MW6IC2420NBR1_08 [FREESCALE]
RF LDMOS Integrated Power Amplifier; RF LDMOS集成功率放大器型号: | MW6IC2420NBR1_08 |
厂家: | Freescale |
描述: | RF LDMOS Integrated Power Amplifier |
文件: | 总12页 (文件大小:488K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Document Number: MW6IC2420N
Rev. 1, 4/2008
Freescale Semiconductor
Technical Data
RF LDMOS Integrated
Power Amplifier
The MW6IC2420NB integrated circuit is designed with on-chip matching
that makes it usable at 2450 MHz. This multi-stage structure is rated for 26 to
32 Volt operation and covers all typical industrial, scientific and medical
modulation formats.
MW6IC2420NBR1
2450 MHz, 20 W, 28 V
CW
RF LDMOS INTEGRATED POWER
AMPLIFIER
Driver Applications
• Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ1 = 210 mA,
IDQ2 = 370 mA, Pout = 20 Watts
Power Gain — 19.5 dB
Power Added Efficiency — 27%
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW
Pout
.
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
CASE 1329-09
TO-272 WB-16
PLASTIC
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
GND
V
NC
NC
NC
1
2
3
4
5
16
15
GND
NC
DS1
V
DS1
RF
V
/
out
RF
6
14
in
RF
RF /V
out DS2
DS2
in
7
8
9
10
NC
V
V
GS1
GS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
13
12
NC
GND
V
GND
DS1
(1)
11
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +68
-0.5, +6
-65 to +200
150
Unit
Vdc
Vdc
°C
Drain-Source Voltage
V
DSS
Gate-Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
T
stg
T
°C
C
(1,2)
T
225
°C
J
P
23
dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
°C/W
W-CDMA Application
(P = 4.5 W Avg.)
out
Stage 1, 28 Vdc, I = 210 mA
1.8
1
DQ
Stage 2, 28 Vdc, I = 370 mA
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak
Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
= 210 mA, I = 370 mA,
DQ2
Max
Unit
Functional Tests (In Freescale Wideband 2110-2170 MHz Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
DQ1
P
= 4.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel
out
Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @
10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
25.5
13.7
—
28
30
—
dB
%
ps
Power Added Efficiency
PAE
IM3
15
Intermodulation Distortion
-43
-46
-15
-40
-43
-10
dBc
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
—
dBc
—
dB
1. Continuous use at maximum temperature will affect MTTF.
(continued)
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
= 210 mA, I = 370 mA, 2110-2170 MHz
DQ2
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
DQ1
Video Bandwidth @ 20 W PEP P where IM3 = -30 dBc
VBW
MHz
out
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
—
—
30
5
—
—
Quiescent Current Accuracy over Temperature
ΔI
%
QT
(1)
with 18 kΩ Gate Feed Resistors (-10 to 85°C)
Gain Flatness in 30 MHz Bandwidth @ P = 1 W CW
G
—
—
0.2
2
—
—
dB
out
F
Average Deviation from Linear Phase in 30 MHz Bandwidth
Φ
°
@ P = 1 W CW
out
Average Group Delay @ P = 1 W CW Including Output Matching
Delay
—
—
2.8
18
—
—
ns
out
Part-to-Part Insertion Phase Variation @ P = 1 W CW,
ΔΦ
°
out
Six Sigma Window
Table 6. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 110 mA, I = 370 mA, 2110-2170 MHz
DQ2
DD
DQ1
Saturated Pulsed Output Power
P
—
60
—
W
sat
(8 μsec(on), 1 msec(off))
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
3
V
DS2
1
2
3
4
5
DUT
16
C2
C11
V
DS1
NC 15
NC
NC
C1
Z3
Z10
Z5
RF
INPUT
RF
OUTPUT
Z1
Z2
Z4
C6 Z6
Z7
Z8
Z9
14
6
C8
C14
C15
7
8
NC
C7
C9
C10
Z11
Quiescent Current
Temperature
Compensation
9
V
GS1
NC 13
12
10
11
NC
NC
C5
R1
V
GS
C4
C12
C3
V
C13
R2
GS2
Z1
Z2
Z3, Z8
Z4
0.510″ x 0.054″ Microstrip
0.300″ x 0.054″ Microstrip
0.410″ x 0.054″ Microstrip
0.138″ x 0.237″ Microstrip
0.086″ x 0.237″ Microstrip
Z6
Z7
Z9
Z10, Z11
PCB
0.189″ x 0.237″ Microstrip
0.127″ x 0.054″ Microstrip
0.182″ x 0.054″ Microstrip
1.073″ x 0.054″ Microstrip
Z5
Taconic RF35, 0.020″, ε = 3.5
r
Figure 3. MW6IC2420NBR1 Test Circuit Schematic — 2450 MHz
Table 7. MW6IC2420NBR1 Test Circuit Component Designations and Values
Part
Description
Part Number
C32225X5R1H225MT
C1206C104K1KAC
08051J0R5BS
Manufacturer
C1, C2, C3, C4
2.2 μF Chip Capacitors
TDK
Kemet
AVX
C5, C13
C6, C7
C8
100 nF Chip Capacitors
0.5 pF Chip Capacitors
6.8 pF Chip Capacitor
08051J6R8BS
AVX
C9
2.2 pF Chip Capacitor
08051J2R2BS
AVX
C10
1 pF Chip Capacitor
08051J1R0BS
AVX
C11, C12
C14
5.6 pF Chip Capacitors
0.3 pF Chip Capacitor
08051J5R6BS
AVX
ATC100B0R3BT500XT
ATC100B0R5BT500XT
3224W-1-502E
ATC
C15
0.5 pF Chip Capacitor
ATC
R1, R2
5 kΩ Potentiometer CMS Cermet Multi-turn
Bourns
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
4
V
V
DS2
DS1
C2
C11
C1
MW6IC2420
Rev. 0
C9
C10
C6
C7
C8
C14
C15
C13
C5
C4
C12
C3
R1
R2
V
GS
Figure 4. MW6IC2420NBR1 Test Circuit Component Layout — 2450 MHz
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — 2450 MHz
24
40
35
30
25
V
= 32 V
30 V
DD
23
22
21
28 V
G
ps
20
15
20
19
PAE
28 V
32 V 30 V
10
18
17
16
I
I
= 210 mA
= 370 mA
DQ1
DQ2
5
0
f = 2450 MHz
1
10
, OUTPUT POWER (WATTS) CW
50
P
out
Figure 5. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of VDD
22
21.5
21
40
35
30
25
G
ps
20.5
20
15
20
19.5
V
= 28 V
= 210 mA
= 370 mA
DD
DQ1
DQ2
10
19
18.5
18
I
I
5
0
PAE
f = 2450 MHz
0.5
1
10
50
P
, OUTPUT POWER (WATTS) CW
out
Figure 6. Power Gain and Power Added
Efficiency versus CW Output Power
9
24
23
22
21
20
19
18
17
16
10
8
10
I
= 620 mA
DQ
1st Stage
580 mA
7
10
540 mA
6
10
2nd Stage
5
G
10
10
ps
V
= 28 V
f = 2450 MHz
DD
4
0.5
1
10
, OUTPUT POWER (WATTS) CW
50
90
110
130
150
170
190
210
230
250
P
T , JUNCTION TEMPERATURE (°C)
J
out
This above graph displays calculated MTTF in hours when the device
is operated at V = 28 Vdc, P = 20 W Avg., and PAE = 27%.
Figure 7. Power Gain and Power Added
Efficiency versus CW Output Power as a
Function of Total IDQ
DD
out
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 8. MTTF versus Junction Temperature
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
6
Z = 50 Ω
o
Z
load
Z
source
f = 2450 MHz
f = 2450 MHz
V
= 28 Vdc, I
= 210 mA, I = 370 mA, P = 20 W CW
DQ2 out
DD
DQ1
f
Z
Z
load
W
source
W
MHz
2450
54.8 + j16.6
0.42 + j4.3
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
load
=
Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 9. Series Equivalent Source and Load Impedance
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
8
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
9
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
10
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Mar. 2007
Apr. 2008
•
Initial Release of Data Sheet
•
•
Changed 220°C to 225°C in Capable Plastic Package bullet, p. 1
Added Footnote 1 to Quiescent Current Temperature bullet under Features section and to callout in Fig. 1,
Functional Block Diagram, p. 1
•
•
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 2
•
Replaced Case Outline 1329-09, Issue L, with 1329-09, Issue M, p. 8-10. Added pin numbers 1 through
17.
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
11
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
+1-800-521-6274 or +1-480-768-2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Semiconductor was negligent regarding the design or manufacture of the part.
Denver, Colorado 80217
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
ꢀ Freescale Semiconductor, Inc. 2007-2008. All rights reserved.
1-800-441-2447 or 303-675-2140
Fax: 303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MW6IC2420N
Rev. 1, 4/2008
相关型号:
MW6S010NR1_09
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
MW7IC008NT1_11
RF LDMOS Wideband Integrated Power Amplifier Stable into a 5:1 VSWR. All Spurs Below --60 dBc
FREESCALE
©2020 ICPDF网 联系我们和版权申明