HGTG20N60C3D [FAIRCHILD]
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode; 45A ， 600V ， UFS系列N沟道IGBT与反并联二极管超高速
| 型号： | HGTG20N60C3D |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 文件： | 总8页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTG20N60C3D
Data Sheet
December 2001
45A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Features
o
• 45A, 600V, T = 25 C
C
The HGTG20N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25 C and 150 C. The
IGBT used is development type TA49178. The diode used in
anti-parallel with the IGBT is the RHRP3060 (TA49063).
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
o
o
Packaging
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
JEDEC STYLE TO-247
E
C
G
Formerly developmental type TA49179.
Ordering Information
PART NUMBER
PACKAGE
BRAND
G20N60C3D
HGTG20N60C3D
TO-247
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3D Rev. B
HGTG20N60C3D
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTG20N60C3D
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
45
20
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
300
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
20A at 600V
164
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.32
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
-55 to 150
260
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
L
SC
SC
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
4
µs
µs
GE
GE
10
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
o
2. V
= 360V, T = 125 C, R = 10Ω.
J G
CE(PK)
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
600
-
CES
C
GE
o
I
V
= BV
CES
T
= 25 C
-
-
-
-
250
5.0
1.8
1.9
6.3
±250
-
µA
mA
V
CES
CE
C
C
C
C
o
T
T
T
= 150 C
o
Collector to Emitter Saturation Voltage
V
I
= I
= 25 C
-
1.4
1.5
4.8
-
CE(SAT)
C
C110
V
= 15V
GE
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V
= V
GE
3.4
-
V
GE(TH)
C CE
I
V
= ±20V
nA
A
GES
GE
o
SSOA
T = 150 C, R
10Ω, V
=
V
V
= 480V
= 600V
120
20
-
J
G
CE
= 15V,
L = 100µH
GE
-
-
A
CE
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= I
= I
, V
= 0.5 BV
-
-
-
-
-
-
-
-
-
8.4
91
-
V
GEP
CE
C110 CE
CES
Q
V
= 15V
110
145
32
nC
nC
ns
ns
ns
ns
µJ
µJ
G(ON)
CE
C110
GE
GE
V
= 0.5 BV
CE
CES
V
= 20V
o
122
28
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
J
d(ON)I
I
= I
CE
C110
t
24
28
rI
V
V
R
= 0.8 BV
= 15V
CE
CES
Current Turn-Off Delay Time
Current Fall Time
t
GE
151
55
210
98
d(OFF)I
= 10Ω
G
t
fI
L = 1mH
Test Circuit (Figure 19)
Turn-On Energy
E
500
500
550
700
ON
Turn-Off Energy (Note 3)
E
OFF
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3D Rev. B
HGTG20N60C3D
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
28
24
280
108
1.0
1.2
1.5
-
MAX
32
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 150 C
-
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
= I
C110
CE
t
28
ns
rI
V
V
= 0.8 BV
= 15V
CE
CES
Current Turn-Off Delay Time
Current Fall Time
t
GE
450
210
1.1
1.7
1.9
55
ns
d(OFF)I
R
= 10Ω
G
t
ns
fI
L = 1mH
Test Circuit (Figure 19)
Turn-On Energy
E
mJ
mJ
V
ON
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
E
OFF
V
I
I
I
= 20A
EC
EC
EC
EC
t
= 20A, dI /dt = 200A/µs
EC
ns
rr
= 2A, dI /dt = 200A/µs
EC
32
-
47
ns
o
Thermal Resistance Junction To Case
NOTES:
R
IGBT
0.76
1.2
C/W
θJC
o
Diode
-
C/W
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
50
40
30
20
10
0
140
120
100
80
V
= 15V
o
GE
T
= 150 C, R = 10Ω, V = 15V, L = 100µH
G GE
J
60
40
20
0
25
50
75
100
125
150
0
100
V
200
300
400
500
600
700
o
T
, CASE TEMPERATURE ( C)
, COLLECTOR TO EMITTER VOLTAGE (V)
C
CE
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3D Rev. B
HGTG20N60C3D
Typical Performance Curves Unless Otherwise Specified (Continued)
o
14
12
10
8
450
400
350
300
250
200
150
T
= 150 C, R = 10Ω,
G
J
o
V
= 360V, R = 10Ω, T = 125 C
G J
CE
L = 1mH, V
= 480V
CE
100
10
1
T
V
C
I
SC
GE
o
75 C 15V
o
75 C
10V
15V
10V
o
110 C
110 C
o
f
f
= 0.05 / (t
+ t
)
MAX1
d(OFF)I
d(ON)I
+ E )
OFF
6
= (P - P ) / (E
ON
MAX2
D
C
P
= CONDUCTION DISSIPATION
C
4
(DUTY FACTOR = 50%)
o
t
SC
R
= 0.76 C/W, SEE NOTES
ØJC
2
2
40
10
20
5
10
11
12
13
14
15
V
, GATE TO EMITTER VOLTAGE (V)
I
, COLLECTOR TO EMITTER CURRENT (A)
GE
CE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
100
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
= 10V
300
250
200
150
100
50
GE
DUTY CYCLE <0.5%, V = 15V
GE
PULSE DURATION = 250µs
80
60
40
20
0
o
T
= 25 C
C
o
o
T
= -55 C
T
= 25 C
C
C
o
T
= 150 C
C
o
T
= -55 C
C
o
T
= 150 C
C
0
0
1
2
3
4
5
6
0
2
4
6
8
10
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3.0
4.0
R
= 10Ω, L = 1mH, V
= 480V
CE
R
= 10Ω, L = 1mH, V
= 480V
CE
G
G
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2.5
2.0
1.5
1.0
0.5
0
o
o
T
= 25 C, T = 150 C, V
= 10V
J
J
GE
o
T
= 150 C; V
= 10V OR 15V
J
GE
o
T
J
= 25 C; V
GE
= 10V OR 15V
35
o
o
T
= 25 C, T = 150 C, V
= 15V
40
J
J
GE
35
, COLLECTOR TO EMITTER CURRENT (A)
5
10
I
15
20
25
30
40
5
10
I
15
20
30
25
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3D Rev. B
HGTG20N60C3D
Typical Performance Curves Unless Otherwise Specified (Continued)
50
45
40
35
30
25
20
200
175
150
125
100
75
R
= 10Ω, L = 1mH, V
= 480V
CE
R
G
= 10Ω, L = 1mH, V = 480V
CE
G
o
o
T
= 25 C, T = 150 C, V = 10V
GE
J
J
o
o
T
= 25 C, T = 150 C, V = 10V
GE
J
J
50
25
o
o
o
o
T
= 25 C, T = 150 C, V
= 15V
35 40
J
J
GE
T
= 25 C and T = 150 C, V
= 15V
J
J
GE
35
0
5
10
15
20
25
30
40
5
10
15
20
25
30
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
300
120
R
= 10Ω, L = 1mH, V
= 480V
CE
R
= 10Ω, L = 1mH, V
= 480V
G
G
CE
275
250
225
200
175
150
125
100
110
100
90
o
T
= 150 C, V
= 10V OR V = 15V
GE
J
GE
o
T
= 150 C, V
= 10V, V
= 15V
= 15V
J
GE
GE
80
o
T
= 25 C, V
= 10V, V
J
GE
GE
70
o
T
= 25 C, V
= 10V OR 15V
J
GE
60
50
40
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
16
300
o
I
= 1mA, R = 15Ω, T = 25 C
DUTY CYCLE <0.5%, V
= 10V
PULSE DURATION = 250µs
G (REF)
L
C
CE
14
12
10
8
250
200
150
100
50
o
T
= -55 C
C
V
= 600V
CE
o
T
= 150 C
C
V
= 200V
CE
6
V
= 400V
CE
o
4
T
= 25 C
C
2
0
0
0
10
20
30
40
50
60
70
80
90
100
5
6
7
8
9
10
11
12
13
14
15
V
, GATE TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
g
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3D Rev. B
HGTG20N60C3D
Typical Performance Curves Unless Otherwise Specified (Continued)
5
FREQUENCY = 1MHz
C
IES
4
3
2
1
0
C
C
OES
RES
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
0
10
0.5
0.2
0.1
-1
10
0.05
0.02
0.01
-2
10
10
t
1
SINGLE PULSE
P
D
DUTY FACTOR, D = t / t
1
2
t
2
PEAK T = (P X Z
X R
) + T
θJC C
J
D
θJC
-3
-5
10
-4
-3
-2
-1
1
0
10
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
100
90
80
70
60
50
40
30
20
10
0
45
o
= 25 C, dI /dt = 200A/µs
t
rr
a
T
C
EC
40
35
30
25
20
15
10
5
o
T
= -55 C
C
t
o
t
b
T
= 25 C
C
o
T
= 150 C
C
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
V
, FORWARD VOLTAGE (V)
I
EC
, FORWARD CURRENT (A)
EC
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3D Rev. B
HGTG20N60C3D
Test Circuit and Waveforms
HGTG20N60C3D
90%
OFF
10%
ON
V
GE
E
E
V
CE
L = 1mH
90%
R
= 10Ω
G
10%
d(OFF)I
+
I
CE
t
t
V
= 480V
rI
DD
t
fI
-
t
d(ON)I
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 20. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f ; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05/(t
MAX1
+ t ).
d(OFF)I d(ON)I
MAX1
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
and t are defined in Figure 20.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
limiting condition for an application other than T . t
JM d(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
3. Tips of soldering irons should be grounded.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
4. Devices should never be inserted into or removed from
circuits with power on.
MAX2
D
C
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V
. Exceeding the rated V can result in
GEM
GE
D
permanent damage to the oxide layer in the gate region.
the conduction losses (P ) are approximated by
C
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
P
= (V
CE
x I )/2.
CE
C
E
and E
are defined in the switching waveforms
OFF
ON
shown in Figure 20. E
is the integral of the instantaneous
ON
power loss (I
CE
x V ) during turn-on and E
is the
CE
integral of the instantaneous power loss (I
OFF
x V ) during
CE
CE
turn-off. All tail losses are included in the calculation for
; i.e., the collector current equals zero (I = 0).
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
E
OFF
CE
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3D Rev. B
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DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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