2SC3931G-D [PANASONIC]
RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, High Frequency Band, Silicon, NPN, ROHS COMPLIANT, SMINI3-F2, 3 PIN;
| 型号： | 2SC3931G-D |
| 厂家： | 
PANASONIC |
| 描述： | RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, High Frequency Band, Silicon, NPN, ROHS COMPLIANT, SMINI3-F2, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3931
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
+0.10
+0.1
–0.0
0.15
0.3
–0.05
3
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment ad
automatic insertion through the tape packing
1
0.65)
1.3 0.1
2.0 2
■ Absolute Maximum Ratings Ta = 2°C
10
Parameter
Symbol
Unit
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VEO
Emitter-base voltage (CollectoVEBO
30
1: Base
2: Emitter
3:Collector
20
V
3
5
EIAJ: SC-70
SMini3-G1 Package
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperaure
Storage temperate
50
Marking Symbol: U
150
T
−5 to +150
■ ElecCharacterisics Ta 25°C 3°C
Paramer
Symbol
VCBO
VEBO
VBE
Conditions
Min
30
3
Typ
Max
Unit
V
Cllector-base voage (Emitter pen)
Emitttage Collector open)
Be
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
V
VCB = 6 V, IE = −1 mA
720
mV
Forwansfer ratio *
Transition ency
hFE
VCB = 6 V, IE = −1 A
65
260
1.0
fT
VCB = 6 V, IE = −1 mA, f = 200 MHz
VCB = 6 V, IE = −1 mA, f = 10.7 MHz
450
650
0.8
MHz
pF
Common-emitter reverse transfer
capacitance
Cre
Power gain
GP
VCB = 6 V, IE = −1 mA, f = 100 MHz
VCB = 6 V, IE = −1 mA, f = 100 MHz
24
dB
dB
Noise figure
NF
3.3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
C
D
hFE
65 to 160
100 to 260
Publication date: March 2003
SJC00142BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3931
PC Ta
IC VCE
IC IB
12
200
160
120
80
12
Ta = 25°C
VCE = 6 V
Ta = 25°C
IB = 100 µA
10
8
10
8
80 µA
60 µA
6
6
40
20 µA
4
4
40
2
0
0
0
0
6
12
18
0
40
80
120
160
0
60
120
180
(
)
V
Colltor-emter voltage VCE
(
)
Ambient temperature Ta °C
(
)
Base current IB µA
IC VBE
VCE(sa
hFE IC
100
10
360
300
240
180
120
60
30
25
20
15
10
5
IC = 10
VCE = 6 V
VCE =
25°C
Ta = 75°C
−25°C
Ta = 75°C
25°C
−25°C
Ta = 75°C
−25°C
25°C
1
0.01
0
0.1
0
0.1
10
100
1
10
100
0
0.4
0.8
1.2
1.
2.0
(
)
(
)
)
V
Collector current IC mA
Collector current IC mA
Base-emittvoltage VBE
IE
Zr IE
Cre VCE
1200
1000
800
600
400
200
0
120
2.4
VCB = 6 V
f = 2 MHz
Ta = 25°C
IC = 1 mA
f = 10.7 MHz
Ta = 25°C
VCB = 6 V
Ta = 25°C
100
80
60
40
20
0
2.0
1.6
1.2
0.8
0.4
0
− 0.1
−1
−10
−100
− 0.1
−1
−10
0.1
1
10
100
(
)
(
)
Emitter current IE mA
Emitter current IE mA
(
)
V
Collector-emitter voltage VCE
SJC00142BED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3931
Cob VCB
GP IE
NF IE
40
30
20
10
0
12
10
8
1.2
1.0
0.8
0.6
0.4
0.2
0
f = 100 MHz
Rg = 50 kΩ
Ta = 25°C
IE = 0
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
f = 1 MHz
Ta = 25°C
VCE = 10 V
6 V
6
VCE = 6 V, 10 V
4
0
− 0.1
−1
−10
−10
− 0.1
−1
−10
−100
0
5
10
15
20
25
30
(
)
(
)
(
)
V
mitter urrent IE mA
Emitter current IE mA
Collector-base voltage VCB
bie gie
bre gre
bfe gfe
0
−1
−
−
−5
−6
0
−20
20
16
12
8
yie = gie + jbie
10.7
25
150
yre = gre + jbre
VE = 10
10.7
VCE = 10 V
−4 mA
58
−1 mA
100
150
−2 mA
7 mA
−4 mA
−1 mA
−2 mA
100
58
−40
−4 mA
150
58
100
58
IE = −7 mA
−60
f = 50 MHz
IE = −7 mA
100
58
−80
100
−100
−120
yfe = gfe + jbfe
VCE = 10 V
f = 150 MHz
f = 10.7 MHz
0
− 0.5 − 0.4 − 0.3 − 0.2 − 0.1
0
0
20
40
60
80
100
0
3
6
9
12
15
(
)
(
)
(
)
Reverse transfer conductance gre mS
orward transfer conductance gfe mS
Input conctance gie m
goe
1.2
1.0
0.8
0.6
0.4
0.2
0
150
−2 mA
−4 mA
100
−7 mA
58
25
yoe = goe + jboe
VCE = 10 V
f = 10.7 MHz
0
0.1
0.2
0.3
0.4
0.5
(
)
Output conductance goe mS
SJC00142BED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household applianes).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic quipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability auiredor if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this boare bject o change withr modification and/or im-
provement. At the final stage of your design, purchasingor use f the products, therefore, he most up-todate Product
Standards in advance to make sure that the latest specificatns satisfy our requirem
(5) When designing your equipment, comply with he raof asolute maximm rang and the guaranteed operating conditions
(operating power supply voltage and operating envirtc.). Especially, plee be careful not to exceed the range of absolute
maximum rating on the transient state, sucs powower-off and ode-switing. Otherwise, we will not be liable for any
defect which may arise later in your equpment.
Even when the products are used withithe guarateed values, tke intthe consideration of incidence of break down and failure
mode, possible to occur to semicouctor roducts. Measures ohe systemsuch as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent phical iury, fire, social damages, for example, by using the products.
(6) Comply with the instruns fose in rder to prevent beakdowand characteristics change due to external factors (ESD, EOS,
thermal stress and mechanil stress) at the time of hndlingmounting or at customer's process. When using products for which
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(7) This book ay bnot reprinted or repd wether wholly or prtially, without the prior wtten permission of Matsushita
Electric Industal CoLtd.
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