FGHL75T65MQDTL4 [ONSEMI]
IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode;
| 型号： | FGHL75T65MQDTL4 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode 双极性晶体管 |
| 文件： | 总9页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Field Stop Trench IGBT
650 V, 75 A
75 A, 650 V
CESat = 1.45 V
V
FGHL75T65MQDTL4
C
th
Field stop 4 generation mid speed IGBT technology Full current
rated copack Diode technology.
E1: Kelvin Emitter
E2: Power Emitter
Features
G
• Maximum Junction Temperature: T = 175°C
J
E1
E2
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
= 1.45 V (Typ.) @ I = 75 A
C
• 100% of the Parts are Tested for I (Note 2)
CE(Sat)
LM
• Smooth and Optimized Switching
• Tight Parameter Distribution
• RoHS Compliant
TO−247−4LD
Typical Applications
• Solar Inverter
• UPS, ESS
CASE 340CJ
MARKING DIAGRAM
• PFC, Converters
MAXIMUM RATINGS
Rating
Symbol Value
Unit
V
FGHL75T65
MQDTL4
Collector to Emitter Voltage
V
CES
V
GES
650
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
20
30
V
Collector Current (Note 1)
@ T = 25°C
I
C
80
75
A
C
@ T = 100°C
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
I
300
300
A
A
A
LM
I
CM
&Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Date Code
Diode Forward Current (Note 1) @ T
@ T
25°C
100°C
I
F
80
75
C =
C =
= 2−Digit Lot Traceability Code
Pulsed Diode Maximum Forward Current
I
300
A
FM
FGHL75T65MQDTL4 = Specific Device Code
Maximum Power Dissipation @ T = 25°C
P
D
375
188
W
C
@ T = 100°C
C
Operating Junction and Storage Temperature
Range
T ,
STG
−55 to
°C
°C
J
ORDERING INFORMATION
T
+175
Device
Package
Shipping
Maximum Lead Temp. for Soldering
Purposes (1/8″ from Case for 5 s)
T
L
260
FGHL75T65MQDTL4 TO−247−4LD 30 Units / Tube
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. V = 400 V, V = 15 V, I = 300 A, Inductive Load, 100% tested
CC
GE
C
3. Repetitive rating: Pulse width limited by max. junction temperature
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
FGHL75T65MQDTL4/D
August, 2021 − Rev. 1
FGHL75T65MQDTL4
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.40
0.60
40
Unit
°C/W
°C/W
°C/W
Thermal Resistance Junction−to−case, for IGBT
Thermal Resistance Junction−to−case, for Diode
Thermal Resistance Junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−emitter Breakdown Voltage,
Gate−emitter Short−circuited
V
C
= 0 V,
BV
650
−
−
−
V
GE
CES
I
= 1 mA
Temperature Coefficient of Breakdown
Voltage
V
C
= 0 V,
= 1 mA
−
0.6
V/°C
DBVCES
DTJ
GE
I
Collector−emitter Cut−off Current,
Gate−emitter Short−circuited
V
CE
= 0 V,
I
−
−
−
−
250
400
mA
GE
CES
V
= 650 V
Gate Leakage Current, Collector−emitter
Short−circuited
V
= 20 V,
= 0 V
I
nA
GE
GES
V
CE
ON CHARACTERISTICS
Gate−emitter Threshold Voltage
Collector−emitter Saturation Voltage
V
= V , I = 75 mA
V
GE(th)
3.0
−
4.5
6.0
1.8
−
V
V
V
GE
CE
C
V
= 15 V,
= 75 A,
T = 25°C
J
V
CE(sat)
1.45
1.65
GE
C
I
T = 175°C
J
−
DYNAMIC CHARACTERISTICS
Input Capacitance
V
= 30 V,
GE
C
−
−
−
−
−
−
4954
163
14
−
−
−
−
−
−
pF
nC
CE
ies
V
= 0 V,
Output Capacitance
C
oes
f = 1 MHz
Reverse Transfer Capacitance
Gate Charge Total
C
res
V
= 400 V,
= 75 A,
Q
149
27
CE
g
I
C
Gate−to−emitter Charge
Gate−to−collector Charge
Q
Q
ge
gc
V
= 15 V
GE
34
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T
CC
= 25°C,
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
30
16
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
d(on)
V
= 400 V,
t
r
I
= 37.5 A,
C
R
= 10 W,
G
Turn−off Delay Time
Fall Time
t
190
35
d(off)
V
= 15 V,
GE
Inductive Load
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
0.6
0.5
1.1
32
mJ
ns
E
ts
T
C
= 25°C,
= 400 V,
= 75 A,
= 10 W,
t
t
d(on)
V
CC
C
t
r
29
I
R
V
G
Turn−off Delay Time
Fall Time
181
32
d(off)
= 15 V,
GE
Inductive Load
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
E
on
E
off
1.2
1.1
2.3
mJ
E
ts
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2
FGHL75T65MQDTL4
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
Test Conditions
Symbol
Min
Typ
Max
Unit
T
CC
= 150°C,
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
27
19
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
d(on)
V
= 400 V,
t
r
I
= 37.5 A,
C
R
= 10 W,
GE
G
Turn−off Delay Time
Fall Time
206
44
d(off)
V
= 15 V,
Inductive Load
t
f
Turn−on Switching Loss
Turn−off Switching Loss
TotaL Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
1.9
1.8
1.8
30
mJ
ns
E
ts
T
= 150°C,
t
t
C
d(on)
V
= 400 V,
= 75 A,
= 10 W,
CC
t
r
32
I
C
R
G
Turn−off Delay Time
Fall Time
198
40
d(off)
V
= 15 V,
GE
Inductive Load
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
E
on
E
off
2.0
1.4
3.4
mJ
V
E
ts
Diode Forward Voltage
I = 75 A
F
T = 25°C
J
V
FM
−
−
1.65
1.55
2.1
T = 175°C
J
−
DIODE SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Reverse Recovery Energy
T
= 25°C, V = 400 V, I = 37.5 A,
E
−
−
−
−
−
−
−
−
−
−
−
−
105
58
−
−
−
−
−
−
−
−
−
−
−
−
mJ
ns
nC
mJ
ns
nC
mJ
ns
nC
mJ
ns
nC
C
CE
F
REC
dI /dt = 1000 A/ms
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
T
rr
Q
591
235
107
1113
747
151
2780
865
171
3286
rr
T
= 25°C, V = 400 V, I = 75 A,
E
REC
C
CE
F
dI /dt = 1000 A/ms
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
T
rr
Q
rr
T
C
= 150°C, V = 400 V, I = 37.5 A,
E
REC
CE
F
dI /dt = 1000 A/ms
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
T
rr
Q
rr
T
= 150°C, V = 400 V, I = 75 A,
E
REC
C
CE
F
dI /dt = 1000 A/ms
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
T
rr
Q
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGHL75T65MQDTL4
TYPICAL CHARACTERISTICS
300
240
180
120
60
300
20 V
15 V
12 V
10 V
20 V
15 V
12 V
10 V
T
C
= 25°C
T
C
= 150°C
240
180
120
60
V
GE
= 8 V
V
GE
= 8 V
0
0
0
1
2
3
4
5
0
0
1
1
2
3
4
5
V
, Collector−Emitter Voltage (V)
V
, Collector−Emitter Voltage (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
300
240
180
120
60
150
100
50
Common Emitter
Common Emitter
= 15 V
= 25°C
C
V
T
= 15 V
= 25°C
= 150°C
V
T
GE
CE
C
T
C
T
C
= 150°C
0
0
0
1
2
3
4
5
2
4
6
8
10
V
, Collector−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
CE
Figure 3. Typical Saturation Voltage
Figure 4. Typical Transfer Characteristics
2.5
2.0
1.5
1.0
Common Emitter
V
GE
= 15 V
10000
1000
100
10
Cies
Coes
150 A
75 A
Common Emitter
Cres
V
T
= 0 V, f = 1 MHz
= 25°C
GE
I
= 40 A
C
C
1
10
, Collector−Emitter Voltage (V)
CE
−100
−50
0
50
100
150
200
30
T , Collector−Emitter Case Temperature (°C)
V
C
Figure 5. Saturation Voltage vs. Case Temperature
Figure 6. Capacitance Characteristics
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FGHL75T65MQDTL4
TYPICAL CHARACTERISTICS (continued)
15
12
9
1000
Common Emitter
V
CC
= 200 V
T
C
= 25°C
10 ms
DC
100
10
1
300 V
400 V
100 ms
1 ms
10 ms
6
*Notes:
1. T = 25°C
2. T = 175°C
C
3
J
3. Single Pulse
0,1
0
0
30
60
90
120
150
1
10
, Collector−Emitter Voltage (V)
CE
100
1000
Q , Gate Charge (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics
1000
100
10
200
100
t
d(off)
Common Emitter
= 400 V, V = 15 V
t
d(on)
V
CC
= 75 A
GE
I
C
T
C
T
C
= 25°C
= 150°C
t
r
Common Emitter
t
r
V
= 400 V, V = 15 V
CC
GE
I
T
T
= 75 A
C
= 25°C
C
C
= 150°C
10
0
10
20
30
40
50
0
10
20
30
40
50
R , Gate Resistance (W)
g
R , Gate Resistance (W)
g
Figure 9. Turn−On Characteristics vs. Gate Resistance
Figure 10. Turn−Off Characteristics vs. Gate Resistance
500
200
Common Emitter
V
= 400 V, V = 15 V
CC
GE
R
T
T
= 10 W
= 25°C
= 150°C
G
C
C
100
t
d(off)
t
r
100
t
d(on)
Common Emitter
V
= 400 V, V = 15 V
CC
GE
t
r
R
T
T
= 10 W
= 25°C
= 150°C
G
C
C
10
10
0
50
100
150
200
0
50
100
150
200
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 11. Turn−On Characteristics vs. Collector
Figure 12. Turn−Off Characteristics vs. Collector
Current
Current
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FGHL75T65MQDTL4
TYPICAL CHARACTERISTICS (continued)
10
10
Common Emitter
= 400 V, V = 15 V
V
CC
GE
I
C
= 75 A
T
C
T
C
= 25°C
= 150°C
E
on
E
on
1
E
off
Common Emitter
V
CC
= 400 V, V = 15 V
GE
R
T
T
= 10 W
= 25°C
= 150°C
G
C
C
E
off
1
0,1
0
10
20
30
40
50
0
50
100
150
200
R , Gate Resistance (W)
g
I , Collector Current (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector Current
300
60
Common Emitter
T
C
T
C
= 25°C
= 150°C
T
C
T
C
= 25°C
= 150°C
250
200
150
100
50
50
40
30
20
10
0
0
0
0.5
1
1.5
2
2.5
3
3.5
400
600
800
1000
1200
1400
1600
V , Forward Voltage (V)
F
di /dt, Diode Current Slop (A/ms)
F
Figure 15. Forward Characteristics
Figure 16. Reverse Recovery Current
300
250
200
150
100
50
5
4,5
4
T
C
T
C
= 25°C
= 150°C
T
C
T
C
= 25°C
= 150°C
3,5
3
2,5
2
1,5
1
0,5
0
400
0
400
600
800
1000
1200
1400
1600
600
800
1000
1200
1400
1600
di /dt, Diode Current Slop (A/ms)
F
di /dt, Diode Current Slop (A/ms)
F
Figure 17. Reverse Recovery Time
Figure 18. Stored Charge
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FGHL75T65MQDTL4
TYPICAL CHARACTERISTICS (continued)
1
0.1
0.5
PDM
0.2
0.1
t1
t2
0.05
0.02
Duty Factor, D = t / t
1
2
0.01
Peak T = Pdm x Zthjc + T
j
c
R
1
R
2
0.01
0.001
0.0001
C = t / R
C = t / R
1
1
1
2
2
2
Single Pulse
i:
ri [K/W]: 0.00690 0.04226 0.11080
t [s]: 1.741E−5 8.297E−5 3.073E−3 1.497E−2
1
2
3
4
0.06875
−6
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 19. Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
PDM
0.1
t1
0.05
t2
0.02
Duty Factor, D = t / t
1
2
0.01
Peak T = Pdm x Zthjc + T
j
c
0.01
R
1
R
2
0.001
0.0001
Single Pulse
C = t / R
C = t / R
1
1
1
2
2
2
i:
1
2
3
4
ri [K/W]: 0.00796 0.06415 0.14360 0.13740
t [s]: 1.002E−5 1.761E−4 3.348E−3 2.927E−2
−6
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 20. Transient Thermal Impedance of Diode
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FGHL75T65MQDTL4
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
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8
FGHL75T65MQDTL4
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