2SC3932T [ETC]
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SC-70 ; 晶体管| BJT | NPN | 20V V（ BR ） CEO | 50MA I（C ） | SC- 70\n
| 型号： | 2SC3932T |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SC-70
|
| 文件： | 总4页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
2SC3932
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency amplification / oscillation / mixing
+±.1±
+±.1
–±.±
±.15
±.3
–±.±5
3
I Features
• High transition frequency fT
1
2
• S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(±.65) (±.65)
1.3±±.1
2.±±±.2
1±°
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
1: Base
20
V
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package
3
50
V
mA
mW
°C
°C
Marking Symbol: R
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Tstg
−55 to +150
I Electrical Characteristics Ta = 25°C 3°C
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency *
Symbol
VCBO
VEBO
hFE
Conditions
Min
30
3
Typ
Max
Unit
V
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
V
VCB = 10 V, IE = −2 mA
25
250
VBE
fT
VCB = 10 V, IE = −2 mA
720
mV
MHz
pF
VCB = 10 V, IE = −15 mA, f = 200 MHz
VCB = 10 V, IE = −1 mA, f = 10.7 MHz
VCE= 6 V, IC = 0, f = 1 MHz
VCB = 10 V, IE = −1 mA, f = 200 MHz
800
1 600
1.5
Cre
1
Common emitter reverse transfer
capacitance
Crb
0.8
20
pF
Power gain
PG
dB
Note) : Rank classification
*
Rank
T
S
No-rank
fT (MHz)
800 to 1 400 1 000 to 1 600 800 to 1 600
RT RS
Marking symbol
R
Product of no-rank is not classified and have no indication for rank.
1
2SC3932
Transistors
PC Ta
IC VCE
IC IB
24
20
16
12
8
240
200
160
120
80
24
20
16
12
8
Ta = 25°C
VCE = 10 V
Ta = 25°C
IB = 300 µA
250 µA
200 µA
150 µA
100 µA
50 µA
4
40
4
0
0
0
0
100
200
300
400
500
0
40
80
120
160
0
2
4
6
8
10 12 14 16 18
Base current IB (µA)
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
IB VBE
IC VBE
hFE IC
400
60
50
40
30
20
10
0
240
200
160
120
80
VCE = 10 V
VCE = 10 V
VCE = 10 V
25°C
Ta = 25°C
350
300
250
200
150
100
50
−25°C
Ta = 75°C
Ta = 75°C
25°C
−25°C
40
0
0
0
0.4
0.8
1.2
1.6
2.0
0
0.4
0.8
1.2
1.6
2.0
0.1 0.3
1
3
10
30
100
Base to emitter voltage VBE (V)
Base to emitter voltage VBE (V)
Collector current IC (mA)
VCE(sat) IC
fT IE
Cre VCE
100
1 600
1 400
1 200
1 000
800
2.4
2.0
1.6
1.2
0.8
0.4
0
IC / IB = 10
VCB = 10 V
Ta = 25°C
IC = 1 mA
f = 10.7 MHz
30
10
Ta = 25°C
3
1
Ta = 75°C
25°C
600
0.3
0.1
400
–25°C
200
0.03
0.01
0
0.1 0.3
1
3
10
30
100
− 0.1 − 0.3 −1
−3
−10 −30 −100
0.1 0.3
1
3
10
30
100
Collector current IC (mA)
Emitter current IE (mA)
Collector to emitter voltage VCE (V)
2
Transistors
2SC3932
Zrb IE
PG IE
NF IE
40
35
30
25
20
15
10
5
120
100
80
60
40
20
0
12
10
8
VCB = 10 V
f = 2 MHz
Ta = 25°C
VCB = 10 V
f = 100 MHz
Rg = 50 Ω
VCB = 10 V
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
Ta = 25°C
6
4
2
0
0
− 0.1 − 0.2− 0.3− 0.5 −1
−2 −3 −5 −10
− 0.1 − 0.3 −1
−3
−10 −30 −100
− 0.1 − 0.3 −1
−3
−10 −30 −100
Emitter current IE (mA)
Emitter current IE (mA)
Emitter current IE (mA)
bib gib
brb grb
bfb gfb
0
− 0.4
− 0.8
−1.2
−1.6
−2.0
−2.4
48
40
32
24
16
8
0
−10
−20
−30
−40
−50
−60
200
yrb = grb + jbrb
VCB = 10 V
yfb = gfb + jbfb
VCB = 10 V
yib = gib + jbib
VCB = 10 V
300
500
f = 200 MHz
IE = −5 mA
−2 mA
IE = −2 mA
300
600
f = 900 MHz
−5 mA
500
600
600
f = 900 MHz
500
300
−2 mA
IE = −5 mA
200
900
0
−60
−1.0 − 0.8 − 0.6 − 0.4 − 0.2
0
−40
−20
0
20
40
0
10
20
30
40
50
Reverse transfer conductance grb (mS)
Forward transfer conductance gfb (mS)
Input conductance gib (mS)
bob gob
12
10
8
yob = gob + jbob
900
VCE = 10 V
600
IE = −2 mA
−5 mA
500
6
4
300
2
f = 200 MHz
0
0
0.4
0.8
1.2
1.6
2.0
Output conductance gob (mS)
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
相关型号：
2SC3932TX
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN
PANASONIC
2SC3933H
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
PANASONIC
2SC3934
Silicon NPN epitaxial planer type(For high-frequency wide-band low-noise amplification)
PANASONIC
2SC3934H
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
PANASONIC
2SC3934TX
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
PANASONIC
2SC3935
Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)
PANASONIC
2SC3935GP
Small Signal Bipolar Transistor, 0.05A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN
PANASONIC
2SC3935GQ
Small Signal Bipolar Transistor, 0.05A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN
PANASONIC
2SC3935H
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
PANASONIC
©2020 ICPDF网 联系我们和版权申明