MMBT2369LT1G_09 [ONSEMI]
Switching Transistors; 开关晶体管
| 型号： | MMBT2369LT1G_09 |
| 厂家： | 
ONSEMI |
| 描述： | Switching Transistors |
| 文件： | 总6页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT2369LT1G,
MMBT2369ALT1G
Switching Transistors
NPN Silicon
http://onsemi.com
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
MAXIMUM RATINGS
1
BASE
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
CEO
15
Vdc
2
EMITTER
Collector−Emitter Voltage
Collector−Base Voltage
V
40
40
Vdc
Vdc
CES
CBO
EBO
V
V
Emitter−Base Voltage
4.5
200
Vdc
3
SOT−23
CASE 318
STYLE 6
Collector Current − Continuous
THERMAL CHARACTERISTICS
I
C
mAdc
1
2
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
JA
xxx M G
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
G
A
Derate above 25°C
1
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
xxx = M1J or 1JA
T , T
J
−55 to +150
M
= Date Code*
stg
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
Package
Shipping
MMBT2369LT1G
SOT−23 3000/Tape & Reel
(Pb−Free)
MMBT2369ALT1G
SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
September, 2009 − Rev. 7
MMBT2369LT1/D
MMBT2369LT1G, MMBT2369ALT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
V
Vdc
Vdc
Vdc
Vdc
mAdc
(BR)CEO
(I = 10 mAdc, I = 0)
15
40
40
4.5
−
−
−
−
−
−
−
−
C
B
Collector−Emitter Breakdown Voltage
(I = 10 mAdc, V = 0)
V
(BR)CES
(BR)CBO
(BR)EBO
C
BE
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
E
C
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
CBO
−
−
−
−
0.4
30
CB
E
(V = 20 Vdc, I = 0, T = 150°C)
CB
E
A
Collector Cutoff Current
(V = 20 Vdc, V = 0)
I
mAdc
CES
MMBT2369A
−
−
0.4
CE
BE
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
−
(I = 10 mAdc, V = 1.0 Vdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
40
−
40
20
30
20
20
−
−
−
−
−
−
−
120
120
−
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 0.35 Vdc)
C
CE
(I = 10 mAdc, V = 0.35 Vdc, T = −55°C)
−
C
CE
A
(I = 30 mAdc, V = 0.4 Vdc)
−
C
CE
(I = 100 mAdc, V = 2.0 Vdc)
−
C
CE
(I = 100 mAdc, V = 1.0 Vdc)
MMBT2369A
−
C
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
−
−
−
−
−
−
−
−
−
−
0.25
0.20
0.30
0.25
0.50
C
B
(I = 10 mAdc, I = 1.0 mAdc)
C
B
(I = 10 mAdc, I = 1.0 mAdc, T = +125°C)
C
C
B
B
A
(I = 30 mAdc, I = 3.0 mAdc)
(I = 100 mAdc, I = 10 mAdc)
C
B
Base−Emitter Saturation Voltage (Note 3)
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
MMBT2369/A
MMBT2369A
MMBT2369A
MMBT2369A
0.7
−
−
−
−
−
−
−
0.85
1.02
1.15
1.60
C
B
(I = 10 mAdc, I = 1.0 mAdc, T = −55°C)
C
C
B
B
A
(I = 30 mAdc, I = 3.0 mAdc)
(I = 100 mAdc, I = 10 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
C
pF
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
−
−
−
4.0
CB
E
Small Signal CurrentGain
(I = 10 mAdc, V = 10 Vdc, f = 100 MHz)
h
−
fe
5.0
−
C
CE
SWITCHING CHARACTERISTICS
Storage Time
t
ns
ns
ns
s
(I = I = I = 10 mAdc)
−
−
−
5.0
8.0
10
13
12
18
B1
B2
C
Turn−On Time
t
on
off
(V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc)
CC
C
B1
Turn−Off Time
t
(V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc, I = 1.5 mAdc)
CC
C
B1
B2
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
2
MMBT2369LT1G, MMBT2369ALT1G
270 W
95 W
t
1
t
1
3 V
+10.6 V
0
10 V
+10.8 V
-2 V
0
-1.5 V
< 1 ns
3.3 k
C * < 4 pF
s
< 1 ns
1 k
C * < 12 pF
s
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors.
Figure 2. ton Circuit − 100 mA
Figure 1. ton Circuit − 10 mA
95 W
270 W
t
1
t
1
10 V
+11.4 V
0
+10.75 V
0
-9.15 V
-8.6 V
1 k
C * < 12 pF
s
3.3 k
C * < 4 pF
s
< 1 ns
< 1 ns
1N916
PULSE WIDTH (t ) BETWEEN
1
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
10 AND 500 ms
DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors.
Figure 4. toff Circuit − 100 mA
Figure 3. toff Circuit − 10 mA
TO OSCILLOSCOPE
INPUT IMPEDANCE = 50 W
RISE TIME = 1 ns
TURN-ON WAVEFORMS
V
0
in
0.1 mF
220 W
10%
90%
V
out
TURN-OFF WAVEFORMS
V
out
3.3 kW
V
in
0
10%
90%
= +12 V
t
on
V
in
3.3 k
50 W
0.0023 mF
0.0023 mF
V
out
PULSE GENERATOR
ꢀV RISE TIME < 1 ns
50 W
0.005 mF 0.005 mF
in
V
BB
ꢀSOURCE IMPEDANCE = 50 W
ꢀPW ≥ 300 ns
ꢀDUTY CYCLE < 2%
+
-
+
V
CC
0.1 mF 0.1 mF
V
BB
= 3 V
-
t
off
V = -15 V
in
Figure 5. Turn−On and Turn−Off Time Test Circuit
http://onsemi.com
3
MMBT2369LT1G, MMBT2369ALT1G
6
5
100
LIMIT
T = 25°C
J
β = 10
F
TYPICAL
50
V
= 10 V
= 2 V
CC
V
OB
4
3
C
t
f
ib
t (V = 3 V)
CC
r
C
ob
20
10
5
V
CC
= 10 V
t
r
2
t
s
t
d
1
2
0.1
0.2
0.5
1.0
2.0
5.0
10
1
2
5
10
20
50
100
REVERSE BIAS (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 6. Junction Capacitance Variations
Figure 7. Typical Switching Times
980
t
1
10 V
C < C
+6 V
OPT
C = 0
0
-4 V
C
C
OPT
< 1 ns
500
C * < 3 pF
s
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
TIME
Figure 8. Turn−Off Waveform
Figure 9. Storage Time Equivalent Test Circuit
1.0
0.8
T = 25°C
J
I = 3 mA
C
I = 10 mA
C
I = 30 mA
C
I = 50 mA
C
I = 100 mA
C
0.6
0.4
0.2
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
I , BASE CURRENT (mA)
B
Figure 10. Maximum Collector Saturation Voltage Characteristics
http://onsemi.com
4
MMBT2369LT1G, MMBT2369ALT1G
200
100
50
T = 125°C
J
V
= 1 V
CE
75°C
25°C
T = 25°C and 75°C
J
-15°C
-55°C
20
1
2
5
10
I , COLLECTOR CURRENT (mA)
20
50
100
C
Figure 11. Minimum Current Gain Characteristics
1.4
1.2
1.0
0.8
β = 10
T = 25°C
J
F
MAX V
MIN V
BE(sat)
BE(sat)
0.6
0.4
0.2
MAX V
CE(sat)
1
2
5
10
20
50
100
I , COLLECTOR CURRENT (mA)
C
Figure 12. Saturation Voltage Limits
http://onsemi.com
5
MMBT2369LT1G, MMBT2369ALT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
b
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
2.10
2.40
2.64
0.083
0.094
0.104
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MMBT2369LT1/D
相关型号：
MMBT2369LT3
TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN, BIP General Purpose Small Signal
ONSEMI
MMBT2369_NL
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB, SOT-23, 3 PIN
FAIRCHILD
MMBT2484L99Z
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明