CNZ1111 [PANASONIC]
Photo Interrupters; 光遮断器
| 型号： | CNZ1111 |
| 厂家： | 
PANASONIC |
| 描述： | Photo Interrupters |
| 文件： | 总3页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transmissive Photosensors (Photo Interrupters)
CNZ1111,CNZ1112
Photo Interrupters
Unit : mm
CNZ1111
0.45±0.1
For contactless SW, object detection
Overview
Mark for indicating
LED side
CNZ1111 and CNZ1112 are a photocoupler in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
25.0±0.35
13.0±0.3
5.0±0.2
A
0.45±0.1
Device
center
A'
2-0.45±0.2
(2.54)
SEC. A-A'
(10.0)
Features
Highly precise position detection : 0.3 mm
3
19.0±0.2
2
2-ø3.2±0.2
2
3
4
Wide gap between emitting and detecting elements, suitable for
thick plate detection
1
4
1
Pin connection
Fast response : tr, tf = 6 µs (typ.)
(Note) ( ) Dimension is reference
Small output current variation against change in temperature
Unit : mm
CNZ1112
0.45±0.1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
VR
3
50
75
20
30
5
V
mA
mW
mA
V
Mark for indicating
LED side
Input (Light
IF
emitting diode)
13.0±0.3
*1
PD
IC
5.0±0.2
A
0.45±0.1
Device
center
Collector to emitter voltage VCEO
Output (Photo
transistor)
A'
2-0.45±0.2
Emitter to collector voltage VECO
V
(10.0)
(2.54)
*2
Collector power dissipation PC
100
mW
SEC. A-A'
3
2
1
Operating ambient temperature
Topr –25 to +85 ˚C
Temperature
Storage temperature
Tstg –30 to +100 ˚C
*1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C.
4
2
1
3
4
Pin connection
(Note) ( ) Dimension is reference
1
Transmissive Photosensors (Photo Interrupters)
CNZ1111,CNZ1112
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Forward voltage (DC)
Reverse current (DC)
Collector cutoff current
Collector to emitter capacitance
Collector current
VF IF = 50mA
1.2
1.5
10
V
µA
nA
pF
mA
µs
Input
characteristics
IR VR = 3V
ICEO VCE = 10V
200
Output
characteristics
CC VCE = 10V, f = 1MHz
IC VCE = 10V, IF = 20mA
tr , tf* VCC = 10V, IC = 1mA, RL = 100Ω
5
6
0.3
Transfer
Response time
characteristics
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
0.3
V
* Switching time measurement circuit
Sig.IN
VCC
td : Delay time
(Input pulse)
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
90%
10%
Sig.OUT
(Output pulse)
td
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
50Ω
RL
tr
tf
IF , IC — Ta
IF — VF
IC — IF
60
50
40
30
20
10
0
60
10
VCE = 10V
Ta = 25˚C
Ta = 25˚C
IF
50
40
30
20
10
0
1
10 –1
IC
10 –2
10 –3
10 –1
– 25
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
2.4
1
10
10 2
Ambient temperature Ta (˚C )
Forward voltage VF (V)
Forward current IF (mA)
2
CNZ1111,CNZ1112
Transmissive Photosensors (Photo Interrupters)
VF — Ta
IC — VCE
IC — Ta
1.6
10 2
10
160
120
80
40
0
VCE = 10V
IF = 20mA
Ta = 25˚C
IF = 50mA
10mA
1.2
0.8
0.4
0
IF = 30mA
1
20mA
10mA
10 –1
10 –2
10 –1
– 40 – 20
0
20
40
60
80 100
1
10
10 2
– 40 – 20
0
20
40
60
80 100
Ambient temperature Ta (˚C )
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C )
I
CEO — Ta
tr — IC
IC — d
10
1
10 3
10 2
100
80
60
40
20
0
VCC = 10V
Ta = 25˚C
V
CE = 10V
Ta = 25˚C
IF = 20mA
Criterion
0
d
VCE = 24V
10V
RL = 1kΩ
500Ω
10 –1
10 –2
10 –3
10 –4
10
1
100Ω
Sig.IN
VCC
Sig.
V1
V2
90%
10%
OUT
V1
50Ω
V2
td
RL
tr
1
tf
10 –1
– 40 – 20
0
20
40
60
80 100
10 –2
10 –1
10
0
1
2
3
4
5
6
Ambient temperature Ta (˚C )
Collector current IC (mA)
Distance d (mm)
3
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