MMBT2369L [ONSEMI]
Switcing Transistors; Switcing晶体管
| 型号： | MMBT2369L |
| 厂家： | 
ONSEMI |
| 描述： | Switcing Transistors |
| 文件： | 总8页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT2369LT1,
MMBT2369ALT1
MMBT2369ALT1 is a Preferred Device
Switching Transistors
NPN Silicon
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MAXIMUM RATINGS
Rating
Symbol
Value
15
Unit
Vdc
COLLECTOR
3
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
V
CEO
V
40
Vdc
CES
CBO
EBO
V
V
40
Vdc
1
BASE
Emitter–Base Voltage
4.5
200
Vdc
Collector Current – Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
2
EMITTER
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
P
D
225
mW
(Note 1) T = 25°C
3
A
Derate above 25°C
1.8
mW/°C
°C/W
1
Thermal Resistance,
Junction to Ambient
R
556
q
JA
2
Total Device Dissipation Alumina
P
300
mW
SOT–23
CASE 318
STYLE 6
D
Substrate, (Note 2) T = 25°C
A
Derate above 25°C
2.4
mW/°C
°C/W
Thermal Resistance,
Junction to Ambient
R
417
q
JA
MARKING DIAGRAMS
Junction and Storage Temperature
T , T
–55 to
+150
°C
J
stg
1. FR–5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
M1J X
1JA X
MMBT2369LT1
MMBT2369ALT1
M1J, 1JA = Specific Device Code
= Date Code
X
ORDERING INFORMATION
Device
Package
Shipping
MMBT2369LT1
MMBT2369ALT1
SOT–23 3000/Tape & Reel
SOT–23 3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
May, 2002 – Rev. 3
MMBT2369LT1/D
MMBT2369LT1, MMBT2369ALT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 3)
(I = 10 mAdc, I = 0)
V
Vdc
Vdc
Vdc
Vdc
µAdc
(BR)CEO
15
40
40
4.5
–
–
–
–
–
–
–
–
C
B
Collector–Emitter Breakdown Voltage
(I = 10 µAdc, V = 0)
V
(BR)CES
(BR)CBO
(BR)EBO
C
BE
Collector–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
C
E
Emitter–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
E
C
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
CBO
–
–
–
–
0.4
30
CB
E
(V = 20 Vdc, I = 0, T = 150°C)
CB
E
A
Collector Cutoff Current
(V = 20 Vdc, V = 0)
I
µAdc
CES
MMBT2369A
–
–
0.4
CE
BE
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
–
(I = 10 mAdc, V = 1.0 Vdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
40
–
–
–
–
–
–
–
–
120
120
–
–
–
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 0.35 Vdc)
40
20
30
20
20
C
CE
(I = 10 mAdc, V = 0.35 Vdc, T = –55°C)
C
CE
A
(I = 30 mAdc, V = 0.4 Vdc)
C
CE
(I = 100 mAdc, V = 2.0 Vdc)
–
–
C
CE
(I = 100 mAdc, V = 1.0 Vdc)
MMBT2369A
C
CE
Collector–Emitter Saturation Voltage (Note 3)
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
–
–
–
–
–
–
–
–
–
–
0.25
0.20
0.30
0.25
0.50
C
B
(I = 10 mAdc, I = 1.0 mAdc)
C
B
(I = 10 mAdc, I = 1.0 mAdc, T = +125°C)
C
B
A
(I = 30 mAdc, I = 3.0 mAdc)
C
B
(I = 100 mAdc, I = 10 mAdc)
C
B
Base–Emitter Saturation Voltage (Note 3)
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
0.7
–
–
–
–
–
–
0.85
1.02
1.15
1.60
C
B
(I = 10 mAdc, I = 1.0 mAdc, T = –55°C)
C
B
A
(I = 30 mAdc, I = 3.0 mAdc)
C
B
(I = 100 mAdc, I = 10 mAdc)
–
C
B
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
C
pF
–
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
–
–
–
4.0
–
CB
E
Small Signal CurrentGain
(I = 10 mAdc, V = 10 Vdc, f = 100 MHz)
h
fe
5.0
C
CE
SWITCHING CHARACTERISTICS
Storage Time
t
ns
ns
ns
s
(I = I = I = 10 mAdc)
–
–
–
5.0
8.0
10
13
12
18
B1
B2
C
Turn–On Time
(V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc)
CC
t
t
on
C
B1
Turn–Off Time
off
(V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc, I = 1.5 mAdc)
CC
C
B1
B2
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
MMBT2369LT1, MMBT2369ALT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
270 Ω
270 Ω
t
t
1
1
3 V
+10.6 V
0
+10.75 V
0
-9.15 V
-1.5 V
< 1 ns
3.3 k
C * < 4 pF
s
3.3 k
C * < 4 pF
s
< 1 ns
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors.
Figure 1. ton Circuit – 10 mA
Figure 3. toff Circuit – 10 mA
95 Ω
95 Ω
t
1
t
1
10 V
10 V
+11.4 V
0
+10.8 V
-2 V
0
-8.6 V
1 k
C * < 12 pF
s
< 1 ns
1 k
C * < 12 pF
s
< 1 ns
1N916
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
PULSE WIDTH (t ) BETWEEN
1
10 AND 500 µs
DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors.
Figure 2. ton Circuit – 100 mA
Figure 4. toff Circuit – 100 mA
TO OSCILLOSCOPE
TURN-ON WAVEFORMS
INPUT IMPEDANCE = 50 Ω
RISE TIME = 1 ns
V
0
in
0.1 µF
220 Ω
10%
90%
V
out
TURN-OFF WAVEFORMS
V
out
3.3 kΩ
V
in
0
10%
90%
= +12 V
t
on
V
in
3.3 k
50 Ω
0.0023 µF
0.0023 µF
0.005 µF 0.005 µF
V
out
PULSE GENERATOR
ąV RISE TIME < 1 ns
50 Ω
in
V
V
BB
ąSOURCE IMPEDANCE = 50 Ω
ąPW ≥ 300 ns
ąDUTY CYCLE < 2%
+
-
+
V
CC
0.1 µF 0.1 µF
V
BB
= 3 V
-
t
off
= -15 V
in
Figure 5. Turn–On and Turn–Off Time Test Circuit
6
5
100
LIMIT
T = 25°C
β
V
V
= 10
J
F
TYPICAL
= 10 V
= 2 V
CC
OB
50
4
3
C
ib
t
f
t (V = 3 V)
CC
r
C
ob
20
10
5
V
= 10 V
CC
t
r
2
t
s
t
d
1
2
0.1
0.2
0.5
1.0
2.0
5.0
10
1
2
5
10
20
50
100
REVERSE BIAS (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 6. Junction Capacitance Variations
Figure 7. Typical Switching Times
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3
MMBT2369LT1, MMBT2369ALT1
500
Q , β = 10
V
CC
= 10 V
T
F
25°C
100°C
200
100
50
Q , β = 40
VALUES REFER TO
I = 10 mA TEST
C
T
F
270
t
1
3 V
10 pF MAX
+5 V
∆V
0
< 1 ns
C * < 4 pF
s
4.3 k
PULSE WIDTH (t ) = 5 µs
1
DUTY CYCLE = 2%
Q , V = 10 V
A CC
Q , V = 3 V
A CC
20
10
Figure 9. QT Test Circuit
1
2
5
10
20
50
100
I , COLLECTOR CURRENT (mA)
C
Figure 8. Maximum Charge Data
980
t
1
10 V
C < C
+6 V
OPT
C = 0
0
-4 V
C
C
OPT
< 1 ns
500
C * < 3 pF
s
PULSE WIDTH (t ) = 300 ns
1
DUTY CYCLE = 2%
TIME
Figure 10. Turn–Off Waveform
Figure 11. Storage Time Equivalent Test Circuit
1.0
0.8
T = 25°C
J
I
C
= 3 mA
I
C
= 10 mA
I
C
= 30 mA
I
C
= 50 mA
I = 100 mA
C
0.6
0.4
0.2
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
I , BASE CURRENT (mA)
B
Figure 12. Maximum Collector Saturation Voltage Characteristics
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4
MMBT2369LT1, MMBT2369ALT1
200
100
50
T = 125°C
J
V
= 1 V
CE
75°C
25°C
T = 25°C and 75°C
J
-15°C
-55°C
20
1
2
5
10
I , COLLECTOR CURRENT (mA)
20
50
100
C
Figure 13. Minimum Current Gain Characteristics
1.4
1.0
0.5
β
= 10
F
(25°C to 125°C)
(-55°C to +25°C)
T = 25°C
J
1.2
1.0
0.8
θ
for V
CE(sat)
VC
MAX V
MIN V
0
-0.5
-1.0
-1.5
BE(sat)
APPROXIMATE DEVIATION
FROM NOMINAL
-55°C to +25°C 25°C to 125°C
BE(sat)
θ
θ
±0.15 mV/°C
±0.4 mV/°C
±0.15 mV/°C
±0.3 mV/°C
VC
VB
(-55°C to +25°C)
(25°C to 125°C)
0.6
0.4
0.2
θ
for V
BE(sat)
VB
MAX V
-2.0
-2.5
CE(sat)
1
2
5
10
20
50
100
0
10
20
30
40
50
60
70
80 90
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 14. Saturation Voltage Limits
Figure 15. Typical Temperature Coefficients
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5
MMBT2369LT1, MMBT2369ALT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
determined by T
, the maximum rated junction
J(max)
temperature of the die, R , the thermal resistance from the
θJA
device junction to ambient, and the operating temperature,
T . Using the values provided on the data sheet for the
A
SOT–23 package, P can be calculated as follows:
• Always preheat the device.
D
• The delta temperature between the preheat and soldering
should be 100°C or less.*
T
J(max) – TA
Rθ
PD =
JA
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 225 milliwatts.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
150°C – 25°C
556°C/W
PD =
= 225 milliwatts
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
The 556°C/W for the SOT–23 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts.
There are other alternatives to achieving higher power
dissipation from the SOT–23 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad . Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
• After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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6
MMBT2369LT1, MMBT2369ALT1
PACKAGE DIMENSIONS
SOT–23 (TO–236)
CASE 318–08
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
C
B
1
2
4. 318-03 AND -07 OBSOLETE, NEW STANDARD
318-08.
V
G
INCHES
DIM MIN MAX
MILLIMETERS
MIN
2.80
1.20
0.89
0.37
1.78
MAX
3.04
1.40
1.11
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
H
J
D
K
0.0005 0.0040 0.013
0.0034 0.0070 0.085
K
L
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
0.35
0.89
2.10
0.45
S
V
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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7
MMBT2369LT1, MMBT2369ALT1
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
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Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
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For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
MMBT2369LT1/D
相关型号：
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FAIRCHILD
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