2SC3930G [PANASONIC]
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN;
| 型号： | 2SC3930G |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN 放大器 ISM频段 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3930G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1532G
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipmenand
automatic insertion through the tape packing
■ Pacage
• Code
SM
• Marbol: V
Name
1. Be
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 2°C
Parameter
Symbl
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VO
Emitter-base voltage (CollectoVEBO
30
20
V
5
30
V
Collector current
IC
PC
Tj
A
mW
°C
°C
Collector power dissipation
Junction temperaure
Storage temeratu
0
150
−55 to +150
■ Electal Characteristics T= 25°C 3°C
Paramer
Cllector-be cutoff rrent (Emittr open)
Foransferatio *
Tray
Symbo
ICBO
hFE
Conditions
Min
Typ
Max
0.1
Unit
µA
VC= 10 V, IE = 0
VCB = 10 V, IE = −1 mA
70
220
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz
VCB = 1V, IE = −1 mA, f = 5 MHz
VCB = 10 V, IE = −1 mA, f = 2 MHz
VCB = 10 V, IE = −1 mA, f = 10.7 MHz
150
250
2.8
22
MHz
dB
Noise fi
NF
4.0
50
Reverse traner impedance
Zrb
Ω
Reverse transfer capacitance
(Common emitter)
Cre
0.9
1.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
B
C
hFE
70 to 140
110 to 220
Publication date: April 2007
SJC00357AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3930G
PC Ta
IC VCE
IC IB
12
200
160
120
80
15.0
Ta = 25°C
VCE = 10 V
Ta = 25°C
IB = 100 µA
10
12.5
80 µA
8
10.0
60 µA
6
7.5
0 µA
4
5.0
40
20 µA
2
0
0
0
0
6
12
18
0
40
80
120
160
0
20
40
60
80
100
(
V
)
Colltor-emter voltage VCE
(
)
Ambient temperature Ta °C
(
)
Base current IB µA
IB VBE
IC VBE
VCE(sat) IC
120
100
80
60
40
20
0
60
50
4
3
10
0
10
10
IC / IB = 10
VC10 V
VCE =
Ta
25°C
Ta = 75
−25°C
1
Ta = 75°C
25°C
0.1
0.01
−25°C
0
0.2
0.4
0.6
0.
1.0
0
0.4
0.8
1.2
1.6
2.0
0.1
1
10
100
V
)
(
V
)
(
)
Base-emitr voltage VBE
Base-emitter voltage VBE
Collector current IC mA
IC
fT IE
Zrb IE
240
200
160
120
80
400
300
200
100
0
60
VCB = 10 V
f = 2 MHz
Ta = 25°C
VCE = 10 V
50
40
30
20
10
0
Ta = 75°C
25°C
−25°C
VCB = 10 V
f = 100 MHz
Ta = 25°C
40
0
0.1
1
10
100
− 0.1
−1
−10
−100
− 0.1
−1
−10
(
)
(
)
(
)
Collector current IC mA
Emitter current IE mA
Emitter current IE mA
SJC00357AED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3930G
Cre VCE
GP IE
NF IE
12
10
8
3.0
2.5
2.0
1.5
1.0
0.5
0
24
20
16
12
8
VCE = 10 V
f = 100 MHz
Ta = 25°C
VCB = 6 V
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
f = 10.7 MHz
Ta = 25°C
IC = 3 mA
1 mA
6
4
4
0
0
− 0.1
−1
−10
0.1
1
10
100
− 0.1
1
−10
−10
(
)
Emitter current IE mA
(
V
)
(
)
Collector-emitter voltage VCE
mitter rrent IE mA
bie gie
bre gre
bfe gfe
0
− 0.1
− 0.
− 0.3
− 0.5
− 0.6
0
−20
24
20
16
12
8
f = 10.MHz
f = 10.7 MHz
58
100
10.7
− 0.1 mA
−1 mA
yre = gre + jbre
VE = 10 V
Vie = gie
VCE =
−A
100
58
−4 mA
−2 mA
−2 mA
IE = −1 mA
100
−40
5
IE = −4 mA
58
−60
58
100
−80
100
−100
−120
4
MHz
yfe = gfe + jbfe
VCE = 10 V
0
− 0.5 − 0.4 − 0.3 − 0.2 − 0.1
0
0
8
16
24
32
40
0
20
40
60
80
100
(
)
(
)
Reverse transfer conductance gre mS
(
)
Input conctance gie m
orward transfer conductance gfe mS
goe
1.2
1.0
0.8
0.6
0.4
0.2
0
yoe = goe + jboe
VCE = 10 V
IE = −1 mA
100
58
f = 10.7 MHz
0
0.1
0.2
0.3
0.4
0.5
(
)
Output conductance goe mS
SJC00357AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(065)
1.30 0.1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household applianes).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic quipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability auiredor if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this boare bject o change withr modification and/or im-
provement. At the final stage of your design, purchasingor use f the products, therefore, he most up-todate Product
Standards in advance to make sure that the latest specificatns satisfy our requirem
(5) When designing your equipment, comply with he raof asolute maximm rang and the guaranteed operating conditions
(operating power supply voltage and operating envirtc.). Especially, plee be careful not to exceed the range of absolute
maximum rating on the transient state, sucs powower-off and ode-switing. Otherwise, we will not be liable for any
defect which may arise later in your equpment.
Even when the products are used withithe guarateed values, tke intthe consideration of incidence of break down and failure
mode, possible to occur to semicouctor roducts. Measures ohe systemsuch as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent phical iury, fire, social damages, for example, by using the products.
(6) Comply with the instruns fose in rder to prevent beakdowand characteristics change due to external factors (ESD, EOS,
thermal stress and mechanil stress) at the time of hndlingmounting or at customer's process. When using products for which
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(7) This book ay bnot reprinted or repd wether wholly or prtially, without the prior wtten permission of Matsushita
Electric Industal CoLtd.
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