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2SC3931G [PANASONIC]

RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, High Frequency Band, Silicon, NPN, ROHS COMPLIANT, SMINI3-F2, 3 PIN;
2SC3931G
型号： 2SC3931G
厂家： PANASONIC    PANASONIC
描述：

RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, High Frequency Band, Silicon, NPN, ROHS COMPLIANT, SMINI3-F2, 3 PIN

晶体 小信号双极晶体管 射频小信号双极晶体管 光电二极管 放大器
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Transistor  
2SC3931  
Silicon NPN epitaxial planer type  
For high-frequency amplification  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
■
●
Optimum for RF amplification of FM/AM radios.  
●
1
High transition frequency fT.  
●
S-Mini type package, allowing downsizing of the equipment and  
3
automatic insertion through the tape packing and the magazine  
packing.  
2
Absolute Maximum Ratings (Ta=25˚C)  
■
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
30  
0.2±0.1  
20  
V
3
15  
V
1:Base  
mA  
mW  
˚C  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Marking symbol : U  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
■
Parameter  
Symbol  
VCBO  
Conditions  
min  
30  
3
typ  
max  
260  
1
Unit  
V
Collector to base voltage  
Emitter to base voltage  
Forward current transfer ratio  
Base to emitter voltage  
Transition frequency  
IC = 10µA, IE = 0  
VEBO  
IE = 10µA, IC = 0  
V
*
hFE  
VCB = 6V, IE = –1mA  
65  
VBE  
fT  
VCB = 6V, IE = 1mA  
0.72  
650  
0.8  
24  
V
MHz  
pF  
VCB = 6V, IE = –1mA, f = 200MHz  
VCE = 6V, IC = 1mA, f = 10.7MHz  
VCB = 6V, IE = –1mA, f = 100MHz  
VCB = 6V, IE = –1mA, f = 100MHz  
450  
Common emitter reverse transfer capacitance Cre  
Power gain  
PG  
NF  
dB  
Noise figure  
3.3  
dB  
*hFE Rank classification  
Rank  
hFE  
C
D
65 ~ 160  
UC  
100 ~ 260  
UD  
Marking Symbol  
1
Transistor  
2SC3931  
PC — Ta  
IC — VCE  
IC — IB  
240  
200  
160  
120  
80  
12  
10  
8
12  
10  
8
Ta=25˚C  
IB=100µA  
VCE=6V  
Ta=25˚C  
80µA  
60µA  
6
6
40µA  
20µA  
4
4
40  
2
2
0
0
0
0
20 40 60 80 100 120 140 160  
0
6
12  
18  
0
60  
120  
180  
(
)
( )  
V
(
)
Ambient temperature Ta ˚C  
Collector to emitter voltage VCE  
Base current IB µA  
IC — VBE  
VCE(sat) — IC  
hFE — IC  
30  
25  
20  
15  
10  
5
100  
360  
300  
240  
180  
120  
60  
IC/IB=10  
VCE=6V  
VCE=6V  
30  
10  
25˚C  
Ta=75˚C  
–25˚C  
3
1
Ta=75˚C  
25˚C  
0.3  
0.1  
–25˚C  
Ta=75˚C  
–25˚C  
25˚C  
0.03  
0.01  
0
0
0.1  
0
0.4  
0.8  
1.2  
1.6  
2.0  
0.1  
0.3  
1
3
10  
30  
100  
0.3  
1
3
10  
30  
100  
( )  
V
(
)
(
)
Base to emitter voltage VBE  
Collector current IC mA  
Collector current IC mA  
fT — IE  
Zrb — IE  
Cre — VCE  
1200  
1000  
800  
600  
400  
200  
0
120  
100  
80  
60  
40  
20  
0
2.4  
VCB=6V  
f=2MHz  
Ta=25˚C  
IC=1mA  
f=10.7MHz  
Ta=25˚C  
VCB=6V  
Ta=25˚C  
2.0  
1.6  
1.2  
0.8  
0.4  
0
– 0.1 – 0.3  
–1  
–3  
–10 –30 –100  
– 0.1  
– 0.3  
–1  
–3  
–10  
0.1  
0.3  
1
3
10  
30  
100  
(
)
(
)
( )  
Collector to emitter voltage VCE V  
Emitter current IE mA  
Emitter current IE mA  
2
Transistor  
2SC3931  
Cob — VCB  
PG — IE  
NF — IE  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
40  
35  
30  
25  
20  
15  
10  
5
12  
10  
8
IE=0  
f=1MHz  
Ta=25˚C  
f=100MHz  
Rg=50kΩ  
Ta=25˚C  
f=100MHz  
Rg=50Ω  
Ta=25˚C  
VCE=10V  
6V  
6
4
VCE=6V, 10V  
2
0
0
0
5
10  
15  
20  
25  
30  
– 0.1 – 0.3  
–1  
–3  
–10 –30 –100  
– 0.1 – 0.3  
–1  
–3  
–10 –30 –100  
( )  
V
(
)
(
)
Collector to base voltage VCB  
Emitter current IE mA  
Emitter current IE mA  
bie — gie  
bre — gre  
bfe — gfe  
20  
0
–1  
–2  
–3  
–4  
–5  
–6  
0
–20  
10.7  
58  
yie=gie+jbie  
VCE=10V  
10.7  
25  
150  
100  
– 0.4mA  
yre=gre+jbre  
VCE=10V  
–4mA  
18  
16  
14  
12  
10  
8
–1mA  
150  
100  
–7mA  
–2mA  
–2mA  
–4mA  
–1mA  
100  
58  
–40  
150  
–4mA  
100  
58  
58  
IE=–7mA  
f=150MHz  
–60  
–1mA  
IE=–7mA  
100  
58  
–80  
100  
6
25  
4
25  
–100  
–120  
yfe=gfe+jbfe  
VCE=10V  
2
f=150MHz  
f=10.7MHz  
0
0
3
6
9
12  
15  
– 0.5 – 0.4 – 0.3 – 0.2 – 0.1  
0
0
20  
40  
60  
80  
100  
(
)
(
)
(
)
Input conductance gie mS  
Reverse transfer conductance gre mS  
Forward transfer conductance gfe mS  
boe — goe  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
150  
–2mA  
–4mA  
100  
–7mA  
58  
25  
yoe=goe+jboe  
VCE=10V  
f=10.7MHz  
0
2
4
6
8
10  
(
)
Output conductance goe mS  
3

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