MMBT2369LT1_07 [ONSEMI]
Switching Transistors NPN Silicon; 开关晶体管NPN硅型号: | MMBT2369LT1_07 |
厂家: | ONSEMI |
描述: | Switching Transistors NPN Silicon |
文件: | 总6页 (文件大小:88K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBT2369LT1,
MMBT2369ALT1
MMBT2369ALT1 is a Preferred Device
Switching Transistors
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
15
Unit
Vdc
1
BASE
V
CEO
V
40
Vdc
2
CES
CBO
EBO
EMITTER
V
V
40
Vdc
4.5
200
Vdc
3
Collector Current − Continuous
I
mAdc
C
SOT−23
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
1
Characteristic
Symbol
Max
Unit
2
Total Device Dissipation FR−5 Board
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
MARKING DIAGRAMS
Thermal Resistance, Junction−to−Ambient
R
q
JA
556
°C/W
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
xxx M G
G
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
1
T , T
J
−55 to +150
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
xxx = M1J or 1JA
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBT2369LT1
SOT−23 3000/Tape & Reel
MMBT2369LT1G
SOT−23 3000/Tape & Reel
(Pb−Free)
MMBT2369ALT1
SOT−23 3000/Tape & Reel
MMBT2369ALT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
January, 2007 − Rev. 5
MMBT2369LT1/D
MMBT2369LT1, MMBT2369ALT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
V
Vdc
Vdc
Vdc
Vdc
mAdc
(BR)CEO
(I = 10 mAdc, I = 0)
15
40
40
4.5
−
−
−
−
−
−
−
−
C
B
Collector−Emitter Breakdown Voltage
(I = 10 mAdc, V = 0)
V
(BR)CES
(BR)CBO
(BR)EBO
C
BE
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
E
C
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
CBO
−
−
−
−
0.4
30
CB
E
(V = 20 Vdc, I = 0, T = 150°C)
CB
E
A
Collector Cutoff Current
(V = 20 Vdc, V = 0)
I
mAdc
CES
MMBT2369A
−
−
0.4
CE
BE
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
−
(I = 10 mAdc, V = 1.0 Vdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
MMBT2369A
40
−
40
20
30
20
20
−
−
−
−
−
−
−
120
120
−
−
−
−
−
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 0.35 Vdc)
C
CE
(I = 10 mAdc, V = 0.35 Vdc, T = −55°C)
C
CE
A
(I = 30 mAdc, V = 0.4 Vdc)
C
CE
(I = 100 mAdc, V = 2.0 Vdc)
C
CE
(I = 100 mAdc, V = 1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
BE(sat)
MMBT2369
−
−
−
−
−
−
−
−
−
−
0.25
0.20
0.30
0.25
0.50
C
B
(I = 10 mAdc, I = 1.0 mAdc)
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
C
B
(I = 10 mAdc, I = 1.0 mAdc, T = +125°C)
C
B
A
(I = 30 mAdc, I = 3.0 mAdc)
C
B
(I = 100 mAdc, I = 10 mAdc)
C
B
Base−Emitter Saturation Voltage (Note 3)
(I = 10 mAdc, I = 1.0 mAdc)
V
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
0.7
−
−
−
−
−
−
0.85
1.02
1.15
1.60
C
B
(I = 10 mAdc, I = 1.0 mAdc, T = −55°C)
C
B
A
(I = 30 mAdc, I = 3.0 mAdc)
C
B
(I = 100 mAdc, I = 10 mAdc)
−
C
B
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
C
pF
−
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
CB
−
−
−
4.0
−
E
Small Signal CurrentGain
(I = 10 mAdc, V = 10 Vdc, f = 100 MHz)
h
fe
5.0
C
CE
SWITCHING CHARACTERISTICS
Storage Time
t
ns
ns
ns
s
(I = I = I = 10 mAdc)
−
−
−
5.0
8.0
10
13
12
18
B1
B2
C
Turn−On Time
t
t
on
off
(V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc)
CC
C
B1
Turn−Off Time
(V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc, I = 1.5 mAdc)
CC
C
B1
B2
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
MMBT2369LT1, MMBT2369ALT1
270 W
270 W
t
1
t
1
3 V
+10.6 V
+10.75 V
0
−1.5 V
0
−9.15 V
< 1 ns
3.3 k
C * < 4 pF
s
3.3 k
C * < 4 pF
s
< 1 ns
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors.
Figure 1. ton Circuit − 10 mA
Figure 2. toff Circuit − 10 mA
95 W
t
1
95 W
t
1
10 V
+11.4 V
0
10 V
+10.8 V
−2 V
0
−8.6 V
1 k
C * < 12 pF
s
< 1 ns
< 1 ns
1 k
C * < 12 pF
s
1N916
PULSE WIDTH (t ) BETWEEN
1
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
10 AND 500 ms
DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors.
Figure 3. ton Circuit − 100 mA
Figure 4. toff Circuit − 100 mA
TO OSCILLOSCOPE
TURN−ON WAVEFORMS
INPUT IMPEDANCE = 50 W
RISE TIME = 1 ns
V
0
in
0.1 mF
220 W
10%
V
out
TURN−OFF WAVEFORMS
V
out
3.3 kW
90%
V
in
0
10%
90%
= +12 V
t
on
V
in
3.3 k
50 W
0.0023 mF
0.0023 mF
V
out
PULSE GENERATOR
ꢀV RISE TIME < 1 ns
50 W
0.005 mF 0.005 mF
in
V
V
BB
ꢀSOURCE IMPEDANCE = 50 W
ꢀPW ≥ 300 ns
ꢀDUTY CYCLE < 2%
+
−
+
V
CC
0.1 mF 0.1 mF
V
= 3 V
BB
−
t
off
= −15 V
in
Figure 5. Turn−On and Turn−Off Time Test Circuit
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3
MMBT2369LT1, MMBT2369ALT1
100
6
5
LIMIT
TYPICAL
50
β = 10
T = 25°C
J
F
V
= 10 V
= 2 V
CC
OB
V
4
3
C
t
f
ib
t (V = 3 V)
CC
r
C
ob
20
10
5
V
= 10 V
CC
t
r
2
t
s
t
d
2
1
1
2
5
10
20
50
100
0.1
0.2
0.5
1.0
2.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
REVERSE BIAS (VOLTS)
Figure 7. Typical Switching Times
Figure 6. Junction Capacitance Variations
980
t
1
10 V
C < C
+6 V
OPT
C = 0
0
−4 V
C
C
OPT
< 1 ns
500
C * < 3 pF
s
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
TIME
Figure 8. Turn−Off Waveform
Figure 9. Storage Time Equivalent Test Circuit
http://onsemi.com
4
MMBT2369LT1, MMBT2369ALT1
1.0
0.8
T = 25°C
J
I = 3 mA
C
I = 10 mA
C
I = 30 mA
C
I = 50 mA
C
I = 100 mA
C
0.6
0.4
0.2
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
I , BASE CURRENT (mA)
B
Figure 10. Maximum Collector Saturation Voltage Characteristics
200
100
50
T = 125°C
J
V
= 1 V
CE
75°C
25°C
T = 25°C and 75°C
J
−15°C
−55°C
20
1
2
5
10
I , COLLECTOR CURRENT (mA)
20
50
100
C
Figure 11. Minimum Current Gain Characteristics
1.4
1.2
1.0
0.8
β = 10
T = 25°C
J
F
MAX V
MIN V
BE(sat)
BE(sat)
0.6
0.4
0.2
MAX V
CE(sat)
1
2
5
10
20
50
100
I , COLLECTOR CURRENT (mA)
C
Figure 12. Saturation Voltage Limits
http://onsemi.com
5
MMBT2369LT1, MMBT2369ALT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
b
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
E
2.10
2.40
2.64
0.083
0.094
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT2369LT1/D
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