2SC3931C [ETC]
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 15MA I(C) | TO-236 ; 晶体管| BJT | NPN | 20V V( BR ) CEO | 15MA I(C ) | TO- 236\n型号: | 2SC3931C |
厂家: | ETC |
描述: | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 15MA I(C) | TO-236
|
文件: | 总4页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Transistor
2SC3931
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
2.1±0.1
0.425
1.25±0.1
0.425
Features
■
●
Optimum for RF amplification of FM/AM radios.
●
1
High transition frequency fT.
●
S-Mini type package, allowing downsizing of the equipment and
3
automatic insertion through the tape packing and the magazine
packing.
2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
0.2±0.1
20
V
3
15
V
1:Base
mA
mW
˚C
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Marking symbol : U
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
VCBO
Conditions
min
30
3
typ
max
260
1
Unit
V
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
IC = 10µA, IE = 0
VEBO
IE = 10µA, IC = 0
V
*
hFE
VCB = 6V, IE = –1mA
65
VBE
fT
VCB = 6V, IE = 1mA
0.72
650
0.8
24
V
MHz
pF
VCB = 6V, IE = –1mA, f = 200MHz
VCE = 6V, IC = 1mA, f = 10.7MHz
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA, f = 100MHz
450
Common emitter reverse transfer capacitance Cre
Power gain
PG
NF
dB
Noise figure
3.3
dB
*hFE Rank classification
Rank
hFE
C
D
65 ~ 160
UC
100 ~ 260
UD
Marking Symbol
1
Transistor
2SC3931
PC — Ta
IC — VCE
IC — IB
240
200
160
120
80
12
10
8
12
10
8
Ta=25˚C
IB=100µA
VCE=6V
Ta=25˚C
80µA
60µA
6
6
40µA
20µA
4
4
40
2
2
0
0
0
0
20 40 60 80 100 120 140 160
0
6
12
18
0
60
120
180
(
)
( )
V
(
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Base current IB µA
IC — VBE
VCE(sat) — IC
hFE — IC
30
25
20
15
10
5
100
360
300
240
180
120
60
IC/IB=10
VCE=6V
VCE=6V
30
10
25˚C
Ta=75˚C
–25˚C
3
1
Ta=75˚C
25˚C
0.3
0.1
–25˚C
Ta=75˚C
–25˚C
25˚C
0.03
0.01
0
0
0.1
0
0.4
0.8
1.2
1.6
2.0
0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
( )
V
(
)
(
)
Base to emitter voltage VBE
Collector current IC mA
Collector current IC mA
fT — IE
Zrb — IE
Cre — VCE
1200
1000
800
600
400
200
0
120
100
80
60
40
20
0
2.4
VCB=6V
f=2MHz
Ta=25˚C
IC=1mA
f=10.7MHz
Ta=25˚C
VCB=6V
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
– 0.1 – 0.3
–1
–3
–10 –30 –100
– 0.1
– 0.3
–1
–3
–10
0.1
0.3
1
3
10
30
100
(
)
(
)
( )
Collector to emitter voltage VCE V
Emitter current IE mA
Emitter current IE mA
2
Transistor
2SC3931
Cob — VCB
PG — IE
NF — IE
1.2
1.0
0.8
0.6
0.4
0.2
0
40
35
30
25
20
15
10
5
12
10
8
IE=0
f=1MHz
Ta=25˚C
f=100MHz
Rg=50kΩ
Ta=25˚C
f=100MHz
Rg=50Ω
Ta=25˚C
VCE=10V
6V
6
4
VCE=6V, 10V
2
0
0
0
5
10
15
20
25
30
– 0.1 – 0.3
–1
–3
–10 –30 –100
– 0.1 – 0.3
–1
–3
–10 –30 –100
( )
V
(
)
(
)
Collector to base voltage VCB
Emitter current IE mA
Emitter current IE mA
bie — gie
bre — gre
bfe — gfe
20
0
–1
–2
–3
–4
–5
–6
0
–20
10.7
58
yie=gie+jbie
VCE=10V
10.7
25
150
100
– 0.4mA
yre=gre+jbre
VCE=10V
–4mA
18
16
14
12
10
8
–1mA
150
100
–7mA
–2mA
–2mA
–4mA
–1mA
100
58
–40
150
–4mA
100
58
58
IE=–7mA
f=150MHz
–60
–1mA
IE=–7mA
100
58
–80
100
6
25
4
25
–100
–120
yfe=gfe+jbfe
VCE=10V
2
f=150MHz
f=10.7MHz
0
0
3
6
9
12
15
– 0.5 – 0.4 – 0.3 – 0.2 – 0.1
0
0
20
40
60
80
100
(
)
(
)
(
)
Input conductance gie mS
Reverse transfer conductance gre mS
Forward transfer conductance gfe mS
boe — goe
1.2
1.0
0.8
0.6
0.4
0.2
0
150
–2mA
–4mA
100
–7mA
58
25
yoe=goe+jboe
VCE=10V
f=10.7MHz
0
2
4
6
8
10
(
)
Output conductance goe mS
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
相关型号:
2SC3931G
RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, High Frequency Band, Silicon, NPN, ROHS COMPLIANT, SMINI3-F2, 3 PIN
PANASONIC
2SC3931G-D
RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, High Frequency Band, Silicon, NPN, ROHS COMPLIANT, SMINI3-F2, 3 PIN
PANASONIC
2SC3931H
RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, Very High Frequency Band, Silicon, NPN
PANASONIC
2SC3932
Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)
PANASONIC
2SC3932G-T
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, High Frequency Band, Silicon, NPN, ROHS COMPLIANT, SMINI3-F2, 3 PIN
PANASONIC
2SC3932H
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN
PANASONIC
2SC3932TX
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN
PANASONIC
2SC3933H
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
PANASONIC
©2020 ICPDF网 联系我们和版权申明