MMBT2369ALT3G [ONSEMI]
NPN 双极晶体管;
| 型号： | MMBT2369ALT3G |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极晶体管 晶体管 |
| 文件： | 总6页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT2369L, MMBT2369AL
Switching Transistors
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
www.onsemi.com
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT−23
CASE 318
STYLE 6
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
15
Unit
Vdc
V
CEO
COLLECTOR
3
V
40
Vdc
CES
CBO
EBO
V
V
40
Vdc
4.5
200
Vdc
1
BASE
Collector Current − Continuous
I
C
mAdc
2
THERMAL CHARACTERISTICS
EMITTER
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
D
MARKING DIAGRAM
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
JA
xxx M G
G
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
1
Derate above 25°C
xxx = M1J or 1JA
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
M
= Date Code*
G
= Pb−Free Package
T , T
J
−55 to +150
stg
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT2369LT1G
SOT−23
3,000 /
(Pb−Free)
Tape & Reel
SMMBT2369LT1G
MMBT2369ALT1G
SMMBT2369ALT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SOT−23
3,000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2016 − Rev. 10
MMBT2369LT1/D
MMBT2369L, MMBT2369AL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
V
Vdc
Vdc
Vdc
Vdc
mAdc
(BR)CEO
(I = 10 mAdc, I = 0)
15
40
40
4.5
−
−
−
−
−
−
−
−
C
B
Collector−Emitter Breakdown Voltage
(I = 10 mAdc, V = 0)
V
(BR)CES
(BR)CBO
(BR)EBO
C
BE
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
E
C
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
CBO
−
−
−
−
0.4
30
CB
E
(V = 20 Vdc, I = 0, T = 150°C)
CB
E
A
Collector Cutoff Current
I
mAdc
CES
MMBT2369A (V = 20 Vdc, V = 0)
−
−
0.4
CE
BE
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
−
MMBT2369 (I = 10 mAdc, V = 1.0 Vdc)
40
−
40
20
30
20
20
−
−
−
−
−
−
−
120
120
−
−
−
−
−
C
CE
MMBT2369A (I = 10 mAdc, V = 1.0 Vdc)
C
CE
MMBT2369A (I = 10 mAdc, V = 0.35 Vdc)
C
CE
CE
MMBT2369A (I = 10 mAdc, V = 0.35 Vdc, T = −55°C)
C
A
MMBT2369A (I = 30 mAdc, V = 0.4 Vdc)
C
CE
CE
MMBT2369 (I = 100 mAdc, V = 2.0 Vdc)
C
MMBT2369A (I = 100 mAdc, V = 1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage (Note 3)
MMBT2369 (I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−
−
−
−
−
−
−
−
0.25
0.20
0.30
0.25
0.50
C
B
MMBT2369A (I = 10 mAdc, I = 1.0 mAdc)
C
B
MMBT2369A (I = 10 mAdc, I = 1.0 mAdc, T = +125°C)
C
B
A
MMBT2369A (I = 30 mAdc, I = 3.0 mAdc)
C
B
MMBT2369A (I = 100 mAdc, I = 10 mAdc)
C
B
Base−Emitter Saturation Voltage (Note 3)
MMBT2369/A (I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
0.7
−
−
−
−
−
−
0.85
1.02
1.15
1.60
C
B
MMBT2369A (I = 10 mAdc, I = 1.0 mAdc, T = −55°C)
C
B
A
MMBT2369A (I = 30 mAdc, I = 3.0 mAdc)
C
B
MMBT2369A (I = 100 mAdc, I = 10 mAdc)
−
C
B
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
C
pF
−
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
−
−
−
4.0
−
CB
E
Small Signal CurrentGain
(I = 10 mAdc, V = 10 Vdc, f = 100 MHz)
h
fe
5.0
C
CE
SWITCHING CHARACTERISTICS
Storage Time
t
ns
ns
ns
s
(I = I = I = 10 mAdc)
−
−
−
5.0
8.0
10
13
12
18
B1
B2
C
Turn−On Time
(V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc)
CC
t
t
on
C
B1
Turn−Off Time
off
(V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc, I = 1.5 mAdc)
CC
C
B1
B2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
www.onsemi.com
2
MMBT2369L, MMBT2369AL
270 W
95 W
t
1
t
1
3 V
+10.6 V
0
10 V
+10.8 V
0
-1.5 V
-2 V
< 1 ns
3.3 k
C * < 4 pF
s
< 1 ns
1 k
C * < 12 pF
s
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors.
Figure 2. ton Circuit − 100 mA
Figure 1. ton Circuit − 10 mA
95 W
270 W
t
1
t
1
10 V
+11.4 V
0
+10.75 V
0
-9.15 V
-8.6 V
1 k
C * < 12 pF
s
3.3 k
C * < 4 pF
s
< 1 ns
< 1 ns
1N916
PULSE WIDTH (t ) BETWEEN
1
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
10 AND 500 ms
DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors.
Figure 4. toff Circuit − 100 mA
Figure 3. toff Circuit − 10 mA
TO OSCILLOSCOPE
INPUT IMPEDANCE = 50 W
RISE TIME = 1 ns
TURN-ON WAVEFORMS
V
0
in
0.1 mF
220 W
10%
90%
V
out
TURN-OFF WAVEFORMS
V
out
3.3 kW
V
in
0
10%
90%
= +12 V
t
on
V
in
3.3 k
0.0023 mF
50 W
0.0023 mF
V
out
PULSE GENERATOR
ꢀV RISE TIME < 1 ns
50 W
0.005 mF 0.005 mF
in
V
BB
ꢀSOURCE IMPEDANCE = 50 W
ꢀPW ≥ 300 ns
ꢀDUTY CYCLE < 2%
+
-
+
V
CC
0.1 mF 0.1 mF
V
BB
= 3 V
V = -15 V
in
-
t
off
Figure 5. Turn−On and Turn−Off Time Test Circuit
www.onsemi.com
3
MMBT2369L, MMBT2369AL
6
5
100
LIMIT
TYPICAL
50
T = 25°C
J
β = 10
F
V
CC
= 10 V
V
= 2 V
OB
4
3
C
t
f
ib
t (V = 3 V)
CC
r
C
ob
20
10
5
V
= 10 V
CC
t
r
2
t
s
t
d
1
2
0.1
0.2
0.5
1.0
2.0
5.0
10
1
2
5
10
20
50
100
REVERSE BIAS (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 6. Junction Capacitance Variations
Figure 7. Typical Switching Times
980
t
1
10 V
C < C
+6 V
OPT
C = 0
0
-4 V
C
C
OPT
< 1 ns
500
C * < 3 pF
s
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
TIME
Figure 8. Turn−Off Waveform
Figure 9. Storage Time Equivalent Test Circuit
1.0
0.8
T = 25°C
J
I = 3 mA
C
I = 10 mA
C
I = 30 mA
C
I = 50 mA
C
I = 100 mA
C
0.6
0.4
0.2
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
I , BASE CURRENT (mA)
B
Figure 10. Maximum Collector Saturation Voltage Characteristics
www.onsemi.com
4
MMBT2369L, MMBT2369AL
200
100
50
T = 125°C
J
V
= 1 V
CE
75°C
25°C
T = 25°C and 75°C
J
-15°C
-55°C
20
1
2
5
10
I , COLLECTOR CURRENT (mA)
20
50
100
C
Figure 11. Minimum Current Gain Characteristics
1.4
1.2
1.0
0.8
β = 10
T = 25°C
J
F
MAX V
MIN V
BE(sat)
BE(sat)
0.6
0.4
0.2
MAX V
CE(sat)
1
2
5
10
20
50
100
I , COLLECTOR CURRENT (mA)
C
Figure 12. Saturation Voltage Limits
www.onsemi.com
5
MMBT2369L, MMBT2369AL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
STYLE 6:
PIN 1. BASE
END VIEW
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
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◊
MMBT2369LT1/D
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