CNZ1120(ON1120) [ETC]
Opto-Electronic Device - Photocouplers·Photosensors - Transmissive Photosensors ; 光电器件 - 光电·光敏 - 透射式光敏
| 型号： | CNZ1120(ON1120) |
| 厂家： | 
ETC |
| 描述： | Opto-Electronic Device - Photocouplers·Photosensors - Transmissive Photosensors
|
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transmissive Photosensors (Photo Interrupters)
CNZ1120 (ON1120)
Photo Interrupter
Unit : mm
For contactless SW, object detection
Overview
CNZ1120 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
19.0±0.35
6.2±0.25
10.0±0.3
A
2-C0.5
Features
2-0.45
A'
(15.5)
(2.54)
Wide gap between emitting and detecting elements, suitable for
SEC. A-A'
thick plate detection
Gap : 10mm
2
1
3
Fast response : tr, tf = 6 µs (typ.)
2
1
3
4
The external case is molded using visible light cutoff resin. The
case has no openings, so the photosensor is not easily susceptible
to output attenuation resulting from dust or particles
4
Pin connection
(Note) ( ) Dimension is reference
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
VR
IF
3
50
75
20
20
5
V
mA
mW
mA
V
Input (Light
emitting diode)
*1
PD
IC
Collector to emitter voltage VCEO
Output (Photo
transistor)
Emitter to collector voltage VECO
V
*1 Input power derating ratio is
*2
Collector power dissipation PC
100
mW
1.0 mW/˚C at Ta ≥ 25˚C.
Operating ambient temperature
Storage temperature
Topr –5 to +60 ˚C
*2 Output power derating ratio is
Temperature
Tstg –15 to +65
˚C
1.33 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Forward voltage (DC)
Reverse current (DC)
Collector cutoff current
Collector to emitter capacitance
Collector current
VF IF = 50mA
1.2
1.5
10
V
Input
characteristics
IR VR = 3V
µA
nA
pF
ICEO VCE = 10V, IF = 0mA, ID = 0mA*1
CC VCE = 10V, f = 1MHz
200
Output
characteristics
5
6
IC
VCE = 10V, IF = 20mA, RL = 100Ω
1.0
mA
µs
V
Transfer
Response time
tr , tf*2 VCC = 10V, IC = 1mA, RL = 100Ω
characteristics
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
0.4
*1 ID : Leakage current due to scattered light
*2 Switching time measurement circuit
Sig.IN
VCC
td : Delay time
(Input pulse)
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
90%
10%
Sig.OUT
(Output pulse)
td
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
50Ω
RL
tr
tf
Note) The part number in the parenthesis shows conventional part number.
1
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
DANGER
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
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(3) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household ap-
pliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
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• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without notice for
reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the prod-
ucts, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifi-
cations satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the
range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for
any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended, so that
such equipment may not violate relevant laws or regulations because of the function of our products.
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Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconduc-
tor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available product
types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information before
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the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any
liability for any damages arising from any errors etc. that may appear in this material.
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2001 MAR
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