2SC3932G-T [PANASONIC]
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, High Frequency Band, Silicon, NPN, ROHS COMPLIANT, SMINI3-F2, 3 PIN;
| 型号： | 2SC3932G-T |
| 厂家： | 
PANASONIC |
| 描述： | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, High Frequency Band, Silicon, NPN, ROHS COMPLIANT, SMINI3-F2, 3 PIN |
| 文件： | 总3页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
2SC3932
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency amplification / oscillation / mixing
+±.1±
+±.1
–±.±
±.15
±.3
–±.±5
3
I Features
• High transition frequency fT
1
2
• S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(±.65) (±.65)
1.3±±.1
2.±±±.2
1±°
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
1: Base
20
V
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package
3
50
V
mA
mW
°C
°C
Marking Symbol: R
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Tstg
−55 to +150
I Electrical Characteristics Ta = 25°C 3°C
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency *
Symbol
VCBO
VEBO
hFE
Conditions
Min
30
3
Typ
Max
Unit
V
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
V
VCB = 10 V, IE = −2 mA
25
250
VBE
fT
VCB = 10 V, IE = −2 mA
720
mV
MHz
pF
VCB = 10 V, IE = −15 mA, f = 200 MHz
VCB = 10 V, IE = −1 mA, f = 10.7 MHz
VCE= 6 V, IC = 0, f = 1 MHz
VCB = 10 V, IE = −1 mA, f = 200 MHz
800
1 600
1.5
Cre
1
Common emitter reverse transfer
capacitance
Crb
0.8
20
pF
Power gain
PG
dB
Note) : Rank classification
*
Rank
T
S
No-rank
fT (MHz)
800 to 1 400 1 000 to 1 600 800 to 1 600
RT RS
Marking symbol
R
Product of no-rank is not classified and have no indication for rank.
1
2SC3932
Transistors
PC Ta
IC VCE
IC IB
24
20
16
12
8
240
200
160
120
80
24
20
16
12
8
Ta = 25°C
VCE = 10 V
Ta = 25°C
IB = 300 µA
250 µA
200 µA
150 µA
100 µA
50 µA
4
40
4
0
0
0
0
100
200
300
400
500
0
40
80
120
160
0
2
4
6
8
10 12 14 16 18
Base current IB (µA)
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
IB VBE
IC VBE
hFE IC
400
60
50
40
30
20
10
0
240
200
160
120
80
VCE = 10 V
VCE = 10 V
VCE = 10 V
25°C
Ta = 25°C
350
300
250
200
150
100
50
−25°C
Ta = 75°C
Ta = 75°C
25°C
−25°C
40
0
0
0
0.4
0.8
1.2
1.6
2.0
0
0.4
0.8
1.2
1.6
2.0
0.1 0.3
1
3
10
30
100
Base to emitter voltage VBE (V)
Base to emitter voltage VBE (V)
Collector current IC (mA)
VCE(sat) IC
fT IE
Cre VCE
100
1 600
1 400
1 200
1 000
800
2.4
2.0
1.6
1.2
0.8
0.4
0
IC / IB = 10
VCB = 10 V
Ta = 25°C
IC = 1 mA
f = 10.7 MHz
30
10
Ta = 25°C
3
1
Ta = 75°C
25°C
600
0.3
0.1
400
–25°C
200
0.03
0.01
0
0.1 0.3
1
3
10
30
100
− 0.1 − 0.3 −1
−3
−10 −30 −100
0.1 0.3
1
3
10
30
100
Collector current IC (mA)
Emitter current IE (mA)
Collector to emitter voltage VCE (V)
2
Transistors
2SC3932
Zrb IE
PG IE
NF IE
40
35
30
25
20
15
10
5
120
100
80
60
40
20
0
12
10
8
VCB = 10 V
f = 2 MHz
Ta = 25°C
VCB = 10 V
f = 100 MHz
Rg = 50 Ω
VCB = 10 V
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
Ta = 25°C
6
4
2
0
0
− 0.1 − 0.2− 0.3− 0.5 −1
−2 −3 −5 −10
− 0.1 − 0.3 −1
−3
−10 −30 −100
− 0.1 − 0.3 −1
−3
−10 −30 −100
Emitter current IE (mA)
Emitter current IE (mA)
Emitter current IE (mA)
bib gib
brb grb
bfb gfb
0
− 0.4
− 0.8
−1.2
−1.6
−2.0
−2.4
48
40
32
24
16
8
0
−10
−20
−30
−40
−50
−60
200
yrb = grb + jbrb
VCB = 10 V
yfb = gfb + jbfb
VCB = 10 V
yib = gib + jbib
VCB = 10 V
300
500
f = 200 MHz
IE = −5 mA
−2 mA
IE = −2 mA
300
600
f = 900 MHz
−5 mA
500
600
600
f = 900 MHz
500
300
−2 mA
IE = −5 mA
200
900
0
−60
−1.0 − 0.8 − 0.6 − 0.4 − 0.2
0
−40
−20
0
20
40
0
10
20
30
40
50
Reverse transfer conductance grb (mS)
Forward transfer conductance gfb (mS)
Input conductance gib (mS)
bob gob
12
10
8
yob = gob + jbob
900
VCE = 10 V
600
IE = −2 mA
−5 mA
500
6
4
300
2
f = 200 MHz
0
0
0.4
0.8
1.2
1.6
2.0
Output conductance gob (mS)
3
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