MMBT2484 [FAIRCHILD]
NPN General Purpose Amplifier; NPN通用放大器
| 型号： | MMBT2484 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN General Purpose Amplifier |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
PN2484
MMBT2484
C
E
TO-92
C
SOT-23
Mark: 1U
B
B
E
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µ to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
60
60
V
V
5.0
100
V
Collector Current - Continuous
mA
Operating and Storage Junction Temperature Range
-55 to +150
°
C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN2484
*MMBT2484
PD
Total Device Dissipation
625
5.0
350
2.8
mW
°
mW/ C
°
Derate above 25 C
Thermal Resistance, Junction to Case
83.3
°
Rθ
C/W
JC
Thermal Resistance, Junction to Ambient
200
357
Rθ
°C/W
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage
60
60
V
V
µ
IC = 10 A, IB = 0
BVCEO
Collector-Emitter Breakdown
Voltage*
IC = 10 mA, IE = 0
BVEBO
ICBO
Emitter-Base Breakdown Voltage
5.0
V
IC = 10 µA, IE = 0
Collector Cutoff Current
VCB = 45 V, IE = 0
VCB = 45 V, IE = 0, TA = 150°C
VEB = 5.0 V, IC = 0
10
10
10
nA
µA
nA
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V*
IC = 1.0 mA, IB = 0.1 mA
250
800
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.35
V
V
VCE(sat)
VBE(on)
IC = 1.0 mA, VCE = 5.0 V
0.95
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
Input Capacitance
Noise Figure
VCB =5.0 V, f = 140 kHz
VEB = 0.5 V, f = 140 kHz
6.0
6.0
3.0
pF
pF
dB
Cibo
NF
µ
IC = 10 A, VCE = 5.0 V,
RS = 10k,f = 1.0 kHz,BW =200 Hz
*Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤3.0%
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