FGHL50T65LQDTL4 [ONSEMI]
IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode;型号: | FGHL50T65LQDTL4 |
厂家: | ONSEMI |
描述: | IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode 双极性晶体管 |
文件: | 总9页 (文件大小:202K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Field Stop Trench IGBT
50 A, 650 V
VCE(Sat) = 1.15 V
50 A, 650 V
FGHL50T65LQDTL4
th
C
Field stop 4 generation Low V
IGBT technology and Full
CE(Sat)
current rated copack Diode technology.
E1: Kelvin Emitter
E2: Power Emitter
Features
G
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
E1
E2
• Low Saturation Voltage: V
= 1.15 V (Typ.) @ I = 50 A
C
CE(Sat)
• 100% of the Parts are Tested for I (Note 2)
LM
• Smooth and Optimized Switching
• Tight Parameter Distribution
• Co−packed with Soft and Fast Recovery Diode
• These Devices are Pb−Free and are RoHS Compliant
TO−247−4LD
CASE 340CJ
Typical Applications
• Solar Inverter
• UPS, ESS
MARKING DIAGRAM
• PFC, Converters
MAXIMUM RATINGS
Rating
Symbol Value
Unit
V
FGHL50T65
LQDTL4
Collector to Emitter Voltage
V
650
CES
GES
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
V
20
30
V
Collector Current (Note 1)
@ T = 25°C
I
C
80
50
A
C
@ T = 100°C
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
I
200
200
A
A
A
LM
I
CM
Diode Forward Current (Note 1) @ T
@ T
25°C
100°C
I
F
60
50
C =
&Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= 3−Digit Date Code
C =
Pulsed Diode Maximum Forward Current
I
200
A
FM
= 2−Digit Lot Traceability Code
Maximum Power Dissipation @ T = 25°C
P
341
170
W
C
D
FGHL50T65LQDTL4 = Specific Device Code
@ T = 100°C
C
Operating Junction and Storage Temperature
Range
T ,
−55 to
+175
°C
°C
J
T
STG
ORDERING INFORMATION
Maximum Lead Temp. for Soldering
Purposes (1/8″ from case for 5 s)
T
L
260
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
FGHL50T65LQDTL4 TO−247−4LD 450 Units/Tube
2. V = 400 V, V = 15 V, I = 200 A, Inductive Load, 100% tested
CC
GE
C
3. Repetitive rating: pulse width limited by max. junction temperature
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
August, 2021 − Rev. 0
FGHL50T65LQDTL4/D
FGHL50T65LQDTL4
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.44
0.74
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter breakdown voltage
V
V
= 0 V, I = 1 mA
BV
CES
650
−
−
−
−
V
GE
C
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1 mA
0.6
V/°C
GE
C
DBV
CES
DT
J
Collector to Emitter cut−off current
Gate leakage current
V
= 0 V, V = 650 V
I
−
−
−
−
250
400
mA
GE
CE
CES
GES
V
= 20 V, V = 0 V
I
nA
GE
CE
ON CHARACTERISTICS
Gate to Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
V
= V , I = 50 mA
V
GE(th)
3.0
4.5
6.0
V
V
GE
CE
C
V
= 15 V, I = 50 A, T = 25°C
= 15 V, I = 50 A, T = 175°C
V
CE(sat)
−
−
1.15
1.22
1.35
−
GE
C
J
V
GE
C J
DYNAMIC CHARACTERISTICS
Input capacitance
V
= 30 V, V = 0 V, f = 1 MHz
C
−
−
−
−
−
−
10615
120
50
−
−
−
−
−
−
pF
nC
CE
GE
ies
Output capacitance
C
oes
Reverse transfer capacitance
Gate charge total
C
res
V
CE
= 400 V, I = 50 A, V = 15 V
Q
509
52
C
GE
g
Gate−to−emitter charge
Gate−to−collector charge
Q
Q
ge
gc
167
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
T = 25°C,
CC
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
28
12
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V,
= 25 A,
= 4.7 W,
t
r
I
C
R
V
G
GE
Turn−off delay time
Fall time
t
424
140
0.41
0.86
1.26
30
d(off)
= 15 V
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
mJ
ns
E
ts
T = 25°C,
t
t
J
CC
d(on)
V
= 400 V,
= 50 A,
= 4.7 W,
t
r
24
I
R
C
G
Turn−off delay time
Fall time
412
116
0.72
1.54
2.26
d(off)
V
GE
= 15 V
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
on
E
off
mJ
E
ts
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2
FGHL50T65LQDTL4
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
T = 175°C,
CC
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
26
16
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V,
= 25 A,
= 4.7 W,
t
r
I
C
R
V
G
GE
Turn−off delay time
Fall time
t
484
220
0.81
1.19
2
d(off)
= 15 V
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
mJ
ns
E
ts
T = 175°C,
t
t
28
J
CC
d(on)
V
= 400 V,
= 50 A,
= 4.7 W,
t
r
28
I
C
R
G
Turn−off delay time
Fall time
476
176
1.48
2.24
3.72
d(off)
V
GE
= 15 V
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
DIODE CHARACTERISTICS
E
on
E
off
mJ
E
ts
Diode Forward Voltage
I = 50 A, T = 25°C
V
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1.65
1.55
77
2.1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
F
J
FM
rec
I = 50 A, T = 175°C
F
J
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T = 25°C,
E
mJ
ns
nC
A
J
R
V
= 400 V,
T
57
rr
I = 25 A,
F
di /dt = 1000 A/ms
F
Q
532
19
rr
I
rr
T = 25°C,
E
127
75
mJ
ns
nC
A
J
R
rec
V
= 400 V,
T
rr
I = 50 A,
F
di /dt = 1000 A/ms
F
Q
783
21
rr
I
rr
T = 175°C,
E
356
101
1725
35
mJ
ns
nC
A
J
rec
V
R
= 400 V,
T
rr
I = 25 A,
F
di /dt = 1000 A/ms
F
Q
rr
I
rr
T = 175°C,
E
549
132
2465
38
mJ
ns
nC
A
J
rec
V
R
= 400 V,
T
rr
I = 50 A,
F
di /dt = 1000 A/ms
F
Q
rr
I
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGHL50T65LQDTL4
TYPICAL CHARACTERISTICS
200
160
120
80
200
20V
20V
15V
12V
10V
15V
12V
10V
160
120
80
40
0
V
GE
= 8 V
V
= 8 V
GE
40
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
3
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
(TJ = 255C)
(TJ = 1755C)
100
80
60
40
20
0
200
160
120
80
Common Emitter
Common Emitter
V
CE
= 20 V
V
GE
= 15 V
T = 25°C
J
T = 25°C
J
T = 175°C
J
T = 175°C
J
40
0
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
V
CE
, Collector−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
Figure 4. Typical Transfer Characteristics
Figure 3. Typical Saturation Voltage Characteristics
2.0
Common Emitter
V
GE
= 15 V
10000
1000
100
C
ies
1.5
1.0
0.5
100 A
50 A
C
oes
I
C
= 25 A
C
res
Common Emitter
= 0 V, f = 1 MHz
V
GE
10
−100
−50
0
50
100
150
200
1
10
, Collector−Emitter Voltage (V)
30
T , Junction Temperature (°C)
V
CE
J
Figure 6. Capacitance Characteristics
Figure 5. Saturation Voltage vs. Junction Temperature
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FGHL50T65LQDTL4
TYPICAL CHARACTERISTICS (continued)
15
12
9
Common Emitter
= 50 A
I
C
100
V
CC
= 200 V
300 V
10 ms
DC
100 ms
400 V
1ms
10ms
10
1
6
*Notes:
3
1. T = 25°C
J
2. T = 175°C
J
3. Single Pulse
0
0.1
0
100
200
300
400
500
600
1
10
100
1000
Q , Gate Charge (nC)
g
V
CE
, Collector−Emitter Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics
10000
1000
100
Common Emitter
= 400 V, V = 15 V
V
CC
GE
I
C
= 50 A
t
d(off)
T = 25°C
J
t
T = 175°C
d(on)
J
100
Common Emitter
= 400 V, V = 15 V, I = 50 A
t
f
V
CC
t
r
GE
C
T = 25°C
J
T = 175°C
J
10
10
0
10
20
30
40
50
0
10
20
30
40
50
R , Gate Resistance (W)
g
R , Gate Resistance (W)
g
Figure 9. Turn−On Characteristics vs. Gate
Resistance
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
1000
100
10
t
f
100
10
1
t
r
t
t
d(on)
d(off)
Common Emitter
= 400 V, V = 15 V
= 4.7 W
T = 25°C
T = 175°C
Common Emitter
= 400 V, V = 15 V
V
R
J
J
V
CC
CC
GE
GE
R
= 4.7 W
G
G
T = 25°C
J
T = 175°C
J
0
40
80
120
160
0
40
80
120
160
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 12. Turn−Off Characteristics vs. Collector
Current
Figure 11. Turn−On Characteristics vs. Collector
Current
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FGHL50T65LQDTL4
TYPICAL CHARACTERISTICS (continued)
10
10
E
off
E
off
1
E
on
E
on
1
Common Emitter
= 400 V, V = 15 V
Common Emitter
V
CC
GE
V
CC
= 400 V, V = 15 V
GE
I
C
= 50 A
R
= 4.7 W
G
T = 25°C
J
T = 25°C
J
T = 175°C
J
T = 175°C
J
0.1
0.1
0
10
20
30
40
50
0
40
80
120
160
R , Gate Resistance (W)
g
I , Collector Current (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector Current
40
35
30
25
20
15
10
5
200
160
120
80
V
= 400 V
R
Common Emitter
I = 50 A
F
40
T = 25°C
T = 25°C
J
J
T = 175°C
T = 175°C
J
J
0
400
0
0
1
2
3
4
5
600
800
1000
1200
V , Forward Voltage (V)
F
di /dt, Diode Current Slop (A/ms)
F
Figure 15. Forward Characteristics
Figure 16. Reverse Recovery Current
3000
2500
2000
1500
1000
500
250
V
= 400 V
R
I = 50 A
F
200
150
100
50
T = 25°C
J
T = 175°C
J
V
= 400 V
R
I = 50 A
F
T = 25°C
J
T = 175°C
J
0
400
0
600
800
1000
1200
400
600
800
1000
1200
di /dt, Diode Current Slop (A/ms)
F
di /dt, Diode Current Slop (A/ms)
F
Figure 18. Stored Charge
Figure 17. Reverse Recovery Time
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FGHL50T65LQDTL4
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1
P
DM
0.5
t
1
0.1
t
2
0.2
0.1
Duty Factor, D = t /t
1
q
2
Peak T = P x Z + T
j
dm
jc
c
R
R2
1
0.05
0.01
0.02
0.01
C = t / R
2
C = t / R
1
2
2
1
1
i:
1
2
3
4
5
6
ri[K/W]: 0.0103
0.0750
0.0680
0.0974
0.0784
0.0175
t[s]:
7.709E−6 1.102E−4 2.995E−4 2.029E−3 5.142E−3 2.041E−2
Single Pulse
−6
0.001
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 19. Transient Thermal Impedance of IGBT
1
0.1
0.5
P
DM
t
1
0.2
0.1
t
2
Duty Factor, D = t /t
1
2
Peak T = P x Z + T
q
j
dm
jc
c
0.05
R
R2
1
0.02
0.01
0.01
Single Pulse
C = t / R
C = t / R
2
2
2
1
1
1
i:
1
2
3
4
5
6
ri[K/W]: 0.0177
0.0454
0.1861
0.1547
0.1876
0.0509
t[s]:
2.352E−6 1.892E−5 4.570E−4 1.723E−3 1.021E−2 3.411E−2
0.001
−5
−4
−6
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 20. Transient Thermal Impedance of Diode
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FGHL50T65LQDTL4
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
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8
FGHL50T65LQDTL4
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