HGTG20N60B3 [FAIRCHILD]
40A, 600V, UFS Series N-Channel IGBTs; 40A ， 600V ， UFS系列N沟道IGBT的
| 型号： | HGTG20N60B3 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 40A, 600V, UFS Series N-Channel IGBTs |
| 文件： | 总6页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGT1S20N60B3S, HGTP20N60B3,
HGTG20N60B3
Data Sheet
January 2000
File Number 3723.6
40A, 600V, UFS Series N-Channel IGBTs
Features
o
The HGT1S20N60B3S, the HGTP20N60B3 and the
• 40A, 600V at T = 25 C
C
HGTG20N60B3 are Generation III MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150 C
• Short Circuit Rated
o
o
• Low Conduction Loss
drop varies only moderately between 25 C and 150 C.
• Related Literature
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-263AB
Formerly developmental type TA49050.
Ordering Information
COLLECTOR
(FLANGE)
G
PART NUMBER
PACKAGE
BRAND
G20N60B3
E
HGTP20N60B3
TO-220AB
HGT1S20N60B3S
HGTG20N60B3
TO-263AB
TO-247
G20N60B3
JEDEC TO-220AB (ALTERNATE VERSION)
HG20N60B3
E
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A.
Symbol
COLLECTOR
(FLANGE)
C
G
JEDEC STYLE TO-247
E
C
E
G
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGT1S20N60B3S
HGTP20N60B3
HGTG20N60B3
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
600
600
V
V
CES
Collector to Gate Voltage, R
GE
= 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
40
20
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
160
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
C
30A at 600V
165
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.32
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-40 to 150
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
o
300
260
C
C
L
o
pkg
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
4
µs
µs
GE
SC
SC
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
10
GE
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
o
2. V
= 360V, T = 125 C, R = 25Ω.
C G
CE
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
600
-
CES
C
GE
CES
o
I
V
= BV
T
T
T
T
= 25 C
-
-
-
-
250
1.0
2.0
2.5
6.0
±100
-
µA
mA
V
CES
CE
C
C
C
C
o
= 150 C
o
Collector to Emitter Saturation Voltage
V
I
I
= I
, V
C110 GE
= 15V
= 25 C
-
1.8
2.1
5.0
-
CE(SAT)
C
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
= 250µA, V
CE
= V
=
3.0
-
V
GE(TH)
C
GE
I
V
= ±20V
nA
A
GES
SSOA
GE
o
T
= 150 C, V
V
V
= 480V
= 600V
100
30
-
C
GE
CE
CE
15V, R = 10Ω, L =
45µH
G
-
-
A
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= I
= I
, V
C110 CE
= 0.5 BV
CES
-
-
-
-
-
-
-
-
-
-
8.0
80
-
105
135
-
V
GEP
C
Q
,
V
GE
= 15V
= 20V
nC
nC
ns
ns
ns
ns
µJ
µJ
G(ON)
C
C110
V
= 0.5 BV
CE
CES
V
105
25
GE
o
Current Turn-On Delay Time
Current Rise Time
t
T
= 150 C
d(ON)I
C
I
= I
CE
C110
t
20
-
rI
V
V
R
= 0.8 BV
= 15V
CE
CES
Current Turn-Off Delay Time
Current Fall Time
t
220
140
475
1050
-
275
175
-
d(OFF)I
GE
= 10Ω
t
G
fI
L = 100µH
Turn-On Energy
E
ON
Turn-Off Energy (Note 3)
Thermal Resistance
NOTE:
E
-
OFF
o
R
0.76
C/W
θJC
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A). The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 were tested per
CE
JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-
Off Energy Loss. Turn-On losses include diode losses.
2
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Typical Performance Curves
100
80
60
40
20
0
100
80
60
40
20
0
PULSE DURATION = 250µs
12V
V
= 15V
V
= 10V
GE
GE
DUTY CYCLE <0.5%, V
= 10V
CE
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
o
T
= 25 C
C
o
T
= 150 C
C
V
= 9V
GE
o
T
T
= 25 C
C
V
= 8.5V
= 8.0V
GE
o
= -40 C
V
C
GE
V
= 7.5V
= 7.0V
GE
V
GE
4
6
8
10
12
0
2
4
6
8
10
V
, GATE TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
GE
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
50
40
100
80
60
40
20
0
PULSE DURATION = 250µs
o
DUTY CYCLE <0.5%, V
= 15V
T
= 25 C
GE
C
V
= 15V
GE
30
20
o
= -40 C
T
C
o
T
= 150 C
C
10
0
25
50
100
, CASE TEMPERATURE ( C)
125
150
0
1
2
3
4
5
75
o
T
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
FIGURE 3. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5000
600
480
360
240
120
0
15
12
9
FREQUENCY = 1MHz
C
IES
4000
3000
2000
1000
0
I
= 1.685mA
V
= 600V
g(REF)
CE
R
= 30Ω
L
V
= 400V
CE
6
C
C
OES
V
= 200V
CE
3
o
RES
T
= 25 C
C
0
0
5
10
15
20
25
60
, GATE CHARGE (nC)
G
100
0
20
40
80
V
, COLLECTOR TO EMITTER VOLTAGE (V)
Q
CE
FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS
3
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Typical Performance Curves (Continued)
100
500
400
o
o
T
= 150 C, R = 10Ω, L = 100µH
G
T
= 150 C, R = 10Ω, L = 100µH
G
J
J
50
40
V
= 480V, V = 15V
GE
300
200
CE
V
= 480V, V = 15V
GE
CE
30
20
10
100
0
10
20
30
40
0
10
20
30
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
1000
o
100
o
T
= 150 C, R = 10Ω, L = 100µH
G
J
T
= 150 C, R = 10Ω, L = 100µH
G
J
V
= 480V, V = 15V
GE
CE
V
= 480V, V = 15V
GE
CE
10
100
1
10
0
10
20
30
40
0
10
20
30
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
1400
o
2500
o
T
= 150 C, R = 10Ω, L = 100µH
T = 150 C, R = 10Ω, L = 100µH
J G
J
G
1200
1000
800
600
400
200
0
2000
1500
1000
500
0
V
= 480V, V = 15V
GE
CE
V
= 480V, V = 15V
GE
CE
0
10
20
30
40
0
10
20
30
40
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Typical Performance Curves (Continued)
500
120
100
80
60
40
20
0
o
o
o
T
= 150 C, T = 75 C, V
= 15V
GE
J
C
T
= 150 C, V = 15V, R = 10Ω
GE G
C
R
= 10Ω, L = 100µH
G
V
= 480V
CE
100
f
= 0.05/(t
d(OFF)I
+ t
)
MAX1
d(ON)I
f
= (P - P )/(E
ON
+ E
)
OFF
MAX2
D
C
P
= ALLOWABLE DISSIPATION
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
o
D
P
C
R
= 0.76 C/W
θJC
10
0
100
200
300
400
500
600
700
5
10
20
30
40
I
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
0
10
0.5
0.2
0.1
-1
10
0.05
0.02
0.01
-2
10
t
1
SINGLE PULSE
P
D
DUTY FACTOR, D = t / t
1
2
PEAK T = (P X Z
θJC
X R
) + T
C
t
J
D
θJC
2
-3
10
-5
10
-4
10
-3
10
-2
10
-1
1
0
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveform
90%
OFF
L = 100µH
10%
V
RHRP3060
GE
E
E
ON
V
CE
R
= 10Ω
G
90%
+
-
10%
d(OFF)I
V
= 480V
I
DD
CE
t
t
rI
t
fI
t
d(ON)I
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
5
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions
are taken:
Operating frequency information for a typical device
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows f
or f whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a typical
device and is bounded by the maximum rated junction
temperature.
f
is defined by f
MAX1
= 0.05/(t
d(OFF)I
+ t
).
d(ON)I
MAX1
Deadtime (the denominator) has been arbitrarily held to 10%
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
of the on- state time for a 50% duty factor. Other definitions
are possible. t
d(OFF)I
and t
are defined in Figure 17.
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
3. Tips of soldering irons should be grounded.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
MAX2
D
C
allowable dissipation (P ) is defined by P = (T - T )/R
The sum of device switching and conduction losses must
.
4. Devices should never be inserted into or removed from
circuits with power on.
D
D
JM θJC
C
not exceed P . A 50% duty factor was used (Figure 13)
5. Gate Voltage Rating - Never exceed the gate-voltage
D
and the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
permanent damage to the oxide layer in the gate region.
P
= (V
x I )/2.
C
CE
CE
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
E
and E
are defined in the switching waveforms
OFF
ON
shown in Figure 17. E
power loss (I
integral of the instantaneous power loss (I
CE
turn-off. All tail losses are included in the calculation for
is the integral of the instantaneous
ON
x V ) during turn-on and E
is the
CE
CE
OFF
x V ) during
CE
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
E
; i.e., the collector current equals zero (I = 0).
OFF
CE
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
6
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