2SC3930GC [PANASONIC]
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN;
| 型号： | 2SC3930GC |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN 晶体 小信号双极晶体管 光电二极管 ISM频段 放大器 |
| 文件： | 总3页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SC3930
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1532
Unit: mm
2.1±0.1
0.425
1.25±0.1
0.425
Features
■
●
Optimum for RF amplification of FM/AM radios.
●
1
High transition frequency fT.
●
S-Mini type package, allowing downsizing of the equipment and
3
automatic insertion through the tape packing and the magazine
packing.
2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
0.2±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
20
V
5
30
V
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
mA
mW
˚C
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Marking symbol : V
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
0.1
Unit
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
VCB = 10V, IE = 0
µA
*
hFE
fT
VCB = 10V, IE = –1mA
70
220
VCB = 10V, IE = –1mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 5MHz
VCB = 10V, IE = –1mA, f = 2MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
150
250
2.8
22
MHz
dB
Ω
NF
Zrb
4
Reverse transfer impedance
50
1.5
Common emitter reverse transfer capacitance Cre
0.9
pF
*hFE Rank classification
Rank
hFE
B
C
70 ~ 140
VB
110 ~ 220
VC
Marking Symbol
1
Transistor
2SC3930
PC — Ta
IC — VCE
IC — IB
240
200
160
120
80
12
10
8
15.0
12.5
10.0
7.5
5.0
2.5
0
Ta=25˚C
IB=100µA
VCE=10V
Ta=25˚C
80µA
60µA
6
40µA
20µA
4
40
2
0
0
0
20 40 60 80 100 120 140 160
0
6
12
18
0
20
40
60
80
100
(
)
( )
V
(
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Base current IB µA
IB — VBE
IC — VBE
VCE(sat) — IC
120
100
80
60
40
20
0
60
100
IC/IB=10
VCE=10V
VCE=10V
Ta=25˚C
30
10
50
40
30
20
10
0
25˚C
3
1
Ta=75˚C
–25˚C
0.3
0.1
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0
0.2
0.4
0.6
0.8
1.0
0
0.4
0.8
1.2
1.6
2.0
0.1
0.3
1
3
10
30
100
(
V
)
( )
V
(
)
Base to emitter voltage VBE
Base to emitter voltage VBE
Collector current IC mA
hFE — IC
fT — IE
Zrb — IE
240
200
160
120
80
400
350
300
250
200
150
100
50
60
VCB=10V
f=2MHz
Ta=25˚C
VCE=10V
VCB=10V
f=100MHz
Ta=25˚C
50
40
30
20
10
0
Ta=75˚C
25˚C
–25˚C
40
0
0.1
0
0.3
1
3
10
30
100
– 0.1 – 0.3
–1
–3
–10 –30 –100
– 0.1
– 0.3
–1
–3
–10
(
)
(
)
(
)
Collector current IC mA
Emitter current IE mA
Emitter current IE mA
2
Transistor
2SC3930
Cre — VCE
PG — IE
NF — IE
3.0
2.5
2.0
24
20
16
12
8
12
10
8
VCE=10V
f=100MHz
Ta=25˚C
VCB=6V
f=10.7MHz
Ta=25˚C
f=100MHz
Rg=50Ω
Ta=25˚C
IC=3mA
1mA
1.5
6
1.0
0.5
0
4
4
2
0
0
– 0.1
0.1
0.3
1
3
10
30
100
– 0.1 – 0.3
–1
–3
–10 –30 –100
– 0.3
–1
–3
–10
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Emitter current IE mA
Emitter current IE mA
bie — gie
bre — gre
bfe — gfe
24
0
– 0.1
– 0.2
– 0.3
– 0.4
– 0.5
– 0.6
0
–20
f=10.7MHz
10.7
f=10.7MHz
– 0.1mA
–1mA
58
Vie=gie+jbie
VCE=10V
yre=gre+jbre
VCE=10V
100
20
16
12
8
–7mA
100
58
–4mA
–2mA
–2mA
100
IE=–1mA
58
–40
58
IE=–4mA
100
–60
58
–80
100
4
–100
–120
f=10.7MHz
8
yfe=gfe+jbfe
VCE=10V
0
0
16
24
32
40
– 0.5 – 0.4 – 0.3 – 0.2 – 0.1
0
0
20
40
60
80
100
(
)
(
)
(
)
Input conductance gie mS
Reverse transfer conductance gre mS
Forward transfer conductance gfe mS
boe — goe
1.2
1.0
0.8
0.6
0.4
0.2
0
yoe=goe+jboe
VCE=10V
IE=–1mA
100
58
f=10.7MHz
0.1
0
0.2
0.3
0.4
0.5
)
(
Output conductance goe mS
3
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