HGTG20N60B3D [FAIRCHILD]
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode; 40A ， 600V ， UFS系列N沟道IGBT与反并联二极管超高速
| 型号： | HGTG20N60B3D |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 文件： | 总7页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTG20N60B3D
Data Sheet
December 2001
40A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Features
o
• 40A, 600V at T = 25 C
C
The HGTG20N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
o
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150 C
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
o
o
drop varies only moderately between 25 C and 150 C. The
diode used in anti-parallel with the IGBT is the RHRP3060.
Packaging
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
JEDEC STYLE TO-247
E
C
G
Formerly developmental type TA49016.
Ordering Information
PART NUMBER
PACKAGE
BRAND
G20N60B3D
HGTG20N60B3D
TO-247
COLLECTOR
(BOTTOM SIDE METAL)
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B
HGTG20N60B3D
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTG20N60B3D
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
V
A
A
A
A
V
V
CES
Collector to Gate Voltage, R
= 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
GE
CGR
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
40
C25
C110
(AVG)
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
20
20
o
Average Diode Forward Current at 110 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
160
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
C
30A at 600V
165
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.32
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
-40 to 150
260
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
L
SC
SC
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
4
µs
µs
GE
GE
10
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
o
2. V
CE
= 360V, T = 125 C, R = 25Ω.
C G
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
= 250µA, V
= 0V
600
-
CES
C
GE
o
I
V
= BV
CES
T
= 25 C
-
-
-
-
250
2.0
2.0
2.5
6.0
±100
-
µA
mA
V
CES
CE
C
C
C
C
o
T
T
T
= 150 C
o
Collector to Emitter Saturation Voltage
V
I
= I
,
= 25 C
-
1.8
2.1
5.0
-
CE(SAT)
C
C110
= 15V
o
V
GE
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V
= V
GE
3.0
-
V
GE(TH)
C
CE
I
V
= ±20V
nA
A
GES
SSOA
GE
o
T
V
R
= 150 C
V
V
= 480V
= 600V
100
30
-
C
CE
CE
= 15V,
= 10Ω,
GE
-
-
A
G
L = 45µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
V
= I
, V
C110 CE
= 0.5 BV
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.0
80
105
25
20
220
140
475
1050
1.5
-
-
105
135
-
V
nC
nC
ns
ns
ns
ns
µJ
µJ
V
GEP
C
CES
Q
= I
,
V
V
= 15V
= 20V
G(ON)
C
C110
GE
= 0.5 BV
CE
CES
GE
o
Current Turn-On Delay Time
Current Rise Time
t
T
= 150 C,
d(ON)I
C
I
= I
C110
t
CE
-
rI
V
V
R
= 0.8 BV
CE
CES,
Current Turn-Off Delay Time
Current Fall Time
t
275
175
-
d(OFF)I
= 15V
GE
t
fI
= 10Ω,
G
Turn-On Energy
E
ON
L = 100µH
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
E
-
OFF
V
I
I
I
= 20A
1.9
55
45
0.76
1.2
EC
EC
EC
EC
t
= 20A, dI /dt = 100A/µs
EC
ns
ns
rr
= 1A, dI /dt = 100A/µs
EC
-
o
Thermal Resistance
NOTE:
R
IGBT
-
C/W
θJC
o
Diode
-
C/W
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for
CE
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B
HGTG20N60B3D
Typical Performance Curves
100
80
100
12V
PULSE DURATION = 250µs
V
= 10V
V
= 15V
GE
GE
DUTY CYCLE <0.5%, V
= 10V
CE
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, T = 25 C
80
60
40
20
0
o
C
o
T
= 150 C
o
C
V
= 9V
GE
60
T
= 25 C
C
V
= 8.5V
= 8.0V
GE
40
20
0
o
T
= -40 C
C
V
GE
V
= 7.5V
= 7.0V
GE
V
GE
4
6
8
10
12
0
2
4
6
8
10
V
, GATE TO EMITTER VOLTAGE (V)
GE
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
50
100
80
60
40
20
0
o
PULSE DURATION = 250µs
T
= 25 C
C
DUTY CYCLE <0.5%, V
GE
= 15V
40
30
20
V
= 15V
GE
o
T
= -40 C
C
o
T
= 150 C
C
10
0
25
50
100
, CASE TEMPERATURE ( C)
125
150
75
0
1
2
3
4
5
o
T
C
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 3. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5000
600
480
15
12
9
FREQUENCY = 1MHz
C
IES
4000
3000
2000
1000
0
V
= 600V
CE
360
240
120
V
= 400V
CE
6
C
C
OES
RES
V
= 200V
CE
o
T
= 25 C
3
C
I
= 1.685mA
g(REF)
= 30Ω
R
L
0
0
100
0
5
10
15
20
25
0
20
40
60
80
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Q
, GATE CHARGE (nC)
G
FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B
HGTG20N60B3D
Typical Performance Curves (Continued)
100
500
o
o
= 150 C, R = 10Ω, L = 100µH
T
= 150 C, R = 10Ω, L = 100µH
G
T
J
J
G
400
300
50
40
V
= 480V, V = 15V
GE
CE
30
20
200
100
V
= 480V, V = 15V
GE
CE
10
0
10
20
30
40
0
10
20
30
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURREN T
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
100
o
1000
T
= 150 C, R = 10Ω, L = 100µH
G
J
o
= 150 C, R = 10Ω, L = 100µH
T
J
G
V
= 480V, V = 15V
GE
CE
V
= 480V, V = 15V
GE
CE
100
10
1
10
0
10
20
30
40
0
10
20
30
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
1400
o
2500
o
= 150 C, R = 10Ω, L = 100µH
T
= 150 C, R = 10Ω, L = 100µH
G
T
J
J
G
1200
1000
800
600
400
200
0
2000
1500
1000
500
0
V
= 480V, V = 15V
GE
CE
V
= 480V, V = 15V
GE
CE
0
10
20
30
40
0
10
20
30
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B
HGTG20N60B3D
Typical Performance Curves (Continued)
500
o
o
T
= 150 C, T = 75 C, V
C
= 15V
120
J
GE
o
T
= 150 C, V = 15V, R = 10Ω
GE G
R
= 10Ω, L = 100mH
C
G
100
80
60
40
20
0
V
= 480V
CE
100
f
f
= 0.05/(t
+ t )
d(ON)I
+E )
OFF
MAX1
MAX2
d(OFF)I
= (P - P )/(E
D
C
ON
P
= ALLOWABLE DISSIPATION
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
o
D
C
P
R
= 0.76 C/W
θJC
10
5
10
20
30
40
0
100
200
300
400
500
600
700
I
, COLLECTOR TO EMITTER CURRENT (A)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURREN T
FIGURE 14. SWITCHING SAFE OPERATING AREA
0
10
0.5
0.2
0.1
-1
10
0.05
0.02
t
1
P
D
0.01
-2
t
10
2
SINGLE PULSE
DUTY FACTOR, D = t / t
1
2
PEAK T = (P X Z
X R
) + T
JC C
J
D
JC
θ
θ
-3
10
-5
-4
10
-3
10
-2
-1
0
1
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
100
80
60
40
20
0
50
o
T
= 25 C, dI /dt = 100A/µs
C
EC
t
40
30
20
10
0
rr
o
150 C
t
o
a
100 C
t
b
o
25 C
0
0.5
1.0
1.5
2.0
2.5
1
5
10
20
V
, FORWARD VOLTAGE (V)
I
, FORWARD CURRENT (A)
EC
EC
FIGURE 16. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 17. RECOVERY TIMES vs FORWARD CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B
HGTG20N60B3D
Test Circuit and Waveform
90%
OFF
L = 100µH
RHRP3060
10%
V
GE
E
E
ON
R
= 10Ω
V
I
G
CE
CE
90%
+
V
= 480V
10%
d(OFF)I
DD
-
t
t
rI
t
fI
t
d(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and discharge procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
current (I ) plots are possible using the information shown
CE
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows f
or
whichever is smaller at each point. The information is
MAX1
f
MAX2
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
is defined by f
= 0.05/(t
MAX1
t
).
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
of the on- state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
are possible. t
and t are defined in Figure 19.
d(ON)I
d(OFF)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers, the
hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
3. Tips of soldering irons should be grounded.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
MAX2
D
C
allowable dissipation (P ) is defined by P = (T - T )/R
The sum of device switching and conduction losses must
.
4. Devices should never be inserted into or removed from
circuits with power on.
D
D
JM θJC
C
not exceed P . A 50% duty factor was used (Figure 13)
5. Gate Voltage Rating - Never exceed the gate-voltage
D
and the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
permanent damage to the oxide layer in the gate region.
P
= (V
x I )/2.
C
CE
CE
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
E
and E
are defined in the switching waveforms
OFF
ON
shown in Figure 19. E
power loss (I
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for E ; i.e. the
collector current equals zero (I
is the integral of the instantaneous
ON
x V ) during turn-on and E
is the
CE
CE
OFF
OFF
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
= 0).
CE
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
相关型号：
HGTG20N60B3D_NL
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
FAIRCHILD
HGTG20N60C3DR
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-247
FAIRCHILD
HGTG20N60C3D_NL
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-247, LEAD FREE PACKAGE-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明