MMBT2369LT1 [LRC]
Switching Transistors(NPN Silicon); 开关晶体管（ NPN硅）
| 型号： | MMBT2369LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Switching Transistors(NPN Silicon) |
| 文件： | 总5页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
SwitchingTransistors
NPN Silicon
3
COLLECTOR
MMBT2369LT1
1
MMBT2369ALT1
BASE
2
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CES
V CBO
V EBO
I C
Value
15
Unit
1
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Vdc
Vdc
2
40
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
40
Vdc
4.5
200
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
mW
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
2.4
mW/°C
°C/W
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
TJ , Tstg
–55 to +150
°C
DEVICE MARKING
MMBT2369LT1 = M1J, MMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 10 mAdc, I B = 0)
V (BR)CEO
V (BR)CES
V (BR)CBO
15
40
40
4.5
—
—
—
—
—
—
—
—
Vdc
Vdc
Vdc
Collector–Emitter Breakdown Voltage
(I C = 10 µAdc, V BE = 0)
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
V (BR)EBO
I CBO
Vdc
Collector Cutoff Current( V CB = 20Vdc, I E = 0)
( V CB = 20Vdc, I E = 0, T A=150 °C)
Collector Cutoff Current
—
—
—
—
0.4
30
µAdc
I CES
—
—
0.4
µAdc
( V CE = 20Vdc, V BE = 0)
MMBT2369A
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
< 300 µs, Duty Cycle < 2.0%.
O6–1/5
LESHAN RADIO COMPANY, LTD.
MMBT2369LT1 MMBT2369ALT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain(3)
hFE
––
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 10 mAdc, V CE = 0.35 Vdc)
(I C = 10 mAdc, V CE = 0.35 Vdc,T A= –55°C )
(I C = 30 mAdc, V CE = 0.4Vdc)
(I C = 100mAdc, V CE = 2.0 Vdc)
(I C = 100mAdc, V CE = 1.0 Vdc)
Collector–Emitter Saturation Voltage(3)
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 10 mAdc, I B = 1.0 mAdc, T A= + 125°C
(I C = 30mAdc, I B = 3.0 mAdc)
(I C = 100mAdc, I B = 10 mAdc)
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
MMBT2369A
40
––
40
20
30
20
20
––
––
––
––
––
––
––
120
120
––
––
––
––
––
VCE(sat)
Vdc
Vdc
MMBT2369
––
––
––
––
––
––
––
––
––
––
0.25
0.20
0.30
0.25
0.50
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
)
V BE(sat)
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
0.7
––
––
––
––
––
––
––
0.85
1.02
1.15
1.60
(I C = 10 mAdc, I B = 1.0 mAdc, T A= – 55°C
(I C = 30 mAdc, I B = 3.0 mAdc)
)
(I C = 100 mAdc, I B = 10 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
C obo
hfe
––
––
—
4.0
—
pF
—
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
Small–Signal Current Gain
5.0
(V CE=10 Vdc, I C = 10 mAdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Storage Time
t s
—
—
—
5.0
8.0
10
13
12
18
ns
ns
ns
(I B1 = I B2 = I C = 10 mAdc)
Turn–On Time
t on
t off
(V CC = 3.0 Vdc, I C = 10 mAdc, I B1 = 3.0 mAdc)
Turn–Off Time
(V CC = 3.0 Vdc, I C = 10 mAdc, I B1 = 3.0 mAdc, I B2 = 1.5 mAdc)
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
<
<
O6–2/5
LESHAN RADIO COMPANY, LTD.
MMBT2369LT1 MMBT2369ALT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
270 Ω
270 Ω
t 1
t 1
3 V
3 V
+10.6 V
0
+10.75V
0
–1.5 V
C s * < 4 pF
3.3 k
< 1 ns
3.3 k
C s * < 4 pF
–9.15 V
< 1 ns
PULSE WIDTH (t 1 ) = 300 ns
DUTY CYCLE = 2%
PULSE WIDTH (t 1 ) = 300 ns
DUTY CYCLE = 2%
Figure 3. t off Circuit — 10 mA
Figure 1. t on Circuit — 10 mA
95 Ω
95 Ω
t 1
t 1
10V
10V
1 k
+10.8 V
+11.4 V
0
0
–8.6 V
1 k
C s * < 12 pF
–2 V
C s * < 12 pF
< 1 ns
< 1 ns
1N916
PULSE WIDTH (t 1 ) BETWEEN
10AND 500 µs
PULSE WIDTH (t 1 ) = 300 ns
DUTY CYCLE = 2%
DUTY CYCLE = 2%
Figure 2. t on Circuit — 100 mA
Figure 4. t off Circuit — 100 mA
TURN–ON WAVEFORMS
TO OSCILLOSCOPE
INPUT IMPEDANCE = 50 Ω
V in
0
0.1 µF
RISE TIME = 1 ns
V out
220 Ω
10%
90%
3.3 kΩ
TURN–OFF WAVEFORMS
V out
V in
0
10%
t on
V in
3.3 k
50 Ω
0.0023 µF
0.0023 µF
0.005 µF
0.1 µF
PULSE GENERATOR
V in RISE TIME < 1 ns
90%
V out
50 Ω
0.005 µF
0.1 µF
SOURCE IMPEDANCE = 50 Ω
PW 300 ns
V BB = +12 V
V in = –15 V
>
V BB
V CC = 3 V
t off
DUTY CYCLE < 2%
Figure 5. Turn–On and Turn–Off Time Test Circuit
6
5
4
100
LIMIT
T J = 25°C
β
F = 10
TYPICAL
50
V CC = 10 V
V
OB = 2 V
C ib
t f
C ob
t r (V CC = 3 V)
20
3
2
V
CC = 10 V
t r
10
5
t s
t d
2
1
0.1
0.2
0.5
1.0
2.0
5.0
10
1
2
5
10
20
50
100
REVERSE BIAS (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 6. Junction Capacitance Variations
Figure 7. Typical Switching Times
O6–3/5
LESHAN RADIO COMPANY, LTD.
MMBT2369LT1 MMBT2369ALT1
500
Q T,β F =10
V CC = 10 V
25°C
200
100
100°C
Q T,β =40
F
VALUES REFER TO
I C = 10 mA TEST
270
t 1
3 V
+5 V
10 pF MAX
∆V
0
C s * < 4 pF
< 1 ns
4.3 k
50
20
10
Q A ,V CC=10V
PULSE WIDTH (t 1 ) = 5 ms
DUTY CYCLE = 2%
Q A,V CC =3 V
Figure 9. Q T Test Circuit
1
2
5
10
20
50
100
I
C , COLLECTOR CURRENT (mA)
Figure 8. Maximum Charge Data
980
t 1
10 V
+6 V
C < C OPT
C = 0
0
500
–4 V
C
C OPT
C s * < 3 pF
< 1 ns
PULSE WIDTH (t 1 ) = 300 ns
DUTY CYCLE = 2%
TIME
Figure 11. Storage Time Equivalent Test Circuit
Figure 10. Turn–Off Waveform
1.0
TJ= 25°C
0.8
0.6
0.4
0.2
IC=10 mA
I C=3mA
IC=30mA
I C=100mA
I C=50mA
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
I B , BASE CURRENT (mA)
Figure 12. Maximum Collector Saturation Voltage Characteristics
O6–4/5
LESHAN RADIO COMPANY, LTD.
MMBT2369LT1 MMBT2369ALT1
200
100
50
T J = 125°C
75°C
V CE = 1 V
25°C
TJ= 25°C and 75°C
–15°C
–55°C
20
1
2
5
10
20
50
100
I C , COLLECTOR CURRENT (mA)
Figure 13. Minimum Current Gain Characteristics
1.4
1.0
0.5
β
F = 10
(25°C to 125°C)
(–55°C to +25°C)
1.2
1.0
0.8
0.6
0.4
0.2
T J = 25°C
θ
VC for V CE(sat)
MAX V BE(sat)
MIN V BE(sat)
0
–0.5
–0.1
–1.5
–2.0
–2.5
APPROXIMATE DEVIATION
FROM NOMINAL
–55°C to +25°C
±0.15 mV/°C
±0.4 mV/°C
25°C to 125°C
θ VC
θ VB
±0.15 mV/°C
±0.3 mV/°C
(–55°C to +25°C)
(25°C to 125°C)
θ VB for V BE(sat)
MAX V CE(sat)
1
2
5
10
20
50
100
0
10
20
30
40
50
60
70
80
90
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 15. Typical Temperature Coefficients
Figure 14. Saturation Voltage Limits
O6–5/5
相关型号：
MMBT2369LT1G
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN
ROCHESTER
MMBT2369LT3
TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN, BIP General Purpose Small Signal
ONSEMI
MMBT2369_NL
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB, SOT-23, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明