2SC3930VC(SOT-323) [JCST]
Transistor;
| 型号： | 2SC3930VC(SOT-323) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
SOT-323
2SC3930
TRANSISTOR (NPN)
FEATURES
z
z
z
For high-frequency Amplification Complementary to 2SA1532
Optimum for RF amplification of FM/AM radios
High transition frequency fT
1.BASE
2.EMITTER
3.COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
30
Units
V
20
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
30
mA
mW
℃
PC
150
150
-55-150
TJ
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=100μA, IE=0
IC= 100μA, IB=0
IE= 100μA, IC=0
VCB=10V,IE=0
30
20
5
V
V
V
0.1
0.1
220
μA
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=10V,IC=1mA
70
V
CE=10V,IE=1mA,
f=200MHZ
VCB=10V,IC=1mA,
Transition frequency
fT
150
MHz
pF
Common emitter reverse transfer
capacitance
Cre
1.5
f=10.7MHZ
Noise figure
NF
Zrb
VCB=10V,IC=1mA, f=5MHz
4
dB
Reverse transfer impedance
VCB=10V,IC=1mA, f=2MHz
50
Ω
CLASSIFICATION OF hFE
(1)
VB
VC
110-220
Marking
Range
70-140
Typical Characteristics
2SC3930
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