HGTG20N60B3D [ONSEMI]
600V，PT IGBT;
| 型号： | HGTG20N60B3D |
| 厂家： | 
ONSEMI |
| 描述： | 600V，PT IGBT 局域网 电动机控制 栅 瞄准线 双极性晶体管 |
| 文件： | 总9页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast
Diode
40 A, 600 V
HGTG20N60B3D
www.onsemi.com
The HGTG20N60B3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET
and the low on−state conduction loss of a bipolar transistor. The much
lower on−state voltage drop varies only moderately between 25°C and
150°C. The diode used in anti−parallel with the IGBT is the
RHRP3060.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential.
C
G
E
E
C
G
Formerly developmental type TA49016.
COLLECTOR
(BOTTOM
SIDE METAL)
Features
• 40 A, 600 V at T = 25°C
• Typical Fall Time 140 ns at 150°C
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti−Parallel Diode
• This is a Pb−Free Device
C
TO−247−3LD SHORT LEAD
CASE 340CK
JEDEC STYLE
MARKING DIAGRAM
$Y&Z&3&K
G20N60B3D
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
G20N60B3D = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
April, 2020 − Rev. 2
HGTG20N60B3D/D
HGTG20N60B3D
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
Parameter
Symbol
HGTG20N60B3D
Unit
V
Collector to Emitter Voltage
BV
600
600
CES
CGR
Collector to Gate Voltage, R = 1 MW
BV
V
GE
Collector Current Continuous
At T = 25°C
I
40
20
A
A
C
C25
At T = 110°C
I
C
C110
Average Diode Forward Current at 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
I
20
A
A
V
V
(AVG)
I
160
CM
V
20
GES
GEM
V
30
Switching Safe Operating Area at T = 150°C
SSOA
30 A at 600 V
C
Power Dissipation Total at T = 25°C
P
165
1.32
W
W/°C
°C
C
D
Power Dissipation Derating T > 25°C
C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
T , T
−40 to 150
260
J
STG
T
°C
L
Short Circuit Withstand Time (Note 2) at V = 15 V
t
4
ms
GE
SC
SC
Short Circuit Withstand Time (Note 2) at V = 10 V
t
10
ms
GE
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V = 360 V, T =125°C, R = 25 W
CE
C
G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
Parameter
Symbol
Test Condition
I = 250 mA, V = 0 V
C
Min
600
−
Typ
−
Max
−
Unit
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
BV
I
CES
GE
V
= BV
T
C
T
C
T
C
T
C
= 25°C
= 150°C
= 25°C
= 150°C
−
250
2.0
2.0
2.5
6.0
100
−
mA
mA
V
CES
CE
CES
−
−
Collector to Emitter Saturation Voltage
V
I
= I
C110
, V = 15 V
−
1.8
2.1
5.0
−
CE(SAT)
C
C
GE
−
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250 mA, V = V
GE
3.0
−
V
GE(TH)
CE
I
V
GE
=
20 V
nA
A
GES
SSOA
T
= 150°C, V = 15 V,
V
V
= 480 V
= 600 V
100
30
−
−
C
G
GE
CE
R
= 10 W, L = 45 mH
−
−
A
CE
Gate to Emitter Plateau Voltage
V
GEP
I
I
= I
, V = 0.5 BV
CES
8.0
80
105
25
20
220
140
475
1050
1.5
−
−
V
C
C110
CE
On−State Gate Charge
Q
= I
C110
,
V
V
= 15 V
= 20 V
−
105
135
−
nC
nC
ns
ns
ns
ns
mJ
mJ
V
G(ON)
C
V
GE
= 0.5 BV
CE
CES
−
GE
Current Turn−On Delay Time
Current Rise Time
t
T
CE
= 150°C,
−
d(ON)I
C
I
= I
,
C110
t
−
−
rI
d(OFF)I
V
V
= 0.8 BV
= 15 V,
,
CE
GE
G
CES
Current Turn−Off Delay Time
Current Fall Time
t
−
275
175
−
R
= 10 W,
L = 100 mH
t
fI
−
Turn−On Energy
E
ON
−
Turn−Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
E
OFF
−
−
V
EC
I
I
I
= 20 A
−
1.9
55
45
EC
EC
EC
t
rr
−
ns
ns
= 20 A, dI /dt = 100 A/ms
EC
= 1 A, dI /dt = 100 A/ms
−
−
EC
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2
HGTG20N60B3D
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
C
Parameter
Thermal Resistance
Symbol
Test Condition
Min
−
Typ
−
Max
0.76
1.2
Unit
°C/W
°C/W
R
IGBT
q
JC
Diode
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Turn−Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I = 0 A) The HGTG20N60B3D was tested per JEDEC standard No. 24−1
CE
Method for Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss. Turn−On
losses include diode losses.
TYPICAL PERFORMANCE CURVES
100
80
100
80
12 V
PULSE DURATION = 250 ms
DUTY CYCLE < 0.5%, V = 10 V
V
GE
= 15 V
V
GE
= 10 V
CE
PULSE DURATION = 250 ms,
DUTY CYCLE < 0.5%, T = 25°C
T
C
= 150°C
C
60
60
V
= 9 V
= 8.5 V
GE
T
C
= 25°C
C
V
GE
40
20
0
40
T
= −40°C
V
V
= 8.0 V
= 7.5 V
GE
GE
20
0
V
GE
= 7.0 V
0
2
4
6
8
10
4
6
8
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. TRANSFER CHARACTERISTICS
Figure 2. SATURATION CHARACTERISTICS
100
50
40
T
C
= 25°C
PULSE DURATION = 250 ms
DUTY CYCLE < 0.5%,
80
60
40
20
0
V
GE
= 15 V
V
GE
= 15 V
30
20
T
C
= −40°C
T
= 150°C
C
10
0
25
50
75
100
125
150
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 3. DC COLLECTOR CURRENT vs. CASE
TEMPERATURE
Figure 4. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
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3
HGTG20N60B3D
TYPICAL PERFORMANCE CURVES (continued)
5000
4000
3000
2000
1000
0
15
12
600
FREQUENCY = 1 MHz
CIES
480
V
= 600 V
CE
360
240
9
6
V
CE
= 400 V
COES
V
= 200 V
CE
T
C
= 25°C
120
0
3
0
I
= 1.685 mA
g(REF)
CRES
R
L
= 30 W
0
5
10
15
20
25
0
20
40
60
80
100
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
G
Figure 5. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
Figure 6. GATE CHARGE WAVEFORMS
500
400
100
T
J
= 150°C, R = 10 W, L = 100 mH
T = 150°C, R = 10 W, L = 100 mH
J G
G
50
40
300
200
V
CE
= 480 V, V = 15 V
GE
30
20
V
CE
= 480 V, V = 15 V
GE
10
100
0
10
20
30
40
0
10
20
30
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 7. TURN−ON DELAY TIME vs.
Figure 8. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
COLLECTOR TO EMITTER CURRENT
1000
100
10
100
T
J
= 150°C, R = 10 W, L = 100 mH
T
= 150°C, R = 10 W, L = 100 mH
G
J G
V
CE
= 480 V, V = 15 V
GE
V
CE
= 480 V, V = 15 V
GE
10
1
0
10
20
30
40
0
10
20
30
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 9. TURN−ON RISE TIME vs.
COLLECTOR TO EMITTER CURRENT
Figure 10. TURN−OFF FALL TIME vs.
COLLECTOR TO EMITTER CURRENT
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4
HGTG20N60B3D
TYPICAL PERFORMANCE CURVES (continued)
1400
1200
1000
800
2500
T
J
= 150°C, R = 10 W, L = 100 mH
T
= 150°C, R = 10 W, L = 100 mH
G
J G
2000
1500
1000
500
0
V
CE
= 480 V, V = 15 V
GE
V
CE
= 480 V, V = 15 V
GE
600
400
200
0
0
10
20
30
40
0
10
20
30
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 11. TURN−ON ENERGY LOSS vs.
Figure 12. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
COLLECTOR TO EMITTER CURRENT
120
500
100
T
R
= 150°C, T = 75°C, V = 15 V
T = 150°C, V = 15 V, R = 10 W
C GE G
J
C
GE
= 10 W, L = 100 mH
G
100
80
60
40
20
0
V
CE
= 480 V
f
f
= 0.05 / (t
+ t
d(ON)I
)
MAX1
MAX2
d(OFF)I
= (P − P ) / (E + E
)
D
C
ON
OFF
P
D
P
C
= ALLOWABLE DISSIPATION
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
= 0.76°C/W
R
q
JC
10
5
10
20
30
40
0
100
200
300
400
500
600
700
I
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
CE
Figure 13. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
Figure 14. SWITCHING SAFE OPERATING AREA
0
10
0.5
0.2
0.1
−1
10
0.05
0.02
t
1
P
0.01
D
−2
10
t
2
SINGLE PULSE
DUTY FACTOR, D = t / t
1
2
PEAK T = (P x Z
x R ) + T
q
JC C
q
J
D
JC
−3
10
−5
−4
10
−3
10
−2
−1
0
1
10
10
10
10
10
t1, RECTANGULAR PULSE DURATION (s)
Figure 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
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5
HGTG20N60B3D
TYPICAL PERFORMANCE CURVES (continued)
100
80
60
40
20
0
50
T
= 25°C, d /dt = 100 A/ms
C
IEC
t
rr
40
30
20
10
0
150°C
t
a
100°C
t
b
25°C
0
0.5
1.0
1.5
2.0
2.5
1
5
10
20
V
EC
, FORWARD VOLTAGE (V)
V
EC
, FORWARD CURRENT (A)
Figure 16. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
Figure 17. RECOVERY TIMES vs. FORWARD CURRENT
TEST CIRCUIT AND WAVEFORMS
90%
OFF
L = 100 mH
10%
ON
RHRP3060
V
GE
E
E
V
CE
R
G
= 10 W
90%
+
10%
d(OFF)I
I
V
DD
= 480 V
CE
−
t
t
rI
t
fI
t
d(ON)I
Figure 18. INDUCTIVE SWITCHING TEST CIRCUIT
Figure 19. SWITCHING TEST WAVEFORMS
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6
HGTG20N60B3D
HANDLING PRECAUTIONS FOR IGBTs
OPERATING FREQUENCY INFORMATION
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and discharge procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows f
or f
whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05 / (t
t
).
MAX1
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
10% of the on− state time for a 50% duty factor. Other
definitions are possible. t
Figure 19.
and t
are defined in
d(OFF)I
d(ON)I
Device turn−off delay can establish an additional
frequency limiting condition for an application other than
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband.
T
. t
is important when controlling output ripple
JM d(OFF)I
under a lightly loaded condition.
is defined by f = (P −P ) /(E
allowable dissipation (P ) is defined by P = (T − T ) /
f
+ E ). The
ON
MAX2
MAX2
D
C
OFF
D
D
JM
C
3. Tips of soldering irons should be grounded.
4. 1. Devices should never be inserted into or
removed from circuits with power on.
R
. The sum of device switching and conduction losses
qJC
must not exceed P . A 50% duty factor was used (Figure 13)
and the conduction losses (P ) are approximated by
D
C
5. Gate Voltage Rating − Never exceed the
P = (V x I ) / 2.
C CE CE
gate−voltage rating of V . Exceeding the rated
GEM
E
and E
are defined in the switching waveforms
ON
OFF
VGE can result in permanent damage to the oxide
layer in the gate region.
shown in Figure 19. E is the integral of the instantaneous
ON
power loss (I x V ) during turn−on and E is the
OFF
CE
CE
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open− circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic zener diode from gate to
emitter. If gate protection is required an external
zener is recommended.
integral of the instantaneous power loss during turn−off. All
tail losses are included in the calculation for E ; i.e. the
OFF
collector current equals zero (I = 0).
CE
ORDERING INFORMATION
Part Number
HGTG20N60B3D
Package
Brand
Shipping
450 Units / Tube
TO−247
G20N60B3D
NOTE: When ordering, use the entire part number.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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