FGHL40S65UQ [ONSEMI]
IGBT，650 V，40A，场截止沟槽;
| 型号： | FGHL40S65UQ |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650 V，40A，场截止沟槽 双极性晶体管 |
| 文件： | 总10页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FGHL40S65UQ
Product Preview
Field Stop Trench IGBT
40 A, 650 V
Using the novel field stop generation IGBT technology,
th
ON Semiconductor’s new series of field stop 4 generation of RC
www.onsemi.com
40 A, 650 V
IGBTs offer superior conduction and switching performance and easy
parallel operation. This device is well suited for the resonant or soft
switching application such as induction heating and microwave oven.
V
= 1.36 V (Typ.)
CE(sat)
Features
C
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
G
• Low Saturation Voltage: V
= 1.36 V (Typ.) @I = 40 A
C
• 100% of the Parts tested for I (Note 1)
CE(sat)
LM
E
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
• IGBT with Monolithic Reverse Conducting Diode
G
Typical Applications
• Induction Heating
C
E
TO−247−3L
CASE 340CX
• Microwave Oven
• Soft Switching Application
MARKING DIAGRAM
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Collector to Emitter Voltage
V
CES
V
GES
650
&Y&Z&3&K
FGHL40S65
UQ
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
20
30
V
Collector Current @T = 25°C
I
C
80
40
A
C
@T = 100°C
C
Pulsed Collector Current (Note 1)
Pulsed Collector Current (Note 2)
I
120
120
A
A
A
LM
I
CM
&Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Data Code
Diode Forward Current
@T = 25°C
I
F
40
20
C
@T = 100°C
C
Pulsed Diode Maximum Forward Current
I
120
A
FM
= 2−Digit Lot Traceability Code
FGHL40S65UQ = Specific Device Code
Maximum Power Dissipation
P
D
231
115
W
@T = 25°C
C
@T = 100°C
C
ORDERING INFORMATION
Operating Junction
T , T
−55 to
°C
°C
J
STG
/ Storage Temperature Range
+175
Device
Package
Shipping
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5 seconds
T
L
260
FGHL40S65UQ
TO−247−3L
30 Units / Rail
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
This document contains information on a product under
development. ON Semiconductor reserves the right to
change or discontinue this product without notice.
1. V = 400 V, V = 15 V, I = 120 A, R = 7 W, Inductive Load, 100% Tested.
CC
GE
C
G
2. Repetitive rating: pulse width limited by max. Junction temperature.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2019 − Rev. P0
FGHL40S65UQ/D
FGHL40S65UQ
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.65
1.69
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTIC
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
V
GE
V
GE
V
GE
= 0 V, I = 1 mA
BV
650
−
−
0.5
−
−
−
V
V/°C
mA
C
CES
Temperature Coefficient of Breakdown Voltage
= 0 V, I = 1 mA
DBV
DT
/
C
CES
J
Collector−emitter cut−off current, gate−emitter
short−circuited
= 0 V, V = 650 V
I
−
250
400
CE
CES
Gate leakage current, collector−emitter
short−circuited
= 20 V, V = 0 V
I
−
−
nA
CE
GES
ON CHARACTERISTIC
Gate−emitter threshold voltage
Collector−emitter saturation voltage
V
= V , I = 40 mA
V
GE(th)
2.5
4.7
6.5
V
V
GE
CE
C
V
GE
V
GE
= 15 V, I = 40 A
V
−
−
1.36
1.6
1.7
−
C
CE(sat)
= 15 V, I = 40 A, T = 175°C
C
J
DYNAMIC CHARACTERISTIC
Input capacitance
V
= 30 V, V = 0 V, f = 1 MHz
C
6054
36
pF
nC
−
−
−
−
−
−
−
−
−
−
−
−
CE
GE
ies
Output capacitance
C
oes
Reverse transfer capacitance
Gate charge total
C
30
res
V
CE
V
GE
= 400 V, I = 40 A,
Q
306
30
C
g
= 15 V
Gate to emitter charge
Gate to collector charge
Q
ge
Q
99
gc
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
T = 25°C
CC
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
32
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
V
d(on)
= 400 V, I = 40 A,
C
t
r
R
GE
Inductive Load
= 6 W
G
V
= 15 V
Turn−off delay time
Fall time
t
260
13
d(off)
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
1760
362
2122
30
mJ
ON
E
OFF
E
TS
T = 175°C
t
ns
J
CC
d(on)
V
= 400 V, I = 40 A,
C
t
r
28
R
GE
= 6 W
G
V
= 15 V
Turn−off delay time
Fall time
t
284
56
d(off)
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
2050
590
2640
mJ
ON
E
OFF
E
TS
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2
FGHL40S65UQ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
DIODE CHARACTERISTIC
Forward voltage
Test Conditions
Symbol
Min
Typ
Max
Unit
I = 20 A
V
F
−
−
−
−
1.24
1.24
1.6
−
−
−
V
F
F
I = 20 A, T = 175°C
J
Reverse Recovery Energy
I = 20 A, Dl /Dt = 200 A/ms
E
REC
359
mJ
F
F
Diode Reverse Recovery Time
I = 20 A, Dl /Dt = 200 A/ms
T
RR
319
430
nS
F
F
J
F
I = 20 A, Dl /Dt = 200 A/ms,
F
T = 175°C
Diode Reverse Recovery Charge
I = 20 A, Dl /Dt = 200 A/ms
Q
−
1853
3007
−
nC
F
F
RR
I = 20 A, Dl /Dt = 200 A/ms,
F
F
T = 175°C
J
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3
FGHL40S65UQ
TYPICAL CHARACTERISTICS
120
80
120
20 V
15 V
12 V
20 V
15 V
12 V
10 V
T = 25°C
J
T = 175°C
J
10 V
80
40
V
GE
= 8 V
V
= 8 V
GE
40
0
0
0
0
1
1
2
2
3
3
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
80
3
Common Emitter
Common Emitter
V
GE
= 15 V
V
GE
= 15 V
T = 25°C
J
2.5
2
T = 175°C
J
80 A
40 A
40
0
1.5
0
I
C
= 20 A
100
0
−100
−50
0
50
150
200
1
2
3
Collector−Emitter Voltage, V [V]
CE
Collector−Emitter Case Temperature, T [°C]
C
Figure 3. Typical Saturation Voltage Characteristics
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current Level
20
20
Common Emitter
T = 175°C
J
Common Emitter
T = 25°C
J
16
12
16
12
8
8
I
= 20 A
C
40 A
8
80 A
12
4
4
0
I
C
= 20 A
4
40 A
80 A
0
0
16
20
0
4
8
12
16
20
Gate−Emitter Voltage, V [V]
Gate−Emitter Voltage, V [V]
GE
GE
Figure 5. Saturation Voltage vs VGE
Figure 6. Saturation Voltage vs VGE
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4
FGHL40S65UQ
TYPICAL CHARACTERISTICS (continued)
15
V
CC
= 200 V
C
10000
1000
100
ies
Common Emitter
T = 25°C
J
12
9
300 V
400 V
C
oes
6
C
res
10
1
Common Emitter
= 0 V, f = 1 MHz
T = 25°C
J
3
0
V
GE
1
10
30
0
80
160
240
320
400
Collector−Emitter Voltage, V [V]
CE
Gate Charge, Q [nC]
G
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
10000
1000
100
100
10
1
t
d(off)
t
r
t
d(on)
t
f
Common Emitter
Common Emitter
V
V
= 400 V,
= 15 V, Ic = 40 A
CC
GE
V
CC
V
GE
= 400 V,
= 15 V, Ic = 40 A
10
1
T = 25°C
J
T = 25°C
J
T = 175°C
J
T = 175°C
J
0
0
10
20
30
40
50
10
20
30
40
50
Gate Resistance, R [ W]
G
Gate Resistance, R [W]
G
Figure 9. Turn−on Characteristics vs. Gate Resistance
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
1000
5000
E
ON
t
r
E
OFF
100
10
1
1000
t
d(on)
Common Emitter
Common Emitter
V
V
= 400 V,
=15V,I =40A
T =25°C
T =175°C
V
V
= 400 V,
= 15 V, R = 6 W
T = 25°C
T = 175°C
CC
CC
GE
C
GE
G
J
J
J
J
100
150
0
30
60
90
120
5
15
25
40
50
Gate Resistance, R [W]
Collector Current, I [A]
C
G
Figure 11. Switching Loss vs Gate Resistance
Figure 12. Turn−On Characteristics vs. Collector
Current
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5
FGHL40S65UQ
TYPICAL CHARACTERISTICS (continued)
10000
1000
1000
100
E
ON
t
d(off)
E
OFF
t
f
Common Emitter
Vcc = 400 V
Common Emitter
Vcc = 400 V
100
10
10
1
V
GE
= 15 V, R = 6 W
G
V
GE
= 15 V, R = 6 W
G
T = 25°C
J
T = 25°C
J
T = 175°C
J
T = 175°C
J
0
30
60
90
120
0
30
60
90
120
150
Collector Current, I [A]
Collector Current, I [A]
C
C
Figure 13. Turn−Off Characteristics vs.
Figure 14. Switching Loss vs. Collector Current
Collector Current
250
200
300
Square Wave
100
T ≤ 175°C, D = 0.5,
J
10 ms
T = 25°C
J
V
CE
V
GE
= 400 V,
= 15/0 V, R = 6 W
DC
100 ms
G
T = 75°C
J
1 ms
10 ms
150
100
10
T = 100°C
J
1
*Notes:
50
0
1. T = 25°C
J
2. T = 175°C
J
3. Single Pulse
0.1
1
10
100
1000
1000
10000
100000
1000000
Switching Frequency, f [Hz]
Collector−Emitter Voltage, V [V]
CE
Figure 15. Load Current vs Frequency
Figure 16. SOA Characteristics (FBSOA)
16
T = 25°C
J
100
14
12
di/dt = 200 A/ms
di/dt = 100 A/ms
T = 75°C
J
T = 175°C
J
10
8
10
6
4
T = 25°C
T = 175°C
J
J
2
0
1
1
2
3
4
5
0
10
20
30
40
0
Forward Voltage, V [V]
Forward Current, I [A]
F
F
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
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6
FGHL40S65UQ
TYPICAL CHARACTERISTICS (continued)
700
600
4000
di/dt = 200 A/ms
3500
3000
500
400
di/dt = 200 A/ms
2500
2000
1500
di/dt = 100 A/ms
300
200
100
0
di/dt = 100 A/ms
1000
500
T = 25°C
T = 25°C
J
J
T = 175°C
J
T = 175°C
J
0
0
10
20
30
40
0
10
20
30
40
Forward Current, I [A]
Forward Current, I [A]
F
F
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
1
0.5
0.2
0.1
0.1
P
DM
t1
t2
0.05
0.02
0.01
Single Pulse
Duty Factor, D = t1/t2
Paek T = Pdm × Zthjc + T
J
C
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 21. Transient Thermal Impedance of IGBT
5
1
0.5
0.2
0.1
0.05
0.02
P
DM
0.1
t1
t2
0.01
Duty Factor, D = t1/t2
Paek T = Pdm × Zthjc + T
Single Pulse
J
C
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of Diode
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7
FGHL40S65UQ
TO−247−3LD
CASE 340CX
ISSUE O
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8
FGHL40S65UQ
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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◊
FGHL40S65UQ/D
相关型号：
FGHL50T65MQDTL4
IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode
ONSEMI
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