HGTG20N60A4D [FAIRCHILD]
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode; 600V ，开关电源系列N沟道IGBT与反并联二极管超高速
| 型号： | HGTG20N60A4D |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 文件： | 总9页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTG20N60A4D, HGT4E20N60A4DS
Data Sheet
APRIL 2002
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
Features
• >100kHz Operation At 390V, 20A
• 200kHz Operation At 390V, 12A
• 600V Switching SOA Capability
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
o
• Typical Fall Time . . . . . . . . . . . . . . . . .55ns at T = 125 C
J
• Low Conduction Loss
o
o
moderately between 25 C and 150 C. The IGBT used is the
development type TA49339. The diode used in anti-parallel
is the development type TA49372.
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
These IGBT’s are ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. These devices have been
optimized for high frequency switch mode power
supplies.
Packaging
JEDEC STYLE TO-247
E
C
G
Formerly Developmental Type TA49341.
Ordering Information
PART NUMBER
PACKAGE
TO-247
TO-268
BRAND
20N60A4D
20N60A4DS
HGTG20N60A4D
HGT4E20N60A4DS
TO-268AA
NOTE: When ordering, use the entire part number.
Symbol
C
C
G
G
E
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTG20N60A4D,
HGT4E20N60A4DS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
70
40
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
280
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
100A at 600V
290
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W
D
o
o
2.32
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
-55 to 150
260
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
J
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
600
-
-
CES
C
GE
o
I
V
= 600V
T = 25 C
J
-
250
3.0
2.7
2.0
7.0
±250
-
µA
mA
V
CES
CE
o
T = 125 C
J
-
-
-
o
Collector to Emitter Saturation Voltage
V
I
= 20A,
T = 25 C
J
1.8
1.6
5.5
-
CE(SAT)
C
V
= 15V
GE
o
T = 125 C
-
V
J
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V
= 600V
4.5
-
V
GE(TH)
C CE
I
V
= ±20V
nA
A
GES
GE
o
SSOA
T = 150 C, R = 3Ω, V
= 15V,
= 15V
100
-
J
G
GE
L = 100µH, V
= 600V
CE
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= 20A, V
= 20A,
= 300V
CE
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.6
142
182
15
-
162
210
-
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
GEP
C
Q
V
GE
g(ON)
C
V
= 300V
CE
V
= 20V
o
GE
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C,
J
d(ON)I
I
V
V
= 20A,
CE
t
12
-
rI
= 390V,
= 15V,
= 3Ω,
CE
GE
Current Turn-Off Delay Time
Current Fall Time
t
73
-
d(OFF)I
R
G
t
32
-
fI
L = 500µH,
Test Circuit Figure 24
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
E
E
E
105
280
150
15
-
ON1
ON2
OFF
350
200
21
18
135
73
-
o
t
IGBT and Diode at T = 125 C,
J
d(ON)I
I
V
R
= 20A,
CE
t
13
rI
= 390V, V
= 15V,
CE
GE
= 3Ω,
Current Turn-Off Delay Time
Current Fall Time
t
105
55
G
d(OFF)I
L = 500µH,
Test Circuit Figure 24
t
fI
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
E
E
E
115
510
330
ON1
ON2
OFF
600
500
©2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
o
Electrical Specifications T = 25 C, Unless Otherwise Specified (Continued)
J
PARAMETER
Diode Forward Voltage
SYMBOL
TEST CONDITIONS
= 20A
MIN
TYP
2.3
35
26
-
MAX
UNITS
V
V
I
I
I
-
-
-
-
-
-
-
EC
EC
EC
EC
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
NOTE:
t
= 20A, dI /dt = 200A/µs
EC
ns
rr
= 1A, dI /dt = 200A/µs
EC
-
ns
o
R
IGBT
0.43
1.9
C/W
θJC
o
Diode
-
C/W
2. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E is the turn-on loss of the IGBT only. E
ON1
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in
J
Figure 20.
Typical Performance Curves Unless Otherwise Specified
100
120
o
V
= 15V
GE
T
= 150 C, R = 3Ω, V = 15V, L = 100µH
G GE
DIE CAPABILITY
J
80
60
40
20
0
100
80
60
40
20
0
PACKAGE LIMIT
25
50
75
100
125
150
0
100
V
200
300
400
500
600
700
o
T
C
, CASE TEMPERATURE ( C)
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
14
12
10
8
450
400
350
300
250
o
T
V
GE
V
= 390V, R = 3Ω, T = 125 C
G J
C
o
CE
75 C
15V
300
I
SC
f
f
= 0.05 / (t
d(OFF)I
+ t
)
MAX1
MAX2
d(ON)I
+ E )
OFF
6
= (P - P ) / (E
100
40
D
C
ON2
P
= CONDUCTION DISSIPATION
C
4
200
150
100
t
SC
(DUTY FACTOR = 50%)
R
o
= 0.43 C/W, SEE NOTES
o
ØJC
2
T
= 125 C, R = 3Ω, L = 500µH, V
= 390V
J
G
CE
20
0
5
10
30
40
50
10
11
12
13
14
15
I
, COLLECTOR TO EMITTER CURRENT (A)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
100
80
60
40
20
0
100
80
60
40
20
0
DUTY CYCLE < 0.5%, V
GE
PULSE DURATION = 250µs
= 12V
DUTY CYCLE < 0.5%, V
= 15V
PULSE DURATION = 250µs
GE
o
T
= 125 C
o
= 125 C
J
T
J
o
o
o
o
T
= 25 C
T
= 150 C
T
= 25 C
T
= 150 C
J
J
J
J
0
0.4
V
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
0.4
V
0.8
1.2
1.6
2.0
2.4
2.8
, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1400
800
R
= 3Ω, L = 500µH, V
= 390V
CE
G
R
= 3Ω, L = 500µH, V
= 390V
G
CE
700
600
500
400
300
200
100
0
1200
1000
800
600
400
200
0
o
T
= 125 C, V
= 12V, V
= 15V
J
GE
GE
o
T
= 125 C, V
= 12V OR 15V
J
GE
o
T
= 25 C, V
= 12V OR 15V
35 40
J
GE
30
o
T
= 25 C, V
= 12V, V
30
= 15V
J
GE
GE
5
10
15
20
25
5
10
15
20
25
35
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
36
22
R
= 3Ω, L = 500µH, V
= 390V
CE
R
= 3Ω, L = 500µH, V = 390V
CE
G
G
32
28
24
20
16
12
8
20
18
16
14
12
10
8
o
o
T
= 25 C, T = 125 C, V = 12V
GE
J
J
o
o
T
= 25 C, T = 125 C, V
= 12V
GE
J
J
o
= 25 C, T = 125 C, V
GE
o
T
= 15V
35
J
J
o
o
T
= 25 C OR T = 125 C, V
= 15V
J
J
GE
4
5
10
15
20
25
30
35
40
5
10
15
20
25
30
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
80
72
64
56
48
40
32
24
16
120
110
100
90
R
= 3Ω, L = 500µH, V = 390V
CE
R
= 3Ω, L = 500µH,
V
= 390V
G
G
CE
o
V
= 12V, V
GE
= 15V, T = 125 C
J
o
GE
T
= 125 C, V
= 12V OR 15V
= 12V OR 15V
J
GE
o
T
= 25 C, V
J
GE
80
o
V
= 12V, V
GE
= 15V, T = 25 C
GE
J
70
60
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
16
240
o
I
G(REF)
=1mA,R =15Ω,T =25 C
L
J
DUTY CYCLE < 0.5%, V
= 10V
PULSE DURATION = 250µs
CE
14
12
10
8
200
160
120
80
V
= 600V
CE
V
= 400V
CE
o
T
= 25 C
V
= 200V
J
CE
6
o
T
= 125 C
J
4
o
T
= -55 C
40
J
2
0
0
6
0
20
40
60
80
100
120
140
160
7
8
9
10
11
12
Q
, GATE CHARGE (nC)
V
, GATE TO EMITTER VOLTAGE (V)
G
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
o
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
T
= 125 C, L = 500µH, V
= 390V, V = 15V
GE
J
CE
R
= 3Ω, L = 500µH, V
= 390V, V = 15V
GE
G
CE
E
= E
+ E
ON2 OFF
TOTAL
E
= E
+ E
ON2
TOTAL
OFF
10
I
= 30A
CE
I
= 30A
CE
1
I
I
= 20A
= 10A
CE
CE
I
I
= 20A
= 10A
CE
CE
0.1
3
10
100
, GATE RESISTANCE (Ω)
1000
25
50
75
100
125
150
o
R
T
, CASE TEMPERATURE ( C)
G
C
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
5
4
3
2
1
0
2.2
2.1
2.0
1.9
1.8
1.7
o
FREQUENCY = 1MHz
DUTY CYCLE < 0.5%, T = 25 C
J
PULSE DURATION = 250µs
C
IES
I
= 30A
= 20A
CE
I
I
CE
C
OES
= 10A
CE
C
RES
0
20
40
60
80
100
8
9
10
11
12
13
14
15
16
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
30
90
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
25
dI /dt = 200A/µs
EC
80
70
60
50
40
30
20
10
0
o
125 C t
rr
o
20
125 C t
o
b
125 C t
a
o
125 C
15
o
25 C
10
5
o
25 C t
rr
o
25 C t
a
o
25 C t
b
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
I
, FORWARD CURRENT (A)
V
, FORWARD VOLTAGE (V)
EC
EC
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
50
800
I
= 20A, V
= 390V
CE
EC
V
= 390V
CE
o
125 C, I
= 20A
40
30
20
10
0
EC
o
125 C t
600
400
200
0
a
o
125 C, I
= 10A
= 20A
EC
o
125 C t
b
o
25 C, I
EC
o
25 C t
a
o
25 C t
o
b
25 C, I
= 10A
EC
200
300
400
500
600
700
800
900
1000
200
300
400
500
600
700
800
900
1000
di /dt, RATE OF CHANGE OF CURRENT (A/µs)
EC
di /dt, RATE OF CHANGE OF CURRENT (A/µs)
EC
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
©2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
0
10
0.5
0.2
0.1
-1
10
10
0.05
0.02
0.01
t
1
P
D
-2
DUTY FACTOR, D = t / t
1
2
t
SINGLE PULSE
2
PEAK T = (P X Z
X R
) + T
θJC C
J
D
θJC
-5
10
-4
-3
10
-2
-1
0
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG20N60A4D
DIODE TA49372
90%
OFF
10%
ON2
V
GE
E
E
L = 500µH
V
CE
R
= 3Ω
G
90%
DUT
10%
d(OFF)I
+
I
CE
t
t
V
= 390V
rI
DD
t
fI
-
t
d(ON)I
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 25. SWITCHING TEST WAVEFORMS
©2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f ; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05/(t
MAX1
+ t ).
d(OFF)I d(ON)I
MAX1
Deadtime (the denominator) has been arbitrarily held to 10%
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
of the on-state time for a 50% duty factor. Other definitions
are possible. t
and t are defined in Figure 25.
d(ON)I
d(OFF)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E + E
OFF
). The
ON2
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must not
exceed P . A 50% duty factor was used (Figure 3) and the
D
5. Gate Voltage Rating - Never exceed the gate-voltage
conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
P
= (V
x I )/2.
CE
C
CE
permanent damage to the oxide layer in the gate region.
E
and E
are defined in the switching waveforms
OFF
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
ON2
shown in Figure 25. E
is the integral of the
ON2
instantaneous power loss (I
x V ) during turn-on and
CE
CE
is the integral of the instantaneous power loss
E
OFF
x V ) during turn-off. All tail losses are included in the
(I
CE
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
calculation for E
; i.e., the collector current equals zero
OFF
(I
= 0).
CE
©2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
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Revꢀ H5
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