HGTG20N60A4 [ONSEMI]
IGBT，600V，SMPS;
| 型号： | HGTG20N60A4 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，SMPS 局域网 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - SMPS
600 V, 40 A
HGTG20N60A4
Description
The HGTG20N60A4 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a
bipolar transistor. This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low conduction
losses are essential. This device has been optimized for fast switching
applications, such as UPS, welder and induction heating.
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C
Features
• 40 A, 600 V @ T = 110°C
C
• Low Saturation Voltage: V
= 1.8 V @ I = 20 A
C
CE(sat)
G
• Typical Fall Time: 55 ns at T = 125°C
J
• Low Conduction Loss
E
• This is a Pb−Free Device
Applications
• UPS, Welder
E
C
G
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
20N60A4
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
20N60A4
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
February, 2020 − Rev. 3
HGTG20N60A4/D
HGTG20N60A4
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
C
Parameter
Symbol
Ratings
Unit
V
Collector to Emitter Voltage
BV
I
600
CES
C
Collector Current Continuous
TC = 25°C
TC = 110°C
70
A
40
A
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
I
280
20
A
CM
V
GES
GEM
V
V
30
V
Switching Safe Operating Area at T = 150°C (Figure 2)
SSOA
100 A at 600V
290
J
Power Dissipation Total
TC = 25°C
TC > 25°C
P
D
W
W/°C
°C
Power Dissipation Derating
2.32
Operating and Storage Junction Temperature Range
T
T
−55 to +150
J, STG
Maximum Lead Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s, See Techbrief 334
T
PKG
300
260
°C
°C
L
T
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Shipping
HGTG20N60A4
20N60A4
TO−247−3LD
450 / Tube
ELECTRICAL SPECIFICATIONS (T = 25°C, unless otherwise noted)
C
Parameter
Symbol
Test Conditions
= 250 ꢀ A, V = 0 V,
Min
600
20
−
Typ
Max
−
Unit
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
I
−
−
CES
ECS
C
GE
= −10 mA, V = 0 V
−
V
C
GE
V
= 600 V
T = 25°C
−
250
2.0
2.7
2.0
7.0
250
−
ꢀ A
mA
V
CES
CE
J
T = 125°C
−
−
J
Collector to Emitter Saturation Voltage
V
I
C
= 20 A, V = 15 V
T = 25°C
−
1.8
1.6
5.5
−
CE(SAT)
GE
J
T = 125°C
−
V
J
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
C
= 250 ꢀ A, V = 600 V
4.5
−
V
GE(TH)
CE
I
V
=
20 V
nA
A
GES
GE
SSOA
T = 150°C, R = 3 ꢁ ꢂ V = 15 V,
100
−
J
G
GE
L = 100 ꢀ H, V = 600 V
CE
Gate to Emitter Plateau Voltage
V
I
I
= 20 A, V = 300 V
−
−
−
−
−
−
−
−
−
8.6
142
182
15
−
162
210
−
V
GEP
C
C
CE
On−State Gate Charge
Q
= 20 A, V = 300 V
V
V
= 15 V
= 20 V
nC
nC
ns
ns
ns
ns
ꢀ J
ꢀ J
ꢀ J
g(ON)
CE
GE
GE
Current Turn−On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25°C,
J
d(ON)I
I
= 20 A,
CE
t
12
−
rI
d(OFF)I
V
V
R
= 390 V,
= 15 V,
CE
GE
G
Current Turn−Off Delay Time
Current Fall Time
t
73
−
= 3 ꢁ ꢂ ,
L = 500 ꢀ H,
Test Circuit (Figure 20)
t
fI
32
−
Turn−On Energy (Note 2)
Turn−On Energy (Note 2)
Turn−Off Energy (Note 3)
E
E
E
105
280
150
−
ON1
ON2
OFF
350
200
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2
HGTG20N60A4
ELECTRICAL SPECIFICATIONS (T = 25°C, unless otherwise noted) (continued)
C
Parameter
Current Turn−On Delay Time
Current Rise Time
Symbol
Test Conditions
Min
−
Typ
15
Max
21
Unit
ns
t
IGBT and Diode at T = 125°C,
d(ON)I
J
I
= 20 A,
CE
t
−
13
18
ns
rI
d(OFF)I
V
V
= 390 V,
= 15 V,
CE
GE
= 3 ꢁ ꢂ ,
Current Turn−Off Delay Time
Current Fall Time
t
−
105
55
135
73
ns
R
G
L = 500 ꢀ H,
Test Circuit (Figure 20)
t
fI
−
ns
Turn−On Energy (Note 2)
Turn−On Energy (Note 2)
Turn−Off Energy (Note 3)
Thermal Resistance, Junction−Case
E
ON1
E
ON2
E
OFF
115
510
330
−
−
ꢀ J
−
−
−
600
500
0.43
ꢀ J
ꢀ J
R
°C/W
ꢃ
JC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Turn−Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24−1 Method for
CE
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
3. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. E
is the turn−on loss of the IGBT only. E
ON1
ON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified
J
in Figure 20.
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3
HGTG20N60A4
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
100
80
60
40
20
0
120
V
= 15 V
GE
T = 150°C, R = 3 ꢁ, V = 15 V, L = 100 ꢀ H
DIE CAPPABILITY
J
G
GE
100
80
Package Limit
60
40
20
0
100
200
300
400
500
600
700
0
75
100
125
150
25
50
V
CE
, Collector to Emitter Voltage (V)
T , Case Temperature (°C)
C
Figure 2. Minimum Switching Safe Operating
Area
Figure 1. DC Collector Current vs. Case
Temperature
500
300
14
12
10
8
450
T = 125°C, R = 3 ꢁ, L = 500 ꢀ H, V = 390 V
J
G
CE
V
= 390 V, R = 3 ꢁ, T = 125°C
G J
CE
T
GE
/ 75°C
400
350
300
250
200
150
100
C
V
/ 15 V
I
sc
6
100
40
f
f
= 0.05 / (t
+ t
ON2
)
MAX1
MAX2
d(OFF)I
C
d(ON)I
4
t
sc
= (P − P ) / (E
+ E
)
D
OFF
P
= Conduction Dissipation
(Duty Factor = 50%)
= 0.43°C/W, See Notes
C
2
R
ꢃ
JC
0
11
12
13
14
15
50
10
10
20
30
40
5
V
GE
, Gate to Emitter Voltage (V)
I
, Collector to Emitter Current (A)
CE
Figure 3. Operating Frequency vs. Collector
to Emitter Current
Figure 4. Short Circuit Withstand Time
100
80
60
40
20
0
100
80
60
40
20
0
Duty Cycle < 0.5%, V = 12 V
GE
Duty Cycle < 0.5%, V = 15 V
GE
Pulse Duration = 250 ꢀ s
Pulse Duration = 250 ꢀ s
T = 125°C
J
T = 125°C
J
T = 25°C
T = 150°C
J
T = 150°C
J
T = 25°C
J
J
1.6
2.0
2.4
2.8
3.2
0.4
0.8
1.2
0
0.8
1.2
1.6
2.0
0
0.4
2.4
V
, Collector to Emitter Voltage (V)
V
CE
, Collector to Emitter Voltage (V)
CE
Figure 5. Collector to Emitter On−State
Figure 6. Collector to Emitter On−State
Voltage
Voltage
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4
HGTG20N60A4
TYPICAL PERFORMANCE CURVES (unless otherwise noted) (continued)
1400
1200
1000
800
600
400
200
0
800
R
= 3 ꢁ, L = 500 ꢀ H, V = 390 V
CE
G
R
= 3 ꢁ, L = 500 ꢀ H, V = 390 V
CE
G
700
600
500
400
300
200
100
0
T = 125°C, V = 12 V, V = 15 V
J
GE
GE
T = 125°C, V = 12 V or 15 V
J
GE
T = 25°C, V = 12 V or 15 V
J
GE
T = 25°C, V = 12 V, V = 15 V
J
GE
GE
10
15
20
25
35
5
30
40
40
15
25
30
35
5
10
20
I
, Collector to Emitter Current (A)
CE
I
, Collector to Emitter Current (A)
CE
Figure 8. Turn−Off Energy Loss vs. Collector
Figure 7. Turn−On Energy Loss vs. Collector
to Emitter Current
to Emitter Current
22
20
18
16
14
12
10
8
36
32
28
24
20
R
= 3 ꢁ, L = 500 ꢀ H, V = 390 V
CE
G
R
= 3 ꢁ, L = 500 ꢀ H, V = 390 V
CE
G
T = 25°C, T = 125°C, V = 12 V
J
J
GE
T = 25°C, T = 125°C, V = 12 V
J
J
GE
16
12
T = 25°C, T = 125°C, V = 15 V
J
J
GE
T = 25°C or T = 125°C, V = 15 V
8
4
J
J
GE
30
10
15
20
25
35
40
40
5
10
15
20
25
30
35
5
I
, Collector to Emitter Current (A)
CE
I
, Collector to Emitter Current (A)
CE
Figure 9. Turn−On Delay Time vs. Collector
Figure 10. Turn−On Rise Time vs. Collector
to Emitter Current
to Emitter Current
120
110
80
72
64
56
48
40
32
24
16
R
= 3 ꢁ, L = 500 ꢀ H, V = 390 V
CE
R
= 3 ꢁ, L = 500 ꢀ H, V = 390 V
CE
G
G
V
GE
= 12 V, V = 15 V, T = 125°C
GE J
T = 125°C, V = 12 V or 15 V
J
GE
100
90
80
70
60
T = 25°C, V = 12 V or 15 V
J
GE
V
GE
= 12 V, V = 15 V, T = 25°C
GE
J
20
25
30
35
40
5
10
15
40
15
20
25
30
35
10
5
I
, Collector to Emitter Current (A)
I
, Collector to Emitter Current (A)
CE
CE
Figure 12. Fall Time vs. Collector to Emitter
Current
Figure 11. Turn−Off Delay Time vs. Collector
to Emitter Current
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5
HGTG20N60A4
TYPICAL PERFORMANCE CURVES (unless otherwise noted) (continued)
16
240
200
Duty Cycle < 0.5%, V = 10 V
I
= 1 mA, R = 15 ꢁ, T = 25°C
CE
G(REF)
L
J
Pulse Duration = 250 ꢀ s
14
12
10
8
V
= 600 V
CE
V
CE
= 400 V
160
120
80
40
0
T = 25°C
J
V
CE
= 200 V
6
T = 125°C
J
4
T = −55°C
J
2
0
9
11
12
8
10
7
6
160
80
100
140
0
20
40
60
120
V
GE
, Gate to Emitter Voltage (V)
Q , Gate Charge (nC)
G
Figure 14. Gate Charge Waveforms
Figure 13. Transfer Characteristic
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T = 125°C, L = 500 ꢀ H, V = 390 V,
R
E
= 3 ꢁ, L = 500 ꢀ H, V = 390 V, V = 15 V
J
V
CE
G
CE
GE
= 15 V
= E
+ E
GE
TOTAL
TOTAL
ON2
OFF
E
= E + E
ON2 OFF
10
I
= 30 A
CE
I
= 30 A
CE
1
I
= 20 A
= 10 A
CE
I
= 20 A
= 10 A
CE
I
CE
I
CE
0.2
0
0.1
3
10
1000
100
R , Gate Resistance (ꢁ)
75
100
125
150
25
50
G
T , Case Temperature (°C)
Figure 15. Total Switching Loss vs. Case
Temperature
C
Figure 16. Total Switching Loss vs. Gate
Resistance
5
4
3
2
1
2.2
2.1
2.0
1.9
Frequency = 1 MHz
Duty Cycle < 0.5%, T = 25°C
J
Pulse Duration = 250 ꢀ s,
C
IES
I
= 30 A
= 20 A
CE
I
CE
C
OES
1.8
1.7
I
= 10 A
15
CE
C
RES
0
100
40
60
80
0
20
16
13
14
11
12
10
8
9
V
CE
, Collector to Emitter Voltage (V)
V
GE
, Gate to Emitter Voltage (V)
Figure 17. Capacitance vs. Collector to Emitter
Voltage
Figure 18. Collector to Emitter On−State
Voltage vs. Gate to Emitter Voltage
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6
HGTG20N60A4
TYPICAL PERFORMANCE CURVES (unless otherwise noted) (continued)
0
10
0.5
0.2
0.1
−1
10
t
1
0.05
P
D
0.02
0.01
t
2
Duty Factor, D = t /t
1
2
−2
10
Peak T = (P x Z
x R ) + T
ꢃ
JC C
ꢃ
J
D
JC
Single Pulse
−1
0
−4
−3
−2
−5
10
10
10
10
10
10
t , Rectangular Pulse Duration (s)
1
Figure 19. IGBT Normalized Transient Thermal Response, Junction to Case
TEST CIRCUIT AND WAVEFORMS
HGTG20N60A4D
DIODE TA49372
90%
10%
V
GE
E
ON2
L = 500 ꢀ H
E
OFF
V
CE
R
= 3 ꢁ
G
90%
10%
+
V
DD
= 390 V
I
CE
t
rI
−
t
d(OFF)I
t
fI
t
d(ON)I
Figure 21. Switching Test Waveforms
Figure 20. Inductive Switching Test Circuit
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7
HGTG20N60A4
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications,
with virtually no damage problems due to electrostatic
discharge. IGBTs can be handled safely if the following
basic precautions are taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8,
9 and 11. The operating frequency plot (Figure 3) of
a typical device shows f
or f
; whichever is
MAX1
MAX2
smaller at each point. The information is based on
measurements of a typical device and is bounded by the
maximum rated junction temperature.
f
is defined by f
= 0.05/(t
+ t
).
MAX1
MAX1
d(OFF)I
d(ON)I
Deadtime (the denominator) has been arbitrarily held to
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26”
10% of the on−state time for a 50% duty factor. Other
definitions are possible. t
and t
are defined in
d(OFF)I
d(ON)I
Figure 21. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
or equivalent.
T
.
JM
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example,
f
is defined by f
= (P − P )/(E
+ E
).
ON2
MAX2
MAX2
D
C
OFF
The allowable dissipation (P ) is defined by
P = (T − T )/R . The sum of device switching
D
D
JM
C
ꢃ
J
C
with a metallic wristband.
and conduction losses must not exceed P . A 50% duty
D
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
factor was used (Figure 3) and the conduction losses (P )
C
are approximated by P = (V x I )/2.
C
CE
CE
E
and E
are defined in the switching waveforms
ON2
OFF
5. Gate Voltage Rating − Never exceed
shown in Figure 21. E
is the integral of the instantaneous
ON2
the gate−voltage rating of V . Exceeding
GEM
power loss (I
x V ) during turn−on and E
is
CE
CE
OFF
the rated V can result in permanent damage
the integral of the instantaneous power loss (I x V
)
CE
GE
CE
to the oxide layer in the gate region.
during turn−off. All tail losses are included in the calculation
for E ; i.e., the collector current equals zero (I = 0).
6. Gate Termination − The gates of these devices
are essentially capacitors. Circuits that leave
the gate open−circuited or floating should be
avoided. These conditions can result in turn−on
of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection − These devices do not have
an internal monolithic Zener diode from gate
to emitter. If gate protection is required an external
Zener is recommended.
OFF
CE
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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