CNZ1110R [PANASONIC]
Transistor Output Slotted Switch, 1-Channel, 2.8mm Slot Width, PISTR104-009, 4 PIN;
| 型号： | CNZ1110R |
| 厂家： | 
PANASONIC |
| 描述： | Transistor Output Slotted Switch, 1-Channel, 2.8mm Slot Width, PISTR104-009, 4 PIN 输出元件 光电 |
| 文件： | 总3页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transmissive Photosensors (Photo lnterrupters)
CNZ1110 (ON1110)
Photo Interrupter
Unit: mm
Mark for Indicating
LED side
For contactless SW, object detection
A - A'
Cross section
2.8±±.2
13.8±±.3
■ Overview
6
±±.2
CNZ1110 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detectin
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
±.4±±.1
A
±.5
±.7
■ Features
• Highly precise position detection: 0.3 mm
• Fast response tr , tf = 6 µs (typ.)
• Small output current variation against chage itemprature
• Small package used for saving mounting spac
■ Absolute Maximum Ratings Ta = 25°
(3)
(4)
(2.54)
1: Anode
2: Cathode
3: Collector
4: Emitter
(1)
(1±)
PISTR104-009 Package
Parameter
Symbol Rating
Unit
V
Internal Connection
Reverse voltage
R
IF
3
Input (Light
emitting diode) Forward urent
Power dissipion *
0
75
0
mA
mW
V
2
3
4
PD
Output (Photo Collctor-emitter ltage VCO
transistor)
(Baopen)
1
Emittercollector voltag
(Basopen)
5
V
lector curren
ollector power disspation *
20
100
mA
mW
°C
Note) 1: Input power derating ratio is 1.0 mW/°C at
*
2
PC
Ta ≥ 25°C.
Temperatre Operating mbient temperature Topr
Storage teperatu
−25 to +85
2: Output power derating ratio is 1.33 mW/°C
at Ta ≥ 25°C.
*
Tstg −30 to +100
°C
■ Electrtical Characteristics Ta = 25°C 3°C
Symbol
VF
Conditions
Min
Typ
Max
1.5
10
Unit
V
Input
Fltage
IF = 50 mA
VR = 3 V
1.2
characteristics Revee current
Terminal capacitance
IR
µA
pF
Ct
VR = 0 V, f = 1 MHz
VCE = 10 V
50
5
Output
Collector-emitter cutoff current
ICEO
200
nA
characteristics (Base open)
Collector-emitter capacitance
CC
IC
VCE = 10 V, f = 1 MHz
VCE = 1V, IF = 20 mA
pF
mA
V
2
Transfer
Collector current *
0.3
characteristics
Collector-emitter saturation voltage VCE(sat) IF = 50 mA, IC = 0.1 mA
0.3
1
Rise time *
tr
tf
VCC = 10 V, IC = 1 mA, RL = 100 Ω
6
6
µs
1
Fall time *
µs
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
Sig. in
VCC
td: Delay time
tr: Rise time
tf: Fall time
(Input pulse)
90%
10%
(Output pulse)
Sig. out
td
3. 1: Switching time measurement circuit
*
RL
tr
tf
50 Ω
2: Rank classification
*
Rank
Q
R
S
IC (mA)
0.30 to 0.85
0.75 to 2.15
> 1.85
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00030BED
1
CNZ1110
IF , IC Ta
IF VF
IC IF
60
60
50
40
30
20
10
0
102
10
VCE = 10 V
Ta = 25°C
Ta = 25°C
IF
50
40
30
1
IC
20
−1
10
0
−25
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
1
10
102
103
Ambient temperature Ta (°C )
Forwrd voltage VF (V)
Forward current IF (mA)
VF Ta
IC VCE
∆IC Ta
1.6
102
10
160
120
80
40
0
VCE = 10 V
IF = 20 mA
Ta = 25°C
50 mA
1.2
0.8
0
IF 30 mA
1mA
20 mA
1
10 mA
10−1
10−2
10−1
−40
40
8
1
10
102
−
0
40
80
eratue Ta (°C )
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C )
Ta
tr IC
∆IC d
10
1
103
102
100
VCC = 10 V
Ta 25°C
VCE = 10 V
Ta = 25°C
IF = 20 mA
80
60
40
20
0
Criterion
0
d
VCE = 24 V
10 V
10−1
10−2
10−3
10−4
RL = kΩ
500 Ω
10
1
100 Ω
Sig.IN
VCC
Sig.
V1
V2
90%
10%
OUT
V1
50 Ω
V2
td
RL
tr
1
tf
10−1
−40
0
40
80
10−2
10−1
10
0
1
2
3
4
5
6
Ambient temperature Ta (°C )
Collector current IC (mA)
Distance d (mm)
SHG00030BED
2
Caution for Safety
¢ This product contains Gallium Arsenide (GaAs).
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
product. Follow related laws and ordinances for disposal. The product
should be excluded from general industrial waste or household garbage.
DANGER
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