CNZ1179(ON1179) [ETC]
光デバイス － フォトカプラ?フォトセンサ － 透過形フォトセンサ ;
| 型号： | CNZ1179(ON1179) |
| 厂家： | 
ETC |
| 描述： | 光デバイス － フォトカプラ?フォトセンサ － 透過形フォトセンサ |
| 文件： | 总3页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transmissive Photosensors (Photo Interrupters)
CNZ1179 (ON1179)
Photo Interrupter
Unit : mm
For contactless SW, object detection
Overview
Mark for indicating
LED side
CNZ1179 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
13.0±0.3
6.2±0.2
5.0±0.2
0.45±0.1
2-R0.5
2-0.45
Features
Highly precise position detection : 0.3 mm
*9.75±0.3
*2.54±0.3
2
3
Wide gap between emitting and detecting elements, suitable for
thick plate detection
2
1
3
4
1
4
Fast response : tr, tf = 6 µs (typ.)
Pin connection
Small output current variation against change in temperature
(Note) * is dimension at the root of leads
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
VR
IF
3
50
75
20
30
5
V
mA
mW
mA
V
Input (Light
emitting diode)
*1
PD
IC
Collector to emitter voltage VCEO
Output (Photo
transistor)
Emitter to collector voltage VECO
V
*1 Input power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
*2
Collector power dissipation PC
100
mW
Operating ambient temperature
Storage temperature
Topr –25 to +85 ˚C
Tstg –30 to +100 ˚C
Temperature
1.33 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Forward voltage (DC)
Reverse current (DC)
Collector cutoff current
Collector to emitter capacitance
Collector current
VF IF = 50mA
1.2
1.5
10
V
µA
nA
pF
mA
µs
Input
characteristics
IR VR = 3V
ICEO VCE = 10V
200
Output
characteristics
CC VCE = 10V, f = 1MHz
IC VCE = 10V, IF = 20mA, RL = 100Ω
tr , tf* VCC = 10V, IC = 1mA, RL = 100Ω
5
6
0.3
Transfer
Response time
characteristics
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
0.3
V
* Switching time measurement circuit
Sig.IN
VCC
td : Delay time
(Input pulse)
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
90%
10%
Sig.OUT
(Output pulse)
td
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
50Ω
RL
tr
tf
Note) The part number in the parenthesis shows conventional part number.
1
CNZ1179
Transmissive Photosensors (Photo Interrupters)
IF , IC — Ta
IF — VF
IC — IF
60
60
50
40
30
20
10
0
10
1
Ta = 25˚C
VCE = 10V
Ta = 25˚C
IF
50
40
30
10 –1
IC
20
10 –2
10
0
10 –3
10 –1
– 25
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
2.4
1
10
10 2
Ambient temperature Ta (˚C )
Forward voltage VF (V)
Forward current IF (mA)
VF — Ta
IC — VCE
IC — Ta
1.6
10 2
10
160
120
80
40
0
Ta = 25˚C
VCE = 10V
IF = 20mA
IF = 50mA
10mA
1.2
0.8
0.4
0
IF = 30mA
20mA
1mA
1
10mA
10 –1
10 –2
10 –1
– 40 – 20
0
20
40
60
80 100
1
10
10 2
– 40 – 20
0
20
40
60
80 100
Ambient temperature Ta (˚C )
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C )
ICEO — Ta
tr — IC
IC — d
10
1
10 3
10 2
100
80
60
40
20
0
VCC = 10V
Ta = 25˚C
VCE = 10V
Ta = 25˚C
IF = 20mA
Criterion
0
d
VCE = 24V
10V
RL = 1kΩ
500Ω
10 –1
10 –2
10 –3
10 –4
10
1
Sig.IN
VCC
Sig.
V1
V2
90%
10%
OUT
V1
50Ω
V2
td
RL
tr
1
tf
10 –1
– 40 – 20
0
20
40
60
80 100
10 –2
10 –1
10
0
1
2
3
4
5
6
Ambient temperature Ta (˚C )
Collector current IC (mA)
Distance d (mm)
2
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
DANGER
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
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applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
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equipment (such as office equipment, communications equipment, measuring instruments and household ap-
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reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the prod-
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2001 MAR
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