FGHL50T65SQ [ONSEMI]
IGBT 650V FS4 高速版，适用于采用 TO-247 封装的 PFC 应用;
| 型号： | FGHL50T65SQ |
| 厂家： | 
ONSEMI |
| 描述： | IGBT 650V FS4 高速版，适用于采用 TO-247 封装的 PFC 应用 双极性晶体管 功率因数校正 |
| 文件： | 总7页 (文件大小：379K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FGHL50T65SQ
IGBT for PFC Applications
650 V, 50 A, TO-247-3L
Features
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
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• Low Saturation Voltage: V
=1.6 V (Typ.) @ I = 50 A
C
CE(sat)
• 100% of the Parts Tested for ILM (Note 1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
BV
V
TYP
I MAX
C
CES
CE(sat)
650 V
1.6 V
200 A
C
Typical Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
E
Parameter
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage
Transient Gate−to−Emitter Voltage
Collector Current
Symbol
Value
650
20
Unit
V
V
CES
V
GES
V
GES
V
30
V
T
= 25°C
= 100°C
= 25°C
= 25°C
= 100°C
I
C
100
50
A
C
T
C
Pulsed Collector Current (Note 2)
Maximum Power Dissipation
T
T
I
200
268
134
A
TO−247 LONG LEADS
C
CM
CASE 340CX
P
D
W
C
T
C
MARKING DIAGRAM
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
°C
J
stg
+175
Maximum Lead Temperature for Soldering
Purposes (1/8″ from case for 5 s)
T
L
260
$Y&Z&3&K
FGHL50T65
SQ
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. V = 400 V, V = 15 V, I = 200 A, Inductive Load
CC
GE
C
2. Repetitive rating: Pulse width limited by max. Junction temperature
3. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Traceability Code
= Specific Device Code
FGHL50T65SQ
ORDERING INFORMATION
Device
Package
Shipping
FGHL50T65SQ
TO−247−3L
30 Units / Rail
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
December, 2018 − Rev. 0
FGHL50T65SQ/D
FGHL50T65SQ
Table 1. THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
0.56
40
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 4)
R
θJC
R
θJA
°C/W
4. Repetitive rating: Pulse width limited by max. Junction temperature
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
C
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 1 mA
650
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
DV
/ DT
= 0 V, I = 1 mA
0.6
V/°C
CES
J
GE
C
Collector Cut−Off Current
G−E Leakage Current
I
V
= V
= V
, V = 0 V
250
400
mA
CES
CE
CES
GE
I
V
GE
, V = 0 V
nA
GES
GES
CE
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
= V , I = 50 mA
2.6
4.5
1.6
6.4
2.1
V
V
V
GE(th)
GE
CE
C
Collector to Emitter Saturation Voltage
V
I = 50 A, V = 15 V T = 25°C
C GE C
CE(sat)
I
C
= 50 A, V = 15 V T = 175°C
1.92
GE
C
DYNAMIC CHARACTERISTIC
Input Capacitance
Cies
Coes
Cres
V
CE
= 30 V, V = 0 V, f = 1 MHz
3209
42
pF
GE
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTIC
Turn−On Delay Time
Rise Time
12
t
t
V
G
= 400 V, I = 25 A,
19
13
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
d(on)
CC
C
R
= 4.7 W, V = 15 V,
GE
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
93
d(off)
FWD: FGH50T65SQD
t
f
6.4
410
88
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
E
ts
498
18
t
t
V
G
= 400 V, I = 25 A,
d(on)
CC C
R
= 4.7 W, V = 15 V,
GE
t
r
15
Inductive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
102
8
d(off)
FWD: FGH50T65SQD
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
E
on
E
off
641
203
844
99
E
ts
Q
V
= 400 V, I = 50 A,
g
CE C
V
= 15 V
GE
Gate−to−Emitter Charge
Gate−to−Collector Charge
Q
17
ge
gc
Q
23
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FGHL50T65SQ
TYPICAL CHARACTERISTICS
200
150
200
20V
15V
12V
10V
20V
TC = 25oC
TC = 175oC
15V
12V
10V
VGE = 8V
150
100
50
VGE = 8V
100
50
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Voltage, VCE [V]
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
3
200
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
150
100
50
100A
2
1
50A
IC = 25A
0
−100
−50
0
50
100
150
200
0
1
2
3
4
5
Collector−Emitter Case Temperature, TC [oC]
Collector−Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
16
12
8
20
16
12
8
Common Emitter
TC = 175oC
Common Emitter
TC = 25oC
IC = 25A
IC = 25A
50A
50A
100A
100A
4
4
0
0
4
8
12
16
20
4
8
12
16
20
Gate−Emitter Voltage, VGE [V]
Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
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3
FGHL50T65SQ
TYPICAL CHARACTERISTICS
10000
1000
100
10
15
Common Emitter
TC = 25 oC
Cies
12
9
400V
VCC = 200V
300V
Coes
Cres
6
3
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
1
0
1
10
Collector−Emitter Voltage, VCE [V]
0
20
40
60
80
100
100
Gate Charge, Qg [nC]
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
100
10
100
tr
td(off)
td(on)
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
TC = 25oC
TC = 175oC
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
TC = 25oC
TC = 175oC
10
5
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG [ W]
Gate Resistance, RG [ W]
Figure 9. Turn−on Characteristics vs. Gate
Figure 10. Turn−off Characteristics vs. Gate
Resistance
Resistance
200
5000
Common Emitter
VGE = 15V, RG = 4.7 W
TC = 25oC
TC = 175oC
100
Eon
tr
1000
Eoff
Common Emitter
VCC = 400V, VGE = 15V
td(on)
IC = 50A
TC = 25oC
TC = 175oC
10
100
0
25
50
75
100
125
150
0
10
20
30
40
50
Gate Resistance, RG [ W]
Collector Current, IC [A]
Figure 11. Switching Loss vs. Gate Resistance
Figure 12. Turn−on Characteristics vs.
Collector Current
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4
FGHL50T65SQ
TYPICAL CHARACTERISTICS
10000
500
100
Eon
tf
td(off)
Eoff
1000
10
1
Common Emitter
VGE = 15V, RG = 4.7 W
TC = 25oC
TC = 175oC
Common Emitter
VGE = 15V, RG = 4.7 W
TC = 25oC
TC = 175oC
100
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Collector Current, I C [A]
Collector Current, IC [A]
Figure 13. Turn−off Characteristics vs.
Figure 14. Switching Loss vs. Collector
Current
Collector Current
300
250
200
150
100
50
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 4.7W
100 DC
10ms
100ms
TC = 25oC
TC = 75oC
1ms
10 ms
10
1
TC = 100oC
*Notes:
oC
1. TC = 25
= 175oC
3. Single Pulse
2. TJ
0.1
0
1k
1
10
100
1000
10k
100k
1M
Collector−Emitter Voltage, VCE [V]
Switching Frequency, f[Hz]
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
0.6
0.5
0.2
0.1
0.1
PDM
0.05
0.02
t1
t2
Duty Factor, D = t1/t2
0.01
single pulse
Peak Tj = Pdm x Zthjc + TC
0.01
10−5
10−4
10−3
10−2
10−1
100
Rectangular Pulse Duration [sec]
Figure 17. Transient Thermal Impedance of IGBT
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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