
C11
V
DS1
NC 15
NC
NC
C1
Z3
Z10
Z5
RF
INPUT
RF
OUTPUT
Z1
Z2
Z4
C6 Z6
Z7
Z8
Z9
14
6
C8
C14
C15
7
8
NC
C7
C9
C10
Z11
Quiescent Current
Temperature
Compensation
9
V
GS1
NC 13
12
10
11
NC
NC
C5
R1
V
GS
C4
C12
C3
V
C13
R2
GS2
Z1
Z2
Z3, Z8
Z4
0.510″ x 0.054″ Microstrip
0.300″ x 0.054″ Microstrip
0.410″ x 0.054″ Microstrip
0.138″ x 0.237″ Microstrip
0.086″ x 0.237″ Microstrip
Z6
Z7
Z9
Z10, Z11
PCB
0.189″ x 0.237″ Microstrip
0.127″ x 0.054″ Microstrip
0.182″ x 0.054″ Microstrip
1.073″ x 0.054″ Microstrip
Z5
Taconic RF35, 0.020″, ε = 3.5
r
Figure 3. MW6IC2420NBR1 Test Circuit Schematic — 2450 MHz
Table 7. MW6IC2420NBR1 Test Circuit Component Designations and Values
Part
Description
Part Number
C32225X5R1H225MT
C1206C104K1KAC
08051J0R5BS
Manufacturer
C1, C2, C3, C4
2.2 μF Chip Capacitors
TDK
Kemet
AVX
C5, C13
C6, C7
C8
100 nF Chip Capacitors
0.5 pF Chip Capacitors
6.8 pF Chip Capacitor
08051J6R8BS
AVX
C9
2.2 pF Chip Capacitor
08051J2R2BS
AVX
C10
1 pF Chip Capacitor
08051J1R0BS
AVX
C11, C12
C14
5.6 pF Chip Capacitors
0.3 pF Chip Capacitor
08051J5R6BS
AVX
ATC100B0R3BT500XT
ATC100B0R5BT500XT
3224W-1-502E
ATC
C15
0.5 pF Chip Capacitor
ATC
R1, R2
5 kΩ Potentiometer CMS Cermet Multi-turn
Bourns
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
4
V
V
DS2
DS1
C2
C11
C1
MW6IC2420
Rev. 0
C9
C10
C6
C7
C8
C14
C15
C13
C5
C4
C12
C3
R1
R2
V
GS
Figure 4. MW6IC2420NBR1 Test Circuit Component Layout — 2450 MHz
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — 2450 MHz
24
40
35
30
25
V
= 32 V
30 V
DD
23
22
21
28 V
G
ps
20
15
20
19
PAE
28 V
32 V 30 V
10
18
17
16
I
I
= 210 mA
= 370 mA
DQ1
DQ2
5
0
f = 2450 MHz
1
10
, OUTPUT POWER (WATTS) CW
50
P
out
Figure 5. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of VDD
22
21.5
21
40
35
30
25
G
ps
20.5
20
15
20
19.5
V
= 28 V
= 210 mA
= 370 mA
DD
DQ1
DQ2
10
19
18.5
18
I
I
5
0
PAE
f = 2450 MHz
0.5
1
10
50
P
, OUTPUT POWER (WATTS) CW
out
Figure 6. Power Gain and Power Added
Efficiency versus CW Output Power
9
24
23
22
21
20
19
18
17
16
10
8
10
I
= 620 mA
DQ
1st Stage
580 mA
7
10
540 mA
6
10
2nd Stage
5
G
10
10
ps
V
= 28 V
f = 2450 MHz
DD
4
0.5
1
10
, OUTPUT POWER (WATTS) CW
50
90
110
130
150
170
190
210
230
250
P
T , JUNCTION TEMPERATURE (°C)
J
out
This above graph displays calculated MTTF in hours when the device
is operated at V = 28 Vdc, P = 20 W Avg., and PAE = 27%.
Figure 7. Power Gain and Power Added
Efficiency versus CW Output Power as a
Function of Total IDQ
DD
out
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 8. MTTF versus Junction Temperature
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
6
Z = 50 Ω
o
Z
load
Z
source
f = 2450 MHz
f = 2450 MHz
V
= 28 Vdc, I
= 210 mA, I = 370 mA, P = 20 W CW
DQ2 out
DD
DQ1
f
Z
Z
load
W
source
W
MHz
2450
54.8 + j16.6
0.42 + j4.3
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
load
=
Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 9. Series Equivalent Source and Load Impedance
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
8
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
9
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
10
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2007
• Initial Release of Data Sheet
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
11
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Document Number: MW6IC2420N
Rev. 0, 3/2007
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